MITSUBISHI PM50CLB120 Technical data

MITSUBISHI <INTELLIGENT POWER MODULES>

■

PM50CLB120

FLAT-BASE TYPE

INSULATED PACKAGE

PM50CLB120

FEATURE

a) Adopting new 5th generation IGBT (CSTBT) chip, which

performance is improved by 1µm fine rule process.
For example, typical V

b) I adopt the over-temperature conservation by Tj detection of

CSTBT chip, and error output is possible from all each con­servation upper and lower arm of IPM.

c) New small package

Reduce the package size by 32%, thickness by 22% from
S-DASH series.

•3φ 50A, 1200V Current-sense IGBT type inverter

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for, short­circuit, over-temperature & under-voltage (P-Fo available
from upper arm devices)

• Acoustic noise-less 5.5kW/7.5kW class inverter application

• UL Recognized Yellow Card No.E80276(N)

APPLICATION

General purpose inverter, servo drives and other motor controls

ce(sat)=1.9V @Tj=125°C

File No.E80271

PACKAGE OUTLINES Dimensions in mm

120

106

7

3.25

44

NP

35

44

2.5

7.75 98.25

15

BUVW

44444444

19.5

22

±0.25

66.519.75

16 15.25

1616

6-23-23-23-2

91319

19-

0.5

17

2-φ5.5

MOUNTING HOLES

25.7525

55

4-φ2.5

232323

9.5

11.5

27.5

1.5

1

1.5

2-φ2.5

1

Terminal code

1. VUPC

2. UFO

3. UP

4. VUP1

5. VVPC

6. VFO

7. VP

8. VVP1

9. VWPC

10. WFO

16

3

9.5

11. WP

12. VWP1

13. VNC

14. VN1

15. NC

16. UN

17. VN

18. WN

19. Fo

May 2005

INTERNAL FUNCTIONS BLOCK DIAGRAM

V

NC

Fo

V

NC

V

N1

W

N

N

MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CLB120

FLAT-BASE TYPE

INSULATED PACKAGE

WPV

U

N

V

WPC

WF

WP1

O

V

VPC

VPV

VF

VP1

O

V

UPC

UPV

UF

UP1

O

1.5k

Gnd In Fo Vcc

Gnd Si Out OT

NC N W V U P

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

1.5k 1.5k 1.5k

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART

Symbol Parameter Condition Ratings Unit

VCES

±IC
±ICP

PC
Tj

Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature

D = 15V, VCIN = 15V

V

C = 25°C

T
T

C = 25°C
C = 25°C (Note-1)

T

1200

50
100
480

–20 ~ +150

V
A
A

W
°C

CONTROL PART

Symbol Parameter Condition Ratings Unit

VD

VCIN

VFO

IFO

Supply Voltage

Input Voltage

Fault Output Supply Voltage

Fault Output Current

Applied between : V

Applied between : UP-VUPC, VP-VVPC

Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC

Sink current at UFO, VFO, WFO, FO terminals

UP1-VUPC

VVP1-VVPC, VWP1-VWPC, VN1-VNC

WP-VWPC, UN • VN • WN-VNC

FO-VNC

20

20

20

20

May 2005

V

V

V

mA

TOTAL SYSTEM

ParameterSymbol

CC(PROT)

V

CC(surge)

V
Tstg
Viso

Supply Voltage Protected by
SC
Supply Voltage (Surge)
Storage Temperature

Isolation Voltage

THERMAL RESISTANCES

Symbol

Rth(j-c)Q
Rth(j-c)F

Rth(c-f)

Junction to case Thermal
Resistances

Contact Thermal Resistance

* If you use this value, R

Parameter

th(f-a) should be measured just under the chips.

MITSUBISHI <INTELLIGENT POWER MODULES>

Condition

V

D = 13.5 ~ 16.5V, Inverter Part,

T

j = +125°C Start

Applied between : P-N, Surge value

60Hz, Sinusoidal, Charged part to Base, AC 1 min.

Condition

Inverter IGBT (per 1 element) (Note-1)
Inverter FWDi (per 1 element) (Note-1)
Case to fin, (per 1 module)
Thermal grease applied (Note-1)

PM50CLB120

FLAT-BASE TYPE

INSULATED PACKAGE

Ratings

800

1000

–40 ~ +125

2500

Limits

Min.

—
—

—

Typ. Max.

