MITSUBISHI PS21961-4S Technical data
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21961-4S
TRANSFER-MOLD TYPE
INSULATED TYPE
PS21961-4S
INTEGRATED POWER FUNCTIONS
600V/3A low-loss RC-IGBT inverter bridge with N-side
three phase output DC-to-AC power conversion.
Open emitter type.
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
• For upper-leg IGBTS :Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection.
• For lower-leg IGBT
S : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC).
• Fault signaling : Corresponding to an SC fault (Lower-leg IGBT) or a UV fault (Lower-side supply).
• Input interface : 3V, 5V line (High Active).
•UL Approved : Yellow Card No. E80276
APPLICATION
AC100V~200V inverter drive for small power motor control.
Fig. 1 PACKAGE OUTLINES
QR
Code
20×1.778(=35.56 )
Type name
Lot No.
14×2.54(=35.56)
0.28
±0.2
1.778
17 1
2-R1.6
12
18
0.28
±0.2
2.54
0.5
HEAT SINK SIDE
38
35
3 MIN
±0.5
±0.3
0.5 0.5
A
16-0.5
(1)
±0.5
±0.5
24
33.7
25
8-0.6
0.5
4-C1.2
±0.5
9.5
±0.5
5.5
±0.5
29.2
±0.5
14.4
±0.5
18.9
(2.656)
(1.2)
B
0.4
±0.5
14.4
0.4
(1.2)
3.5
±0.05
1.5
(3.5)
0.8
2.5 MIN
DETAIL A DETAIL B
(3.3)
HEAT SINK SIDE
(0°~5°)
(2.756)
Dimensions in mm
TERMINAL CODE
1. (VNC)
2. VUFB
3. VVFB
4. VWFB
5. UP
6. VP
7. WP
8. VP1
9. VNC *
10. UN
11. VN
12. WN
13. VN1
14. FO
15. CIN
16. VNC *
17. NC
18. NW
19. NV
20. NU
21. W
22. V
23. U
24. P
25. NC
1.5min
*) Two VNC terminals (9 & 16 pin) are connected inside DIP-IPM, please connect either one to the 15V power supply GND outside and
leave another one open.
Mar. 2007
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21961-4S
TRANSFER-MOLD TYPE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
ConditionSymbol Parameter Ratings Unit
CC
V
VCC(surge)
VCES
±IC
±ICP
PC
Tj
Supply voltage
Supply voltage (surge)
Collector-emitter voltage
Each IGBT collector current
Each IGBT collector current (peak)
Collector dissipation
Junction temperature
Applied between P-NU, NV, NW
Applied between P-NU, NV, NW
T
C = 25°C
C = 25°C, less than 1ms
T
C = 25°C, per 1 chip
T
(Note 1)
450
500
600
3
6
21.3
–20~+125
Note 1 : The maximum junction temperature rating of the power chips integrated within the DIP-IPM is 150°C (@ TC ≤ 100°C). However, to
ensure safe operation of the DIP-IPM, the average junction temperature should be limited to Tj(ave) ≤ 125°C (@ TC ≤ 100°C).
CONTROL (PROTECTION) PART
ConditionSymbol Parameter Ratings Unit
VD
VDB
VIN
VFO
IFO
VSC
Control supply voltage
Control supply voltage
Input voltage
Fault output supply voltage
Fault output current
Current sensing input voltage
Applied between V
Applied between VUFB-U, VVFB-V, VWFB-W
Applied between U
Applied between FO-VNC
Sink current at FO terminal
Applied between CIN-V
P1-VNC, VN1-VNC
P, VP, WP, UN, VN,
WN-VNC
NC
–0.5~V
–0.5~V
–0.5~V
20
20
D+0.5
D+0.5
1
D+0.5
V
V
V
A
A
W
°C
V
V
V
V
mA
V
TOTAL SYSTEM
Symbol Ratings Unit
V
CC(PROT)
TC
Tstg
Viso
Note 2: T
Self protection supply voltage limit
(short circuit protection capability)
Module case operation temperature
Storage temperature
Isolation voltage
C measurement point
IGBT chip position
FWD chip position
Parameter
Control terminals
11.6mm
Power terminals
D = 13.5~16.5V, Inverter part
V
Tj = 125°C, non-repetitive, less than 2µs
60Hz, Sinusoidal, 1 minute,
Between pins and heat-sink plate
3mm
Condition
C
point
T
Heat sink side
(Note 2)
DIP-IPM
400
–20~+100
–40~+125
1500
V
°C
°C
rms
V
Mar. 2007
2
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21961-4S
TRANSFER-MOLD TYPE
INSULATED TYPE
THERMAL RESISTANCE
Parameter
R
th(j-c)Q
Note 3 : Grease with good thermal conductivity should be applied evenly with about +100µm~+200µm on the contacting surface of DIP-IPM
Junction to case thermal
resistance (Note 3)
and heat-sink.
