Mitsubishi PM200DSA060 Datasheet

MITSUBISHI INTELLIGENT POWER MODULES

PM200DSA060

FLA T-BASE TYPE

INSULA TED P ACKAGE

A

C

Q - DIA.
(2 TYP.)

E

F

R - M5 THD.
(3 TYP.)

VP1

FPO
SPR
CP1
VPC

VN1

FNO
SNR
CN1
VNC

B

L

C2E1 E2 C1

FO
SR
IN

FO
SR
IN

VCC

GND

VCC

GND

TEMP
OUT1
OUT2
SENS
SINK

TEMP
OUT1
OUT2
SENS
SINK

GGG

U

1

N

21345

2345

P

H

S

S

S

S

M

T - DIA.
(4 TYP.)

D

P

0.64 MM SQ. PIN
(10 TYP.)

K

N SIDE P SIDE

VN1

1.
SNR

2.
CN1

3.
VNC

4.
FNO

5.

VP1

1.
SPR

2.
CP1

3.
VPC

4.
FPO

5.

J

Description:

Mitsubishi Intelligent Power Mod­ules are isolated base modules de­signed for power switching applica­tions operating at frequencies to

N

20kHz. Built-in control circuits pro­vide optimum gate drive and pro-

C1

tection for the IGBT and free
wheel-diode power devices.

Features:

u Complete Output Power

Circuit

C2E1

u Gate Drive Circuit
u Protection Logic

– Short Circuit
– Over Current
– Over T emperature

E2

– Under Voltage

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.33 110.0
B 3.66±0.010 93.0±0.25
C 1.77 45.0
D 1.34 34.0
E 1.14 +0.04/-0.02 29.0 +1/-0.5
F 1.02 26.0
G 0.98 25.0
H 0.702 17.84

J 0.55 14.0

K 0.51 13.0

Dimensions Inches Millimeters

L 0.47 12.0
M 0.33 8.5
N 0.28 7.0

P 0.230 5.84
Q 0.22 Dia. Dia. 5.5
R M5 Metric M5

S 0.100 2.54

T 0.08 Dia. Dia. 2.0
U 0.08 2.0

Applications:

u Inverters
u UPS
u Motion/Servo Control
u Power Supplies

Ordering Information:

Example: Select the complete
part number from the table below

-i.e. PM200DSA060 is a 600V,
200 Ampere Intelligent Power Mod­ule.

Type Current Rating V

Amperes Volts (x 10)

PM 200 60

CES

Sep.1998

MITSUBISHI INTELLIGENT POWER MODULES

PM200DSA060

FLA T-BASE TYPE

INSULA TED PACKAGE

Absolute Maximum Ratings, Tj = 25°C unless otherwise specified

Ratings Symbol PM200DSA060 Units
Power Device Junction Temperature T
Storage T emperature T
Case Operating Temperature T
Mounting Torque, M5 Mounting Screws — 1.47 ~ 1.96 N · m
Mounting Torque, M5 Main Terminal Screws — 1.47 ~ 1.96 N · m
Module Weight (Typical) — 340 Grams
Supply Voltage Protected by OC and SC (VD = 13.5 - 16.5V , Inverter Part) V
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

j

stg

C

CC(prot.)

iso

Control Sector

Supply Voltage (Applied between VP1-VPC, VN1-VNC)V
Input Voltage (Applied between CP1-VPC, CN1-VNC)V
Fault Output Supply Voltage (Applied between Fpo-Vpc and Fno-Vnc)VFO20 Volts
Fault Output Current (Sink Current at FPO, FNO T erminal) I

D

CIN

FO

-20 to 150 °C

-40 to 125 °C

-20 to 100 °C

400 Volts

2500 Vrms

20 Volts
10 Volts

20 mA

IGBT Inverter Sector

Collector-Emitter Voltage (VD = 15V, V
Collector Current, (TC = 25°C) I
Peak Collector Current, (TC = 25°C) I
Supply Voltage (Applied between C1 - E2) V
Supply Voltage, Surge (Applied between C1 - E2) V
Collector Dissipation P

= 5V) V

CIN

CC(surge)

CES

C

CP

CC

C

600 Volts
200 Amperes
400 Amperes
450 Volts
500 Volts
595 Watts

Sep.1998

MITSUBISHI INTELLIGENT POWER MODULES

PM200DSA060

FLA T-BASE TYPE

INSULA TED PACKAGE

Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Control Sector

Over Current Trip Level Inverter Part OC -20°C ≤ T ≤ 125°C 310 400 — Amperes
Short Circuit Trip Level Inverter Part SC -20°C ≤ T ≤ 125°C 400 560 — Amperes
Over Current Delay Time t
Over T emperature Protection OT Trip Level 100 110 120 °C

