Mitsubishi QM150DY-3H Datasheet
QM150DY-3H
MITSUBISHI TRANSISTOR MODULES
QM150DY-3H
HIGH POWER SWITCHING USE
INSULATED TYPE
• IC Collector current ........................ 150A
• V
CEX Collector-emitter voltage ......... 1400V
• h
FE DC current gain.............................100
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
113
2E1
E
2
C
12
93
17 8 17 8 17
φ6.5
B2X
B
2
E
2
90
1
1
15 6
6
5.5
Tab #110,
t=0.5
C
2E1
B1X
E
2
1
E
B
B
2
E
2
C
1
E
1
B
1
70
5.5
M6
14
21.5 25 25
6
B2X
615
1
B
C
X
31
LABEL
37.5
7
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Parameter
Conditions
C=1A, VEB=3V
I
EB=3V
V
Emitter open
Collector open
DC
DC (forward diode current)
C=25°C
T
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M6
Mounting screw M6
Typical value
MITSUBISHI TRANSISTOR MODULES
QM150DY-3H
HIGH POWER SWITCHING USE
INSULATED TYPE
Ratings
1400
1400
1400
7
150
150
1500
16
1500
–40~+150
–40~+125
3000
1.96~2.94
20~30
1.96~2.94
20~30
650
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
CEX
I
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
V
CE=1400V, VEB=3V
CB=1400V, Emitter open
V
EB=7V
V
I
C=150A, IB=3A
–I
C=150A (diode forward voltage)
C=150A, VCE=5V
I
CC=800V, IC=150A, IB1=–IB2=3A
V
Transistor part (per 1/2 module)
Diode part (per 1/2 module)
Conductive grease applied (per 1/2 module)
Test conditions
Min.
—
—
—
—
—
—
100
—
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
15
15
400
3.0
3.5
1.8
—
3.0
20
3.0
0.08
0.35
0.025
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Feb.1999
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