MITSUBISHI PM200RL1A060 Technical data
PM200RL1A060
MITSUBISHI <INTELLIGENT POWER MODULES>
PM200RL1A060
FLAT-BASE TYPE
INSULATED PACKAGE
FEATURE
Inverter + Brake + Drive & Protection IC
a) Adopting new 5th generation Full-Gate CSTBT
TM
chip
b) The over-temperature protection which detects the chip sur-
TM
face temperature of CSTBT
is adopted.
c) Error output signal is possible from all each protection up-
per and lower arm of IPM.
d) Compatible L-series package.
•3φ 200A, 600V Current-sense and temperature sense
IGBT type inverter
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-F
O available
from upper arm devices)
• UL Recognized
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES Dimensions in mm
135
6-M5 Nuts
122.1
110±
26 26 40.5
0.5
11.7
6.05
(Screwing Depth)
13
18
11
4-φ5.5
Mounting Holes
(13)
WV U
10.5
71.5
66.5
3.25
6-2 3-2
10
19
2-φ2.5
13
19- 0.5
3-2 3-2
10 10
9 5 1
LABEL
30.15 11
1
18.7
6.05
B
N
P
20 20 21.5
+1
-0.5
24.1
78±0.5
90.1
33.6
110
Te rminal code
1. VUPC
34.7
2. UFO
3. UP
4. VUP1
5. VVPC
6. VFO
7. VP
8. VVP1
9. VWPC
10. WFO
4
11. WP
12. VWP1
13. VNC
14. VN1
15. Br
16. UN
17. VN
18. WN
19. Fo
May 2009
INTERNAL FUNCTIONS BLOCK DIAGRAM
V
Br
Fo
V
NC
V
N1
W
N
N
MITSUBISHI <INTELLIGENT POWER MODULES>
PM200RL1A060
FLAT-BASE TYPE
INSULATED PACKAGE
WPV
U
N
V
WPC
WF
WP1
O
V
VPC
VPV
VF
VP1
O
V
UPC
UPV
UF
UP1
O
1.5k
Gnd In Fo Vcc
Gnd Si Out OT
Gnd In Fo Vcc
Gnd Si Out OT
BNWVUP
Gnd In Fo Vcc
Gnd Si Out OT
Gnd In Fo Vcc
Gnd Si Out OT
1.5k 1.5k 1.5k
Gnd In Fo Vcc
Gnd Si Out OT
Gnd In Fo Vcc
Gnd Si Out OT
Gnd In Fo Vcc
Gnd Si Out OT
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol Parameter Condition Ratings Unit
VCES
±IC
±ICP
PC
Tj
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature
*: Tc measurement point is just under the chip.
V
D = 15V, VCIN = 15V
T
C = 25°C (Note-1)
T
C = 25°C
T
C = 25°C (Note-1)
600
200
400
625
–20 ~ +150
V
A
A
W
°C
BRAKE PART
Symbol Parameter Condition Ratings Unit
VCES
IC
ICP
PC
IF
VR(DC)
Tj
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
FWDi Forward Current
FWDi Rated DC Reverse Voltage
Junction Temperature
D = 15V, VCIN = 15V
V
T
C = 25°C (Note-1)
T
C = 25°C
T
C = 25°C (Note-1)
T
C = 25°C
T
C = 25°C
600
100
200
390
100
600
–20 ~ +150
CONTROL PART
Symbol
VD
VCIN
V
FO
IFO
Supply Voltage
Input Voltage
Fault Output Supply Voltage
Fault Output Current
Parameter Condition Ratings Unit
Applied between : V
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC
Sink current at UFO, VFO, WFO, FO terminals
UP1-VUPC, VVP1-VVPC
VWP1-VWPC, VN1-VNC
UN • VN • WN • Br-VNC
FO-VNC
20
20
20
20
May 2009
2
V
A
A
W
A
V
°C
V
V
V
mA
TOTAL SYSTEM
Symbol
V
CC(PROT)
V
CC(surge)
Tstg
Viso
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Storage Temperature
Isolation Voltage
Parameter
V
D = 13.5 ~ 16.5V
Inverter Part, T
Applied between : P-N, Surge value
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
THERMAL RESISTANCES
Symbol
Rth(j-c)Q
Rth(j-c)F
Rth(j-c)Q
Junction to case Thermal
Resistances
Rth(j-c)F
Rth(c-f)
Contact Thermal Resistance
* If you use this value, R
(Note-1) Tc (under the chip) measurement point is below.
arm
axis
X
Y
Parameter
Inverter IGBT part (per 1 element) (Note-1)
Inverter FWDi part (per 1 element) (Note-1)
Brake IGBT part (Note-1)
Brake FWDi upper part (Note-1)
Case to fin, (per 1 module)
Thermal grease applied (Note-1)
th(f-a) should be measured just under the chips.
VP WP UN VN WN BR
IGBT
FWDi
IGBT
88.0
58.0
58.0
57.4
46.6
57.4
IGBT
24.5
57.4
UP
FWDi
24.5
46.6
j = +125°C Start
IGBT
FWDi
39.0
88.0
28.2
46.6
Condition
Condition
FWDi
39.0
38.8
MITSUBISHI <INTELLIGENT POWER MODULES>
PM200RL1A060
FLAT-BASE TYPE
INSULATED PACKAGE
IGBT
72.5
28.2
FWDi
72.5
38.8
IGBT
102.5
28.2
Min.
—
—
—
—
—
FWDi
102.5
38.8
Ratings
400
500
–40 ~ +125
2500
Limits
Typ. Max.
—
—
—
—
—
(unit : mm)
IGBT
12.2
27.0
0.20
0.30
0.32
0.53
0.023
Di
6.8
61.4
Unit
V
V
°C
V
rms
Unit
°C/W
X
Bottom view
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
CE(sat)
V
VEC
ton
trr
tc(on)
toff
tc(off)
ICES
Parameter
Collector-Emitter Saturation
Voltage
FWDi Forward Voltage
Switching Time
Collector-Emitter Cutoff
Current
D = 15V, IC = 200A
V
V
CIN = 0V, Pulsed (Fig. 1)
–I
C = 200A, VD = 15V, VCIN = 15V (Fig. 2)
D = 15V, VCIN = 0V↔15V
V
V
CC = 300V, IC = 200A
T
j = 125°C
Inductive Load (Fig. 3,4)
VCE = V
CES
, VD = 15V
Condition
(Fig. 5)
Y
T
j = 25°C
T
j = 125°C
T
j = 25°C
T
j = 125°C
Limits
Min. Typ. Max.
—
—
—
0.3
—
—
—
—
—
—
1.75
1.75
1.7
0.8
0.4
0.4
1.0
0.3
—
—
2.35
2.35
2.8
2.0
0.8
1.0
2.3
1.0
10
Unit
V
V
µs
1
mA
May 2009
3
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