MITSUBISHI PM75B4LA060 Technical data
PM75B4LA060
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B4LA060
FLAT-BASE TYPE
INSULATED PACKAGE
FEATURE
a) Adopting new 5th generation IGBT (CSTBT
performance is improved by 1µm fine rule process.
For example, typical V
b) Over-temperature protection by detecting Tj of the CSTBT
chips and error output is possible from all each conservation upper and lower arm of IPM.
c) New small package
Reduce the package size by 10%, thickness by 22% from
S-DASH series.
•2φ 75A, 600V Current-sense IGBT type inverter
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-Fo available
from upper arm devices)
• UL Recognized Yellow Card No.E80276(N)
ce(sat)=1.55V @Tj=125°C
File No.E80271
TM
) chip, which
TM
APPLICATION
Photo voltaic power conditioner
PACKAGE OUTLINES Dimensions in mm
L A B E L
12011
106
1616
16 15.25
6-23-23-23-2
UVW
12 22
19-■0.5
2-φ5.5
MOUNTING HOLES
5511.75
32
13.5
13
31
2-φ2.5
Ter minal code
1. VUPC
2. UFO
3. UP
4. VUP1
5. VVPC
6. VFO
7. VP
16
+
–
8. VVP1
9. NC
10. NC
11. NC
12. NC
13. VNC
14. VN1
3
1
0.5
15. NC
16. UN
17. VN
18. NC
19. Fo
12
17.5 17.5
14.5
6-M5 NUTS
7
(SCREWING DEPTH)
12
7
(19.75)
NP
10.75
3.25
19.75
1591319
B
32.75 23 23 23
Jun. 2005
INTERNAL FUNCTIONS BLOCK DIAGRAM
NCV
FONC V
NC
N1
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B4LA060
FLAT-BASE TYPE
INSULATED PACKAGE
UP V
VP V
UNVNV
VPC
NCNCNCNC
VF
VP1
V
O
UPC
UF
UP1
O
1.5k
GND IN Fo Vcc
GND SC OUTOT
GND IN Fo Vcc
GND SC OUTOT
N
GND IN Fo Vcc
GND SC OUTOT
W
1.5k 1.5k
VB
GND IN Fo Vcc
GND SC OUTOT
UP
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol Parameter Condition Unit
VCES
±IC
±ICP
PC
Tj
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature
V
D = 15V, VCIN = 15V
T
C = 25°C
T
C = 25°C
T
C = 25°C
Ratings
600
75
150
390
–20 ~ +150
V
A
A
W
°C
CONTROL PART
VD
VCIN
VFO
IFO
Supply Voltage
Input Voltage
Fault Output Supply Voltage
Fault Output Current
Applied between : VUP1-VUPC
VVP1-VVPC, VN1-VNC
Applied between : UP-VUPC, VP-VVPC
UN • VN-VNC
Applied between : UFO-VUPC, VFO-VVPC, FO-VNC
Sink current at UFO, VFO, FO terminals
RatingsCondition UnitSymbol Parameter
20
20
20
20
V
V
V
mA
Jun. 2005
TOTAL SYSTEM
Symbol
V
CC(PROT)
V
CC(surge)
Tstg
Viso
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Storage Temperature
Isolation Voltage
Parameter
V
D = 13.5 ~ 16.5V, Inverter Part,
j = +125°C Start
T
Applied between : P-N, Surge value
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
THERMAL RESISTANCES
Symbol
Rth(j-c)Q
Rth(j-c)F
Rth(c-f)
Junction to case Thermal
Resistances
Contact Thermal Resistance
(Note-1) Tc (under the chip) measurement point is below.
arm
axis
X
Y
IGBT
30.4
–8.3
Parameter
UP
FWDi
30.4
–0.8
Inverter IGBT part (per 1/4 module) (Note-1)
Inverter FWDi part (per 1/4 module) (Note-1)
Case to fin, (per 1 module)
Thermal grease applied (Note-1)
VP UN VN
IGBT
FWDi
IGBT
39.7
61.7
61.7
6.3
–0.8
–8.3
FWDi
39.7
–1.2
Condition
Condition
(unit : mm)
IGBT
52.4
6.3
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B4LA060
FLAT-BASE TYPE
INSULATED PACKAGE
Ratings
400
500
–40 ~ +125
2500
Limits
Min.
—
—
—
FWDi
52.4
–1.2
Typ. Max.
—
—
—
0.32
0.53
0.038
Unit
V
V
°C
V
rms
Unit
°C/W
Bottom view
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
= 15V
Condition
(Fig. 5)
Symbol
CE(sat)
V
VEC
ton
trr
tc(on)
toff
tc(off)
ICES
Parameter
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Switching Time
Collector-Emitter
Cutoff Current
D = 15V, IC = 75A
V
V
CIN = 0V (Fig. 1)
–I
C = 75A, VD = 15V, VCIN = 15V (Fig. 2)
D = 15V, VCIN = 0V↔15V
V
V
CC = 300V, IC = 75A
T
j = 125°C
Inductive Load (Fig. 3,4)
VCE = V
CES
, V
CIN
T
j = 25°C
T
j = 125°C
j = 25°C
T
T
j = 125°C
Limits
Min. Typ. Max.
—
—
—
0.3
—
—
—
—
—
—
1.7
1.55
2.2
0.7
0.1
0.2
0.9
0.2
—
—
—
—
3.3
1.4
0.2
0.4
1.8
0.4
10
Unit
V
V
µs
1
mA
Jun. 2005
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