MITSUBISHI PM450CLA120 Technical data

MITSUBISHI <INTELLIGENT POWER MODULES>

PM450CLA120

FLAT-BASE TYPE

INSULATED PACKAGE

FEATURE

a) Adopting new 5th generation IGBT (CSTBT) chip, which

performance is improved by 1µm fine rule process. For example, typical V

b) I adopt the over-temperature conservation by Tj detection of

CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM.

•3φ 450A, 1200V Current-sense IGBT type inverter

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (Fo available from all arm devices)

• Acoustic noise-less 75kW class inverter application

• UL Recognized Yellow Card No.E80276(N)

ce(sat)=1.9V @Tj=125°C

File No.E80271

APPLICATION

General purpose inverter, servo drives and other motor controls

PACKAGE OUTLINES Dimensions in mm

172

162

0.5

50±

50

31.84

3-2.543.22

21222423252628

21 3-2.54

12

171217

24- 0.64

27

50±

0.5

31.84

3-2.543.22

29303231333436

21 3-2.54

12

171217

(24)2

+1.0

17

–0.5

6

6.5

5.5

0.5

99

35.5

36.6

110±

Terminal code

1. N

2. P

3. N

4. P

5. N

6. P

35

123

13.5

7. W

8. W

9. V

10. V

11. U

12. U

137

20

150

13. VUPC

14. UPFO

15. UP

16. VUP1

17. VUNC

18. UNFO

LABEL

8-φ3.5

12

(SCREWING DEPTH)

19. UN

20. VUN1

21. VVPC

22. VPFO

23. VP

24. VVP1

25. VVNC

26. VNFO

27. VN

28. VVN1

29. VWPC

30. WPFO

31. WP

32. VWP1

33. VWNC

34. WNFO

35. WN

36. VWN1

12-M6 NUTS

7.75

94.5

8-φ5.5 MOUNTING HOLES

11

50±

6

55

3.75

(15.5)

0.5

14 22 28 22 2228

121110987

9.08

50

31.84

3-2.543.22

13141615171820

19

21 3-2.54

53.75 50 53.75

12 34 56

12

171217

6-φ2.5

Jul. 2005

INTERNAL FUNCTIONS BLOCK DIAGRAM

WN V

WNC

NFO

1.5k 1.5k 1.5k 1.5k 1.5k 1.5k

V

WN1

W

V

WPC

WP V

W

PFO

WP1

V

VNC

VN V

V

NFO

VN1

V

VPC

MITSUBISHI <INTELLIGENT POWER MODULES>

PM450CLA120

FLAT-BASE TYPE

INSULATED PACKAGE

UN V

VP V

V

PFO

VP1

UNC

NFO

V

UN1

U

V

UPC

UP V

U

PFO

UP1

Gnd In Fo Vcc

Gnd Si Out OT

NWP

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

NVP

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

NUP

Gnd In Fo Vcc

Gnd Si Out OT

MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART

Symbol Parameter Condition Ratings Unit

VCES

±IC ±ICP

PC Tj

Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature

V

D = 15V, VCIN = 15V

T

C = 25°C

T

C = 25°C

T

C = 25°C (Note-1)

1200

450 900

2500

–20 ~ +150

V A A

W °C

CONTROL PART

Symbol

VD

VCIN

VFO

IFO

Supply Voltage

Input Voltage

Fault Output Supply Voltage

Fault Output Current

Parameter Condition Ratings Unit

Applied between : V

Applied between : UP-VUPC, VP-VVPC, WP-VWPC

Applied between : UPFO-VUPC, VPFO-VVPC, WPFO-VWPC

Sink current at UPFO, VPFO, WPFO, UNFO, VNFO, WNFO terminals

UP1-VUPC, VVP1-VVPC, VWP1-VWPC

VUN1-VUNC, VVN1-VVNC, VWN1-VWNC

UN-VUNC, VN-VVNC, WN-VWNC

UNFO-VUNC, VNFO-VVNC, WNFO-VWNC

20

V

mA

Jul. 2005

TOTAL SYSTEM

Symbol

V

CC(PROT)

V

CC(surge)

Tstg Viso

Supply Voltage Protected by SC Supply Voltage (Surge) Storage Temperature

Isolation Voltage

Parameter

V

D = 13.5 ~ 16.5V, Inverter Part,

j = +125°C Start

T

Applied between : P-N, Surge value

60Hz, Sinusoidal, Charged part to Base, AC 1 min.

THERMAL RESISTANCES

Symbol

Rth(j-c)Q Rth(j-c)F

Rth(c-f)

Junction to case Thermal Resistances

Contact Thermal Resistance

(Note-1) Tc measurement point is just under the chip.

If you use this value, R

Table 1: T

C (under the chip) measurement point is below.

arm

axis

X Y

IGBT

30.1

82.7

Parameter

UP

FWDi

19.2

82.7

Inverter IGBT (per 1 element) (Note-1) Inverter FWDi (per 1 element) (Note-1) Case to fin, (per 1 module) Thermal grease applied (Note-1)

th(f-a) should be measured just under the chips.

VP WP UN VN WN

IGBT

FWDi

IGBT

80.1

69.2

130.1

82.7

FWDi

119.2

82.7

Condition

IGBT

19.8

27.2

MITSUBISHI <INTELLIGENT POWER MODULES>

PM450CLA120

FLAT-BASE TYPE

INSULATED PACKAGE

Ratings

800

1000

–40 ~ +125

2500

Limits

FWDi

30.7

27.2

IGBT

69.8

27.2

FWDi

80.7

27.2

(Unit : mm)

IGBT

119.8

27.2

Min.

—

FWDi

130.7

27.2

Typ. Max.

— —

—

0.05

0.09

0.014

Unit

V

°C

V

rms

Unit

°C/W

Name plate side

7

Bottom view

13

X

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART

= 15V

Condition

(Fig. 5)

Symbol

CE(sat)

V

VEC ton trr tc(on) toff tc(off)

ICES

Parameter

Collector-Emitter Saturation Voltage FWDi Forward Voltage

Switching Time

Collector-Emitter Cutoff Current

D = 15V, IC = 450A

V V

CIN = 0V (Fig. 1)

–I

C = 450A, VD = 15V, VCIN = 15V (Fig. 2)

D = 15V, VCIN = 0V↔15V

V V

CC = 600V, IC = 450A

T

j = 125°C

Inductive Load (Fig. 3, 4)

VCE = V

CES

, V

CIN

Y

16

T

j = 25°C

T

j = 125°C

T

j = 25°C

T

j = 125°C

Limits

Min. Typ. Max.

— — —

0.5

— — — — — —

1.8

1.9

2.8

1.0

0.5

0.4

2.3

0.7

— —

2.3

2.4

3.9

2.5

0.8

1.0

3.5

1.2

10

Unit

V

µs

1

mA

Jul. 2005