0.26*

—

0.39*

—

0.038

—

Unit

V

V

°C

rms

V

Unit

°C/W

(Note-1) T

axis

C (under the chip) measurement point is below.

IGBT

28.3
–7.7

UP

FWDi

28.4

1.5

arm

X
Y

VP WP UN VN WN

IGBT

FWDi

IGBT

65.0

64.9

–7.7

1.5

87.0
–7.7

FWDi

86.9

1.5

IGBT

39.3

5.7

FWDi

39.2
–3.5

Bottom view

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART

CIN

= 15V

Condition

(Fig. 5)

Symbol

V

CE(sat)

VEC
ton
trr
tc(on)
toff
tc(off)

ICES

Parameter

Collector-Emitter
Saturation Voltage

FWDi Forward Voltage

Switching Time

Collector-Emitter
Cutoff Current

D = 15V, IC = 50A

V
V

CIN = 0V (Fig. 1)
C = 50A, VD = 15V, VCIN = 15V (Fig. 2)

–I

D = 15V, VCIN = 0V↔15V

V
V

CC = 600V, IC = 50A

j = 125°C

T
Inductive Load (Fig. 3,4)

VCE = V

CES

, V

IGBT

54.0

5.7

FWDi

54.1
–3.5

j = 25°C

T

j = 125°C

T

T

j = 25°C
j = 125°C

T

(Unit : mm)

IGBT

FWDi

76.0

76.1

5.7

–3.5

Min. Typ. Max.

—
—
—

0.5

—
—
—
—
—
—

Limits

1.8

1.9

2.5

1.0

0.5

0.4

2.0

0.7

—

—

2.3

2.4

3.5

2.5

0.8

1.0

3.0

1.2

10

Unit

V

V

µs

1

mA

May 2005

MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CLB120

FLAT-BASE TYPE

INSULATED PACKAGE

CONTROL PART

—
—

1.2

1.7

100

—

135

—

11. 5

—
—
—

1.0

Limits

15

1.5

2.0

—

0.2

145

125

12.0

12.5

—

10

1.8

25
10

1.8

2.3

—

—

—
—

—

15

—

Unit

mA

V

A

µs

°C

V

mA

ms

Max.

5

12.5

0.01

Symbol

ID

V

th(ON)

Vth(OFF)
SC

t

off(SC)

OT
OT

r

UV
UV

r

IFO(H)
IFO(L)

tFO

Circuit Current

Input ON Threshold Voltage
Input OFF Threshold Voltage
Short Circuit Trip Level
Short Circuit Current Delay
Time

Over Temperature Protection

Supply Circuit Under-Voltage
Protection

Fault Output Current

Minimum Fault Output Pulse
Width

Parameter

Condition

VD = 15V, VCIN = 15V

Applied between : U

P-VUPC, VP-VVPC, WP-VWPC

VN1-VNC
V*P1-V*PC

UN • VN • WN-VNC

j ≤ 125°C, VD = 15V (Fig. 3,6)

–20 ≤ T

V

D = 15V (Fig. 3,6)

V

D = 15V

Detect T

j of IGBT chip

–20 ≤ T

j ≤ 125°C

D = 15V, VFO = 15V (Note-2)

V

D = 15V (Note-2)

V

Trip level
Reset level
Trip level
Reset level

Min. Typ.

(Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to

protect it.

MECHANICAL RATINGS AND CHARACTERISTICS

Symbol

—
—

Parameter

Mounting torque

Weight

Mounting part screw : M5

Condition

—

Min.

2.5

—

RECOMMENDED CONDITIONS FOR USE

Symbol Parameter

VCC

VD

VCIN(ON)
VCIN(OFF)
fPWM

tdead

Supply Voltage

Control Supply Voltage

Input ON Voltage
Input OFF Voltage
PWM Input Frequency
Arm Shoot-through
Blocking Time

Applied across P-N terminals
Applied between : V

Applied between : U

Using Application Circuit of Fig. 8

For IPM’s each input signals (Fig. 7)

Condition

UP1-VUPC, VVP1-VVPC

VWP1-VWPC, VN1-VNC (Note-3)

P-VUPC, VP-VVPC, WP-VWPC

UN • VN • WN-VNC

(Note-3) With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak

Recommended value

Limits

Typ.

3.0

340

≤ 800

15.0 ± 1.5

≤ 0.8
≥ 9.0

≤ 20

≥ 2.5

Max.