The contacting thermal resistance between DIP-IPM case and heat sink (R
conductivity of the applied grease. For reference, R
the thermal conductivity is 1.0W/m·k.
Inverter RC-IGBT part (per 1/6 module)
ConditionSymbol
th(c-f) (per 1/6 module) is about 0.3°C/W when the grease thickness is 20µm and
th(c-f)) is determined by the thickness and the thermal
Min.
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
CE(sat)
V
VEC
ton
trr
tc(on)
toff
tc(off)
ICES
Parameter
Collector-emitter saturation
voltage
FWD forward voltage
Switching times
Collector-emitter cut-off
current
VD = VDB = 15V
VIN = 5V
Tj = 25°C, –IC = 3A, VIN = 0V
V
CC = 300V, VD = VDB = 15V
IC = 3A, Tj = 125°C, VIN = 0 ↔ 5V
Inductive load (upper-lower arm)
CE = VCES
V
Condition
I
C = 3A, Tj = 25°C
IC = 3A, Tj = 125°C
T
j = 25°C
Tj = 125°C
Min. Typ. Max.
0.50
Limits
Typ. Max.
——
Limits
—
—
—
1.70
1.80
1.50
0.95
—
—
—
—
—
—
0.30
0.35
1.40
0.50
—
—
4.7
2.20
2.30
2.00
1.50
—
0.60
2.00
0.80
1
10
Unit
°C/W
Unit
V
V
µs
µs
µs
µs
µs
mA
CONTROL (PROTECTION) PART
—
—
—
—
4.9
—
20
—
0.8
Limits
—
—
—
—
—
—
0.48
1.00
—
—
—
—
—
2.1
1.3
0.65
2.80
0.55
2.80
0.55
0.95
0.53
1.50
12.0
12.5
12.5
13.0
Symbol
I
D
VFOH
VFOL
VSC(ref)
IIN
UVDBt
UVDBr
UVDt
UVDr
tFO
Vth(on)
Vth(off)
Vth(hys)
Parameter Condition
Circuit current
Fault output voltage
Short circuit trip level
Input current
Control supply under-voltage
protection
Fault output pulse width
ON threshold voltage
OFF threshold voltage
ON/OFF threshold hysteresis
voltage
V
D = VDB = 15V
V
IN = 5V
V
D = VDB = 15V
V
IN = 0V
SC = 0V, FO terminal pull-up to 5V by 10kΩ
V
V
SC = 1V, IFO = 1mA
T
j = 25°C, VD = 15V (Note 4)
V
IN = 5V
Total of V
P1-VNC, VN1-VNC
VUFB-U, VVFB-V, VWFB-W
Total of V
P1-VNC, VN1-VNC
VUFB-U, VVFB-V, VWFB-W
Trip level
j ≤ 125°C
T
Reset level
Trip level
Reset level
(Note 5)
Applied between U
P, VP, WP, UN, VN, WN-VNC
Min. Typ. Max.
0.43
0.70
10.0
10.5
10.3
10.8
0.35
Note 4 : Short circuit protection is functioning only for the lower-arms. Please select the external shunt resistance such that the SC trip-level is
less than 1.7 times of the current rating.
5:Fault signal is asserted corresponding to a short circuit or lower side control supply under-voltage failure.
—
—
2.6
—
—
Unit
mA
V
V
V
mA
V
V
V
V
µs
V
V
V
Mar. 2007
3