MITSUBISHI PM75CL1B120 Technical data

PM75CL1B120

MITSUBISHI <INTELLIGENT POWER MODULES>

PM75CL1B120

FLAT-BASE TYPE

INSULATED PACKAGE

FEATURE

Inverter + Drive & Protection IC

a) Adopting new 5th generation Full-Gate CSTBT

TM

chip

b) The over-temperature protection which detects the chip sur-

TM

face temperature of CSTBT

is adopted.

c) Error output signal is possible from all each protection up-

per and lower arm of IPM.

d) Compatible L-series package.

•3φ 75A, 1200V Current-sense and temperature sense
IGBT type inverter

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for, short­circuit, over-temperature & under-voltage (P-F

O available

from upper arm devices)

• UL Recognized

APPLICATION

General purpose inverter, servo drives and other motor controls

PACKAGE OUTLINES Dimensions in mm

7

3.25

44

NP

35

44

BUVW

2.5

19.5

22

7.75 98.25

L A B E L

120

106

±0.25

66.519.75

16 15.25

1616

44444444

6-23-23-23-2

1395119

232323

19-■0.5

25.7525

4-

φ2.5

9.5

55

2-φ5.5

MOUNTING HOLES

11.5

27.5

1.5

1

1.5

2-φ2.5

1

Te rminal code

1. VUPC

2. UFO

3. UP

4. VUP1

5. VVPC

6. VFO

7. VP

8. VVP1

9. VWPC

10. WFO

17

16

3

9.5

11. WP

12. VWP1

13. VNC

14. VN1

15. NC

16. UN

17. VN

18. WN

19. Fo

May 2009

1

INTERNAL FUNCTIONS BLOCK DIAGRAM

V

NC

Fo

V

NC

V

N1

W

N

N

MITSUBISHI <INTELLIGENT POWER MODULES>

PM75CL1B120

FLAT-BASE TYPE

INSULATED PACKAGE

WPV

U

N

V

WPC

WF

WP1

O

V

VPC

VPV

VF

VP1

O

V

UPC

UPV

UF

UP1

O

1.5k

Gnd In Fo Vcc

Gnd Si Out OT

NC N W V U P

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

1.5k 1.5k 1.5k

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART

Symbol Parameter Condition Unit

VCES

±IC
±ICP

PC
Tj

Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature

V

D = 15V, VCIN = 15V

T

C = 25°C (Note-1)

T

C = 25°C

T

C = 25°C (Note-1)

*: TC measurement point is just under the chip.

Ratings

1200

75
150
595

–20 ~ +150

V
A

A
W
°C

CONTROL PART

Symbol Parameter Condition Ratings Unit

VD

VCIN

FO

V

IFO

Supply Voltage

Input Voltage

Fault Output Supply Voltage

Fault Output Current

Applied between : V

Applied between : UP-VUPC, VP-VVPC, WP-VWPC

Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC

Sink current at UFO, VFO, WFO, FO terminals

UP1-VUPC, VVP1-VVPC

VWP1-VWPC, VN1-VNC

UN • VN • WN-VNC

FO-VNC

2

20

20

20

20

May 2009

V

V

V

mA

TOTAL SYSTEM

Symbol

V

CC(PROT)

V

CC(surge)

Tstg
Viso

Parameter
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Storage Temperature

Isolation Voltage

V

D = 13.5 ~ 16.5V

Inverter Part, T

Applied between : P-N, Surge value

60Hz, Sinusoidal, Charged part to Base, AC 1 min.

Condition

j = +125°C Start

THERMAL RESISTANCES

Symbol

Rth(j-c)Q
Rth(j-c)F

Rth(c-f)

Junction to case Thermal
Resistances

Contact Thermal Resistance

Parameter

Inverter IGBT part (per 1 element) (Note-1)
Inverter FWDi part (per 1 element) (Note-1)
Case to fin, (per 1 module)
Thermal grease applied (Note-1)

* If you use this value, Rth(f-a) should be measured just under the chips.

Condition

MITSUBISHI <INTELLIGENT POWER MODULES>

PM75CL1B120

FLAT-BASE TYPE

INSULATED PACKAGE

Min.

—
—

—

Ratings

800

1000

–40 ~ +125

2500

Limits

Typ. Max.

—
—

—

0.038

0.21

0.36

Unit

V

V

°C

V

rms

Unit

°C/W

(Note-1) T

axis

C (under the chip) measurement point is below.

arm

X
Y

IGBT

27.8
–8.0

UP

FWDi

27.8

1.0

VP WP UN VN WN

IGBT

FWDi

IGBT

87.4

65.4

65.4
–8.0

1.0

–8.0

FWDi

87.4

1.0

IGBT

38.7

7.6

FWDi

38.7
–1.4

Bottom view

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART

Symbol

CE(sat)

V

VEC
ton
trr
tc(on)
toff
tc(off)

ICES

Parameter

Collector-Emitter Saturation
Voltage

FWDi Forward Voltage

Switching Time

Collector-Emitter Cutoff
Current

D = 15V, IC = 75A

V
V

CIN = 0V, Pulsed (Fig. 1)

–I

C = 75A, VD = 15V, VCIN = 15V (Fig. 2)

D = 15V, VCIN = 0V↔15V

V
V

CC = 600V, IC = 75A

T

j = 125°C

Inductive Load (Fig. 3,4)

VCE = V

CES

, VD = 15V

Condition

(Fig. 5)

IGBT

54.5

7.6

FWDi

54.5
–1.4

T

j = 25°C

T

j = 125°C

j = 25°C

T
T

j = 125°C

(unit : mm)

FWDi

IGBT

76.5

76.5
–1.4

7.6

Min. Typ. Max.

—
—
—

0.3
—
—
—
—
—
—

Limits

1.65

1.85

2.3

0.8

0.3

0.4

1.2

0.4
—
—

2.15

2.35

3.3

2.0

0.8

1.0

2.8

1.2

10

Unit

V

V

µs

1

mA

May 2009

3