3.5

—

Unit

N • m

g

Unit

V

V

V

kHz

µs

May 2005

MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CLB120

FLAT-BASE TYPE

INSULATED PACKAGE

PRECAUTIONS FOR TESTING

1. Before appling any control supply voltage (V
sponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.

2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be al­lowed to rise above V

CES rating of the device.

(These test should not be done by using a curve tracer or its equivalent.)

D), the input terminals should be pulled up by resistores, etc. to their corre-

P, (U,V,W)

P, (U,V,W)

IN

V

(0V)

CIN

Fo

D

(all)

V

Fig. 1 V

a) Lower Arm Switching

Signal input

V

CIN

(Upper Arm)

(15V)

V

Signal input

CIN

(Lower Arm)

b) Upper Arm Switching

CIN

V

CIN

(15V)

Signal input

(Upper Arm)

Signal input

(Lower Arm)

V

V V

Ic

V

(15V)

CIN

U,V,W, (N) U,V,W, (N)

CE(sat)

Test Fig. 2 VEC Test

P

Fo

U,V,W

Fo

V

D

(all)

Fo

D

(all)

V

N

P

Fo

U,V,W

N

Vcc

C

S

Ic

Vcc

C

S

Ic

IN
Fo

VD (all)

trr

Irr

90%

10%

V

CIN

(ton= td (on) + tr) (toff= td (off) + tf)

10% 10%

tc (on) tc (off)

trtd (on)

Fig. 3 Switching time and SC test circuit Fig. 4 Switching time test waveform

V

V

CIN

(15V)

IN
Fo

V

D

(all)

Fig. 5 I

P, (U,V,W)

U,V,W, (N)

CES

Test

CIN

A

Pulse

V

CE

Ic

Fo

Short Circuit Current

Constant Current

toff(SC)

Fig. 6 SC test waveform

Ic

td (off)

–

Ic

V

CE

90%

10%

tf

SC

IPM’ input signal V

(Upper Arm)

IPM’ input signal V

(Lower Arm)

1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value

CIN

0V

CIN

0V

1.5V 1.5V

2V

t

dead

2V

1.5V

t

dead

2V

t

dead

Fig. 7 Dead time measurement point example

t

t

May 2005

MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CLB120

FLAT-BASE TYPE

INSULATED PACKAGE

≥10µ

20k

→

V

D

IF

≥0.1µ

V

D

V

D

20k

→

IF

≥0.1µ

20k

→

IF

≥0.1µ

→

V

D

IF

20k

≥0.1µ

≥10µ

≥10µ

≥10µ

VUP1

UFo

VUPC

VVP1

VFo

VVPC

VWP1

WFo

WP

VWPC

UN

VN

VN1

WN

VNC

UP

VP

1.5k

1.5k

1.5k

Vcc

Fo

In

Vcc

Fo

In

Vcc

Fo

In

Vcc

Fo

In

Vcc

Fo

In

Vcc

Fo

In

GND

OT

OUT

Si

GNDGND

OT

OUT

Si

GNDGND

OT

OUT

Si

GNDGND

OT

OUT

Si

GNDGND

OT

OUT

Si

GNDGND

OT

OUT

Si

GND

P

U

V

W

N

NC

+

–

M

NC

1k

5V

1.5k

Fo

: Interface which is the same as the U-phase

Fig. 8 Application Example Circuit

NOTES FOR STABLE AND SAFE OPERATION ;

Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the

•

stray capacity between the input and output wirings of opto-coupler.

Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.

•

Fast switching opto-couplers: tPLH, tPHL ≤ 0.8µs, Use High CMR type.

•

Slow switching opto-coupler: CTR > 100%

•

Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the

•

power supply.

Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N

•

terminal.

Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line

•

and improve noise immunity of the system.

