MITSUBISHI INTELLIGENT POWER MODULES
PM400HSA120
FLA T-BASE TYPE
INSULA TED P ACKAGE
N
DB
P-THD.(2 Typ.)
G
V
1
1
F
O
5
2
S
R
C
I
3
V
C
4
Rfo
A
C
K
LABEL
F
E
C
J
R-DIA.(4 Typ.)
N
12345
U-DIA.(2 Typ.)
T-(4 Typ.)
L
H
SE
M
0.64 MM SQ. PIN (5 Typ.)
5. FO
4. VC
3. CI
2. SR
1. V1
Q
Description:
Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to
20kHz. Built-in control circuits pro-
Rref
Vcc
TEMP
FO
OUT1
SR
OUT2
SENS
Ci
IN
SINK
GND
AMP
Rg
Th
C
vide optimum gate drive and protection for the IGBT and free-wheel
diode power devices.
Features:
u Complete Output Power
Circuit
u Gate Drive Circuit
u Protection Logic
– Short Circuit
– Over Current
– Over T emperature
E
– Under Voltage
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 3.86 98.0
B 3.46 88.0
C 3.15±0.01 80.0±0.25
D 2.76±0.01 70.0±0.25
E 2.56 65.0
F 1.57 40.0
G 1.34 +0.04/-0.02 34.0 +1.0/-0.5
H 1.16 29.5
J 0.79 20.0
K 0.71 18.0
Dimensions Inches Millimeters
L 0.63 16.0
M 0.59 15.0
N 0.35 9.0
P Metric M8 M8
Q 0.28 7.0
R 0.26 Dia. Dia. 6.5
S 0.10 2.5
T 0.100 2.54
U 0.08 Dia. 2.0 Dia.
Applications:
u Inverters
u UPS
u Motion/Servo Control
u Power Supplies
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. PM400HSA120 is a 1200V,
400 Ampere Intelligent Power Module.
Type Current Rating V
Amperes Volts (x 10)
PM 400 120
CES
Sep.1998
MITSUBISHI INTELLIGENT POWER MODULES
PM400HSA120
FLA T-BASE TYPE
INSULA TED PACKAGE
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings Symbol PM400HSA120 Units
Power Device Junction Temperature T
Storage T emperature T
Case Operating Temperature T
j
stg
C
Mounting Torque, M6 Mounting Screws — 3.92~5.88 N · m
Mounting Torque, M8 Main Terminal Screws — 8.83~10.8 N · m
Module Weight (Typical) — 630 Grams
Supply Voltage Protected by OC and SC (VD = 13.5 - 16.5V, Inverter Part) V
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
CC(prot.)
iso
Control Sector
Supply Voltage (Applied between V1-VC)V
Input Voltage (Applied between C1-VC)V
Fault Output Supply Voltage (Applied between Fo-Vc)V
Fault Output Current (Fault Current of FO T erminal) I
D
CIN
FO
FO
-20 to 150 °C
-40 to 125 °C
-20 to 100 °C
800 Volts
2500 Vrms
20 Volts
10 Volts
20 Volts
20 mA
IGBT Inverter Sector
Collector-Emitter Voltage (VD = 15V, V
Collector Current, (TC = 25°C) I
Peak Collector Current, (TC = 25°C) I
Collector Dissipation P
= 5V) V
CIN
CES
C
CP
C
1200 Volts
400 Amperes
800 Amperes
2315 Watts
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Control Sector
Over Current Trip Level Inverter Part OC -20°C ≤ Tj ≤ 125°C, VD = 15V 480 650 — Amperes
Short Circuit Trip Level Inverter Part SC -20°C ≤ Tj ≤ 125°C, VD = 15V 650 930 — Amperes
Over Current Delay Time t
off(OC)
Over Temperature Protection OT Trip Level 100 110 120 °C
OT
r
Supply Circuit Under Voltage Protection UV Trip Level 11.5 12.0 12.5 Volts
UV
r
Supply Voltage V
Circuit Current I
Input ON Threshold Voltage V
Input OFF Threshold Voltage V
PWM Input Frequency f
Fault Output Current I
Minimum Fault Output Pulse Width t
SR Terminal Output Voltage V
D
th(on)
th(off)
PWM
FO(H)
I
FO(L)
FO
SR
D
VD = 15V, V
-20°C ≤ Tj ≤125°C, Rin = 6.8 kΩ 4.5 5.1 5.6 Volts
VD = 15V — 5 — µs
Reset Level 85 95 105 °C
Reset Level — 12.5 — Volts
Applied between V1-V
= 5V, V1-V
CIN
Applied between C1-V
Applied between C1-V
C
C
C
C
13.5 15 16.5 Volts
—2330mA
1.2 1.5 1.8 Volts
1.7 2.0 2.3 Volts
3-φ Sinusoidal — 15 20 kHz
VD = 15V , VFO = 15V — — 0.01 mA
VD = 15V , VFO = 15V — 10 15 mA
VD = 15V 1.0 1.8 — ms
Sep.1998