Supply Circuit Under Voltage Protection UV Trip Level 11.5 12.0 12.5 Volts

Supply Voltage V
Circuit Current I

Input ON Threshold Voltage V
Input OFF Threshold V oltage V
PWM Input Frequency f
Fault Output Current I

Minimum Fault Output Pulse Width t
SXR Terminal Output Voltage V

off(OC)

OT

r

UV

r

D

D

th(on)
th(off)

PWM

FO(H)

I

FO(L)

FO
SXR

Applied between VP1-VPC, VN1-V

VD = 15V , V

V

= 15V, V

D

-20°C≤Tj ≤125°C, Rin = 6.8 kΩ (SPR, SNR) 4.5 5.1 5.6 Volts

VD = 15V — 5 — µs

Reset Level 85 95 105 °C

Reset Level — 12.5 — Volts

13.5 15 16.5 Volts

NC

= 5V, VN1-V

CIN

= 5V , V

CIN

Applied between 1.2 1.5 1.8 Volts

CP1-VPC, CN1-V

3-φ Sinusoidal — 15 20 kHz
VD = 15V, VFO = 15V — — 0.01 mA
VD = 15V, VFO = 15V — 10 15 mA

VD = 15V 1.0 1.8 — ms

NC

XP1-VXPC

NC

—1926mA
—1926mA

1.7 2.0 2.3 Volts

Sep.1998

MITSUBISHI INTELLIGENT POWER MODULES

PM200DSA060

FLA T-BASE TYPE

INSULA TED PACKAGE

Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

IGBT Inverter Sector

Collector Cutoff Current I

Emitter-Collector Voltage V
Collector-Emitter Saturation Voltage V

Inductive Load Switching Times t

t

t

CES

EC

CE(sat)

on

t

rr

C(on)

t

off

C(off)

VCE = V

V

= V

CE

-IC = 200A, VD = 15V, V
VD = 15V , V

VD = 15V , V

VD = 15V , V

VCC = 300V, IC = 200A — 0.4 1.0 µs

, Tj = 25°C——1mA

CES

, Tj = 125°C——10mA

CES

= 5V — 1.9 2.8 Volts

CIN

= 0V, IC = 200A — 1.8 2.6 Volts

CIN

= 0V, IC = 200A, — 1.9 2.7 Volts

CIN

Tj = 125°C

0.5 1.4 2.5 µs

= 0 ↔ 5V — 0.15 0.3 µs

CIN

Tj = 125°C — 2.0 3.0 µs

— 0.5 1.0 µs

Thermal Characteristics

Characteristic Symbol Condition Min. Typ. Max. Units
Junction to Case Thermal Resistance R

Contact Thermal Resistance R

th(j-c)Q

R

th(j-c)F

th(c-f)

Each IGBT — — 0.21 °C/Watt
Each FWDi — — 0.35 °C/Watt

Case to Fin Per Module, — — 0.060 °C/Watt

Thermal Grease Applied

Recommended Conditions for Use

Characteristic Symbol Condition Value Units
Supply Voltage V

Input ON Voltage V
Input OFF Voltage V
PWM Input Frequency f
Minimum Dead Time t

CC

V

D
CIN(on)
CIN(off)

PWM

dead

Applied across C1-E2 Terminals 0 ~ 400 Volts

Applied between VP1-VPC, VN1-V

Applied between 0 ~ 0.8 Volts

CP1-VPC, CN1-V

Using Application Circuit 5 ~ 20 kHz

Input Signal ≥ 3.5 µs

NC

NC

15 ± 1.5 Volts

4.0 ~ V

SXR

Volts

Sep.1998

MITSUBISHI INTELLIGENT POWER MODULES

PM200DSA060

FLA T-BASE TYPE

INSULA TED PACKAGE

SATURATION VOLTAGE

CHARACTERISTICS (TYPICAL)

3

VD = 15V

= 0V

V

CIN

T

= 25oC

j

= 125oC

T

, (VOLTS)

2

CE(sat)

j

1

SATURATION VOLTAGE V

0

0 100 300200

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING TIME VS.

