MITSUBISHI PM25CLB120 Technical data
PM25CLB120
■
MITSUBISHI <INTELLIGENT POWER MODULES>
PM25CLB120
FLAT-BASE TYPE
INSULATED PACKAGE
FEATURE
a) Adopting new 5th generation IGBT (CSTBT) chip, which
performance is improved by 1µm fine rule process.
For example, typical V
b) I adopt the over-temperature conservation by Tj detection of
CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM.
•3φ 25A, 1200V Current-sense IGBT type inverter
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-Fo available
from upper arm devices)
• Acoustic noise-less 3.7kW class inverter application
• UL Recognized Yellow Card No.E80276(N)
ce(sat)=1.9V @Tj=125°C
File No.E80271
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES Dimensions in mm
120
7
3.25
44
NP
35
44
2.5
7.75 98.25
15
BUVW
44444444
19.5
22
106
±0.25
66.519.75
16 15.25
1616
6-23-23-23-2
91319
0.5
19-
17
2-φ5.5
MOUNTING HOLES
25.7525
55
4-
φ2.5
232323
9.5
11.5
27.5
1.5
1
1.5
2-φ2.5
1
Terminal code
1. VUPC
2. UFO
3. UP
4. VUP1
5. VVPC
6. VFO
7. VP
8. VVP1
9. VWPC
10. WFO
16
3
9.5
11. WP
12. VWP1
13. VNC
14. VN1
15. NC
16. UN
17. VN
18. WN
19. Fo
May 2005
INTERNAL FUNCTIONS BLOCK DIAGRAM
V
NC
Fo
V
NC
V
N1
W
N
N
MITSUBISHI <INTELLIGENT POWER MODULES>
PM25CLB120
FLAT-BASE TYPE
INSULATED PACKAGE
WPV
U
N
V
WPC
WF
WP1
O
V
VPC
VPV
VF
VP1
O
V
UPC
UPV
UF
UP1
O
1.5k
Gnd In Fo Vcc
Gnd Si Out OT
NC N W V U P
Gnd In Fo Vcc
Gnd Si Out OT
Gnd In Fo Vcc
Gnd Si Out OT
1.5k 1.5k 1.5k
Gnd In Fo Vcc
Gnd Si Out OT
Gnd In Fo Vcc
Gnd Si Out OT
Gnd In Fo Vcc
Gnd Si Out OT
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol Parameter Condition Ratings Unit
VCES
±IC
±ICP
PC
Tj
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature
D = 15V, VCIN = 15V
V
C = 25°C
T
T
C = 25°C
C = 25°C (Note-1)
T
1200
25
50
150
–20 ~ +150
V
A
A
W
°C
CONTROL PART
Symbol Parameter Condition Ratings Unit
VD
VCIN
VFO
IFO
Supply Voltage
Input Voltage
Fault Output Supply Voltage
Fault Output Current
Applied between : V
Applied between : UP-VUPC, VP-VVPC
Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC
Sink current at UFO, VFO, WFO, FO terminals
UP1-VUPC
VVP1-VVPC, VWP1-VWPC, VN1-VNC
WP-VWPC, UN • VN • WN-VNC
FO-VNC
20
20
20
20
May 2005
V
V
V
mA
TOTAL SYSTEM
ParameterSymbol
CC(PROT)
V
CC(surge)
V
Tstg
Viso
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Storage Temperature
Isolation Voltage
THERMAL RESISTANCES
Symbol
Rth(j-c)Q
Rth(j-c)F
Rth(c-f)
Junction to case Thermal
Resistances
Contact Thermal Resistance
* If you use this value, R
Parameter
th(f-a) should be measured just under the chips.
MITSUBISHI <INTELLIGENT POWER MODULES>
Condition
V
D = 13.5 ~ 16.5V, Inverter Part,
T
j = +125°C Start
Applied between : P-N, Surge value
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
Condition
Inverter IGBT (per 1 element) (Note-1)
Inverter FWDi (per 1 element) (Note-1)
Case to fin, (per 1 module)
Thermal grease applied (Note-1)
PM25CLB120
FLAT-BASE TYPE
INSULATED PACKAGE
Ratings
800
1000
–40 ~ +125
2500
Limits
Min.
—
—
—
Typ. Max.
0.83*
—
1.36*
—
0.038
—
Unit
V
V
°C
rms
V
Unit
°C/W
(Note-1) T
axis
C (under the chip) measurement point is below.
IGBT
29.0
–7.1
UP
FWDi
29.3
1.5
arm
X
Y
VP WP UN VN WN
IGBT
FWDi
IGBT
65.0
65.5
–7.1
2.0
85.6
–7.1
FWDi
85.9
2.0
IGBT
37.8
5.1
FWDi
37.5
–4.5
Bottom view
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
= 15V
Condition
(Fig. 5)
Symbol
V
CE(sat)
VEC
ton
trr
tc(on)
toff
tc(off)
ICES
Parameter
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Switching Time
Collector-Emitter
Cutoff Current
D = 15V, IC = 25A
V
V
CIN = 0V (Fig. 1)
C = 25A, VD = 15V, VCIN = 15V (Fig. 2)
–I
D = 15V, VCIN = 0V↔15V
V
V
CC = 600V, IC = 25A
j = 125°C
T
Inductive Load (Fig. 3,4)
VCE = V
CES
, V
CIN
IGBT
55.2
5.1
FWDi
55.7
–4.5
j = 25°C
T
j = 125°C
T
T
j = 25°C
j = 125°C
T
(Unit : mm)
IGBT
FWDi
75.8
75.3
5.1
–4.5
Min. Typ. Max.
—
—
—
0.5
—
—
—
—
—
—
Limits
1.8
1.9
2.5
1.0
0.5
0.4
2.0
0.7
—
—
2.3
2.4
3.5
2.5
0.8
1.0
3.0
1.2
10
Unit
V
V
µs
1
mA
May 2005
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