MITSUBISHI PM25CLA120 Technical data

PM25CLA120

MITSUBISHI <INTELLIGENT POWER MODULES>

PM25CLA120

FLAT-BASE TYPE

INSULATED PACKAGE

FEATURE

a) Adopting new 5th generation IGBT (CSTBT) chip, which

performance is improved by 1µm fine rule process.
For example, typical V

b) I adopt the over-temperature conservation by Tj detection of

CSTBT chip, and error output is possible from all each con­servation upper and lower arm of IPM.

•3φ 25A, 1200V Current-sense IGBT type inverter

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for, short­circuit, over-temperature & under-voltage (P-Fo available
from upper arm devices)

• Acoustic noise-less 3.7kW class inverter application

• UL Recognized Yellow Card No.E80276(N)

ce(sat)=1.9V @Tj=125°C

File No.E80271

APPLICATION

General purpose inverter, servo drives and other motor controls

PACKAGE OUTLINES Dimensions in mm

12011

106

1616

16 15.25

6-23-23-23-2

UVW

12 22

19-■0.5

2-φ5.5

MOUNTING HOLES

5511.75

32

13.5

13

31

2-φ2.5

Terminal code

1. VUPC

2. UFO

3. UP

4. VUP1

5. VVPC

6. VFO

7. VP

8. VVP1

9. VWPC

10. WFO

16

+

1

–

0.5

11. WP

12. VWP1

13. VNC

14. VN1

15. NC

16. UN

17. VN

18. WN

19. Fo

3

12

17.5 17.5

14.5

6-M5 NUTS

7

(SCREWING DEPTH)

12

7

19.75

NP

10.75

3.25

19.75

1591319

B

32.75 23 23 23

May 2005

INTERNAL FUNCTIONS BLOCK DIAGRAM

V

NC

Fo

V

NC

V

N1

W

N

N

MITSUBISHI <INTELLIGENT POWER MODULES>

PM25CLA120

FLAT-BASE TYPE

INSULATED PACKAGE

WPV

U

N

V

WPC

WF

WP1

O

V

VPC

VPV

VF

VP1

O

V

UPC

UPV

UF

UP1

O

1.5k

Gnd In Fo Vcc

Gnd Si Out OT

NC N W V U P

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

1.5k 1.5k 1.5k

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART

Symbol Parameter Condition Unit

VCES

±IC
±ICP

PC
Tj

Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature

D = 15V, VCIN = 15V

V

C = 25°C

T
T

C = 25°C
C = 25°C (Note-1)

T

Ratings

1200

25
50

150

–20 ~ +150

V
A
A

W
°C

CONTROL PART

Symbol Parameter Condition Ratings Unit

VD

VCIN

VFO

IFO

Supply Voltage

Input Voltage

Fault Output Supply Voltage

Fault Output Current

Applied between : V

Applied between : UP-VUPC, VP-VVPC

Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC

Sink current at UFO, VFO, WFO, FO terminals

UP1-VUPC

VVP1-VVPC, VWP1-VWPC, VN1-VNC

WP-VWPC, UN • VN • WN-VNC

FO-VNC

20

20

20

20

May 2005

V

V

V

mA

TOTAL SYSTEM

CC(PROT)

V

CC(surge)

V
Tstg
Viso

ParameterSymbol
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Storage Temperature

Isolation Voltage

V

D = 13.5 ~ 16.5V, Inverter Part,

T

j = +125°C Start

Applied between : P-N, Surge value

60Hz, Sinusoidal, Charged part to Base, AC 1 min.

Condition

THERMAL RESISTANCES

Symbol

Rth(j-c)Q
Rth(j-c)F

Rth(c-f)

Junction to case Thermal
Resistances

Contact Thermal Resistance

Parameter

Inverter IGBT (per 1 element) (Note-1)
Inverter FWDi (per 1 element) (Note-1)
Case to fin, (per 1 module)
Thermal grease applied (Note-1)

* If you use this value, Rth(f-a) should be measured just under the chips.

Condition

MITSUBISHI <INTELLIGENT POWER MODULES>

PM25CLA120

FLAT-BASE TYPE

INSULATED PACKAGE

Min.

—
—

—

Ratings

800

1000

–40 ~ +125

2500

Limits

Typ. Max.

—
—

—

0.83*

1.36*

0.038

Unit

V

V

°C

rms

V

Unit

°C/W

(Note-1) TC (under the chip) measurement point is below.

arm

axis

X
Y

IGBT

29.0
–7.1

UP

FWDi

29.3

1.5

IGBT

65.0
–7.1

VP

FWDi

65.5

2.0

WP UN VN WN

IGBT

FWDi

IGBT

FWDi

85.6

85.9

37.8

37.5

–7.1

2.0

5.1

–4.5

Bottom view

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART

= 15V

Condition

(Fig. 5)

Symbol

V

CE(sat)

VEC
ton
trr
tc(on)
toff
tc(off)

ICES

Parameter

Collector-Emitter
Saturation Voltage

FWDi Forward Voltage

Switching Time

Collector-Emitter
Cutoff Current

D = 15V, IC = 25A

V
V

CIN = 0V (Fig. 1)

C = 25A, VD = 15V, VCIN = 15V (Fig. 2)

–I

D = 15V, VCIN = 0V↔15V

V
V

CC = 600V, IC = 25A
j = 125°C

T
Inductive Load (Fig. 3,4)

VCE = V

CES

, V

CIN

IGBT

55.2

5.1

FWDi

55.7
–4.5

j = 25°C

T

j = 125°C

T

T

j = 25°C

T

j = 125°C

(Unit : mm)

IGBT

FWDi

75.8

75.3

5.1

–4.5

Min. Typ. Max.

—
—
—

0.5

—
—
—
—
—
—

Limits

1.8

1.9

2.5

1.0

0.5

0.4

2.0

0.7

—
—

2.3

2.4

3.5

2.5

0.8

1.0

3.0

1.2

10

Unit

V

V

µs

1

mA

May 2005