COLLECTOR CURRENT (TYPICAL)

1

10

VCC = 300V

= 15V

V

D

Inductive Load

T

= 25oC

j

, (µs)

off

, t

on

0

10

SWITCHING TIMES, t

-1

10

3

10

, (AMPERES)

C

2

10

COLLECTOR REVERSE CURRENT, -I

1

10

T

= 125oC

j

1

10

DIODE FORWARD CHARACTERISTICS

V

= 15V

D

= 15V

V

CIN

Tj = 25oC

= 125oC

T

j

0.4 01.2 2.4

0.8 1.6 2.0

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

t

off

t

on

2

10

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS (TYPICAL)

3

2

, (VOLTS)

CE(sat)

V

1

IC = 200A
V

= 0V

CIN

T

= 25oC

j

= 125oC

COLLECTOR-EMITTER SATURATION VOLTAGE

0

0

SUPPLY VOLTAGE, VD, (VOLTS)

SWITCHING TIME VS.

COLLECTOR CURRENT (TYPICAL)

1

10

VCC = 300V

= 15V

V

D

Inductive Load

, (µs)

c(off)

3

, t

c(on)

0

10

SWITCHING TIMES, t

-1

10

1

10

10

120

T

o

= 25

T

C

j

o

= 125

C

T

j

10

COLLECTOR CURRENT, IC, (AMPERES)COLLECTOR CURRENT, IC, (AMPERES)

OVER CURRENT TRIP LEVEL VS.

SUPPLY VOLTAGE (TYPICAL)

o

= 25

C

j

T

j

20

2218161412

t

c(off)

t

c(on)

2

3

10

100

300

200

, (AMPERES)

C

100

COLLECTOR CURRENT, I

10

, (µs)

rr

10

REVERSE RECOVERY TIME, t

10

120

100

OUTPUT CHARACTERISTICS

(TYPICAL)

Tj = 25oC

= 15V

V

CIN

VD = 17V

0

012

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

REVERSE RECOVERY CURRENT VS.

COLLECTOR CURRENT (TYPICAL)

0

I

rr

t

-1

-2

10

rr

VCC = 300V

= 15V

V

D

Inductive Load

T

j

= 125oC

T

j

1

COLLECTOR REVERSE CURRENT, -IC, (AMPERES)

OVER CURRENT TRIP LEVEL

TEMPERATURE DEPENDENCY (TYPICAL)

= 15V

V

D

2

10

15

= 25oC

13

3

2

10

1

10

0

10

3

10

, (AMPERES)

rr

REVERSE RECOVERY CURRENT, I

80

60

40

80

60

20

10

OVER CURRENT TRIP LEVEL % (NORMALIZED)

0

12 14 16 18 20

SUPPLY VOLTAGE, VD, (VOLTS)

40

OVER CURRENT TRIP LEVEL % (NORMALIZED)

0

0 50 100 150-50

JUNCTION TEMPERATURE, Tj, (oC)

Sep.1998

MITSUBISHI INTELLIGENT POWER MODULES

PM200DSA060

FLA T-BASE TYPE

INSULA TED PACKAGE

FAULT OUTPUT PULSE WIDTH VS.

TEMPERATURE (TYPICAL)

120

= 15V

V

D

100

80

60

40

FAULT OUTPUT PULSE WIDTH % (NORMALIZED)

0

-50 0 50 100 150

JUNCTION TEMPERATURE, Tj, (oC)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

10

(Each FWDi)

-2

-1

10

TIME, (s)

th(j-c)F

1

10

0

10

, (NORMALIZED VALUE)

-1

th(j-c)

10

-2

10

SINGLE PULSE
STANDARD VALUE = R

-3

10

TRANSIENT IMPEDANCE, Z

-3

10

= 0.35oC/W

0

10

CONTROL SUPPLY VOLTAGE TRIP-RESET

LEVEL TEMPERATURE DEPENDENCY

15

14

13

, (VOLTS)

r

, UV

t

12

UV

UV TRIP-RESET LEVEL,

11

0

1

10

(TYPICAL)

UV

t

UV

r

-50 150050100

JUNCTION TEMPERATURE, Tj, (oC)

1

10

0

10

, (NORMALIZED VALUE)

-1

th(j-c)

10

-2

10

-3

10

TRANSIENT IMPEDANCE, Z

10

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(Each IGBT)

SINGLE PULSE
STANDARD VALUE = R

-2

-3

10

-1

10

TIME, (s)

th(j-c)Q

= 0.21oC/W

0

10

1

10

Sep.1998