May 2005

MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CLB120

FLAT-BASE TYPE

INSULATED PACKAGE

PERFORMANCE CURVES

OUTPUT CHARACTERISTICS
(INVERTER PART · TYPICAL)

60

T

j

= 25°C

(A)

50

C

40

30

20

10

COLLECTOR CURRENT I

0

0

COLLECTOR-EMITTER VOLTAGE V

COLLECTOR-EMITTER SATURATION

VOLTAGE (VS. V

(INVERTER PART · TYPICAL)

2

(V)

CE (sat)

1.5

1

0.5

COLLECTOR-EMITTER

SATURATION VOLTAGE V

0

1312 1514 1716

VD = 17V

15V

13V

10.5 1.5 2

D

) CHARACTERISTICS

IC = 50A

j

= 25°C

T
T

j

= 125°C

CE

18

(V)

COLLECTOR-EMITTER SATURATION

VOLTAGE (VS. Ic) CHARACTERISTICS

(INVERTER PART · TYPICAL)

2

VD = 15V

(V)

CE (sat)

1.5

1

0.5

COLLECTOR-EMITTER

SATURATION VOLTAGE V

0

0

20 40 6010 30 50

COLLECTOR CURRENT IC (A)

SWITCHING TIME CHARACTERISTICS

1

10

VCC = 600V

7

(µs)

V

D

= 15V

5
4

T

j

c(off)

, t

c(on)

10

3

2

0

7
5

4
3

2

= 25°C

T

j

= 125°C

Inductive load

t

c(off)

t

c(on)

SWITCHING TIME t

–1

10

10

0

44

23 57

(TYPICAL)

1

10

T

j

= 25°C

T

j

= 125°C

23 57

10

2

CONTROL SUPPLY VOLTAGE VD (V) COLLECTOR CURRENT IC (A)

SWITCHING TIME CHARACTERISTICS

1

10

7
5

(µs)

4

off

3

, t

on

SWITCHING TIME t

10

10

t

off

2

0

t

on

7
5

4
3

2

–1

0

10

(TYPICAL)

VCC = 600V
V
T
T
Inductive load

10

1

44

23 57

COLLECTOR CURRENT IC (A)

t

off

D

= 15V

j

= 25°C

j

= 125°C

23 57

10

2

SWITCHING LOSS CHARACTERISTICS

1

10

7
5

(mJ/pulse)

4
3

SW(off)

2

, E

0

10

SW(on)

ESW(on)

7

ESW(off)

5

ESW(on)

4

ESW(off)

3

2

–1

10

0

10

SWITCHING LOSS E

(TYPICAL)

44

23 57

COLLECTOR CURRENT IC (A)

VCC = 600V

D

V
T
T
Inductive load

1

23 57

10

= 15V

ESW(on)
ESW(on)

ESW(off)

ESW(off)

j

= 25°C

j

= 125°C

10

2

May 2005

MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CLB120

FLAT-BASE TYPE

INSULATED PACKAGE

DIODE FORWARD CHARACTERISTICS

(A)

C

COLLECTOR RECOVERY CURRENT –I

(INVERTER PART · TYPICAL)

2

10

VD = 15V

7
5

4
3

2

1

10

7

5
4

3

2

0

10

0

0.5 1 1.5 2 2.5

EMITTER-COLLECTOR VOLTAGE V

ID VS. fc CHARACTERISTICS

(TYPICAL)

50

VD = 15V
T

j

= 25°C

40

30

(mA)

D

I

20

10

0

5101520

T

j

= 25°C

T

j

= 125°C

EC

N-side

P-side

250

(V)

DIODE REVERSE RECOVERY CHARACTERISTICS

(INVERTER PART · TYPICAL)

0

10

7

(µs)

rr

5
4

3

2

I

rr

–1

t

7
5

4
3

2

–2

0

10

rr

I

rr

10

1

44

23 57

10

REVERSE RECOVERY TIME t

10

I

rr

VCC = 600V

D

= 15V

V
T
T
Inductive load

23 57

t

rr

t
t
I

I

j

= 25°C

j

= 125°C

rr

rr

rr

rr

10

COLLECTOR RECOVERY CURRENT –I

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(INVERTER PART)

0

10

7
5

3

th (j – c)

2

–1

10

7
5

3
2

–2

10

Single Pulse

7

IGBT Part;

5

NORMALIZED TRANSIENT

Per unit base = R

3

FWDi Part;

THERMAL IMPEDANCE Z

2

Per unit base = R

–3

10

–5

–4

23 57

10

23 57 23 57

10

10

–3

23 57

th(j – c)Q

th(j – c)F

–2

23 57

10

= 0.26°C/W

= 0.39°C/W

–1

0

10

23 57

10

2

10

(A)

rr

7
5

4
3

2

1

10

7
5

4
3

2

0

10

REVERSE RECOVERY CURRENT l

2

C

(A)

1

10

fc (kHz)

TIME (s)

May 2005