MITSUBISHI PM50CLB060 Technical data
MITSUBISHI <INTELLIGENT POWER MODULES>
■
PM50CLB060
FLAT-BASE TYPE
INSULATED PACKAGE
PM50CLB060
FEATURE
a) Adopting new 5th generation IGBT (CSTBT) chip, which
performance is improved by 1µm fine rule process.
For example, typical V
b) I adopt the over-temperature conservation by Tj detection of
CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM.
c) New small package
Reduce the package size by 32%, thickness by 22% from
S-DASH series.
•3φ 50A, 600V Current-sense IGBT type inverter
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-Fo available
from upper arm devices)
• Acoustic noise-less 3.7kW class inverter application
• UL Recognized Yellow Card No.E80276(N)
APPLICATION
General purpose inverter, servo drives and other motor controls
ce(sat)=1.5V @Tj=125°C
File No.E80271
PACKAGE OUTLINES Dimensions in mm
120
7
3.25
44
NP
35
44
2.5
7.75 98.25
15
BUVW
44444444
19.5
22
106
±0.25
66.519.75
16 15.25
1616
6-23-23-23-2
91319
0.5
19-
17
2-φ5.5
MOUNTING HOLES
25.7525
55
4-
φ2.5
232323
9.5
11.5
27.5
1.5
1
1.5
2-φ2.5
1
Terminal code
1. VUPC
2. UFO
3. UP
4. VUP1
5. VVPC
6. VFO
7. VP
8. VVP1
9. VWPC
10. WFO
16
3
9.5
11. WP
12. VWP1
13. VNC
14. VN1
15. NC
16. UN
17. VN
18. WN
19. Fo
May 2005
INTERNAL FUNCTIONS BLOCK DIAGRAM
V
NC
Fo
V
NC
V
N1
W
N
N
MITSUBISHI <INTELLIGENT POWER MODULES>
PM50CLB060
FLAT-BASE TYPE
INSULATED PACKAGE
WPV
U
N
V
WPC
WF
WP1
O
V
VPC
VPV
VF
VP1
O
V
UPC
UPV
UF
UP1
O
1.5k
Gnd In Fo Vcc
Gnd Si Out OT
NC N W V U P
Gnd In Fo Vcc
Gnd Si Out OT
Gnd In Fo Vcc
Gnd Si Out OT
1.5k 1.5k 1.5k
Gnd In Fo Vcc
Gnd Si Out OT
Gnd In Fo Vcc
Gnd Si Out OT
Gnd In Fo Vcc
Gnd Si Out OT
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol Parameter Condition Ratings Unit
VCES
±IC
±ICP
PC
Tj
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature
D = 15V, VCIN = 15V
V
C = 25°C
T
T
C = 25°C
C = 25°C (Note-1)
T
600
50
100
131
–20 ~ +150
V
A
A
W
°C
CONTROL PART
Symbol Parameter Condition Ratings Unit
VD
VCIN
VFO
IFO
Supply Voltage
Input Voltage
Fault Output Supply Voltage
Fault Output Current
Applied between : V
Applied between : UP-VUPC, VP-VVPC
Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC
Sink current at UFO, VFO, WFO, FO terminals
UP1-VUPC
VVP1-VVPC, VWP1-VWPC, VN1-VNC
WP-VWPC, UN • VN • WN-VNC
FO-VNC
20
20
20
20
May 2005
V
V
V
mA
TOTAL SYSTEM
ParameterSymbol
CC(PROT)
V
CC(surge)
V
Tstg
Viso
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Storage Temperature
Isolation Voltage
V
D = 13.5 ~ 16.5V, Inverter Part,
T
j = +125°C Start
Applied between : P-N, Surge value
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
THERMAL RESISTANCES
Symbol
Rth(j-c)Q
Rth(j-c)F
Rth(c-f)
Junction to case Thermal
Resistances
Contact Thermal Resistance
* If you use this value, R
(Note-1) Tc (under the chip) measurement point is below.
arm
axis
X
Y
Parameter
Inverter IGBT (per 1 element) (Note-1)
Inverter FWDi (per 1 element) (Note-1)
Case to fin, (per 1 module)
Thermal grease applied (Note-1)
th(f-a) should be measured just under the chips.
IGBT
29.0
–7.3
UP
FWDi
29.5
1.6
VP WP UN VN WN
IGBT
FWDi
IGBT
64.6
65.1
85.9
–7.3
2.1
–7.3
FWDi
86.4
2.1
Condition
Condition
IGBT
38.1
5.3
MITSUBISHI <INTELLIGENT POWER MODULES>
PM50CLB060
FLAT-BASE TYPE
INSULATED PACKAGE
Ratings
400
500
–40 ~ +125
2500
Limits
FWDi
37.6
–4.6
IGBT
54.8
5.3
FWDi
55.3
–4.6
(unit : mm)
IGBT
76.1
5.3
Min.
—
—
—
FWDi
75.6
–4.6
Typ. Max.
0.95*
—
1.61*
—
0.038
—
Unit
V
V
°C
rms
V
Unit
°C/W
Bottom view
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
= 15V
Condition
(Fig. 5)
Symbol
V
CE(sat)
VEC
ton
trr
tc(on)
toff
tc(off)
ICES
Parameter
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Switching Time
Collector-Emitter
Cutoff Current
D = 15V, IC = 50A
V
V
CIN = 0V (Fig. 1)
C = 50A, VD = 15V, VCIN = 15V (Fig. 2)
–I
D = 15V, VCIN = 0V↔15V
V
V
CC = 300V, IC = 50A
j = 125°C
T
Inductive Load (Fig. 3,4)
VCE = V
CES
, V
CIN
j = 25°C
T
j = 125°C
T
j = 25°C
T
j = 125°C
T
Limits
Min. Typ. Max.
—
—
—
0.5
—
—
—
—
—
—
1.6
1.5
2.2
1.0
0.2
0.4
1.2
0.5
—
—
2.1
2.0
3.3
2.4
0.4
1.0
2.5
1.0
10
Unit
V
V
µs
1
mA
May 2005
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