MITSUBISHI PM150RLA120 Technical data
PM150RLA120
MITSUBISHI <INTELLIGENT POWER MODULES>
PM150RLA120
FLAT-BASE TYPE
INSULATED PACKAGE
FEATURE
a) Adopting new 5th generation IGBT (CSTBT) chip, which
performance is improved by 1µm fine rule process.
For example, typical V
b) I adopt the over-temperature conservation by Tj detection of
CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM.
c) Current rating of brake part increased.
50% for the current rating of inverter part.
•3φ 150A, 1200V Current-sense IGBT type inverter
• 75A, 1200V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-Fo available
from upper arm devices)
• Acoustic noise-less 30kW class inverter application
• UL Recognized Yellow Card No.E80276(N)
ce(sat)=1.9V @Tj=125°C
File No.E80271
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES Dimensions in mm
135
6-M5 Nuts
13
4-φ5.5
Mounting Holes
6.05 6.05
26 26 40.5 11.7
10.5
6
18
11
WVU
6-2 3-2
10
19
2-φ2.5
110±
10.5
71.5
66.5
13
19- 0.5
0.5
10.5 13
3-2 3-2
10 103.25
9 5 1
3.25
30.15 11
13(Screwing Depth)
6
18.7
6.056.05
B
10.5
N
10.510.5
P
20 20 21.5
16.5
110
±0.5
78
4
LABEL
+1
-0.5
24.1
33.6
Terminal code
34.7
1. VUPC
2. UFO
3. UP
4. VUP1
5. VVPC
6. VFO
7. VP
8. VVP1
9. VWPC
10. WFO
11. WP
12. VWP1
13. VNC
14. VN1
15. Br
16. UN
17. VN
18. WN
19. Fo
May 2005
INTERNAL FUNCTIONS BLOCK DIAGRAM
V
Br
Fo
V
NC
V
N1
W
N
N
MITSUBISHI <INTELLIGENT POWER MODULES>
PM150RLA120
FLAT-BASE TYPE
INSULATED PACKAGE
WPV
U
N
V
WPC
WF
WP1
O
V
VPC
VPV
VF
VP1
O
V
UPC
UPV
UF
UP1
O
1.5k
Gnd In Fo Vcc
Gnd Si Out OT
Gnd In Fo Vcc
Gnd Si Out OT
BNWVUP
Gnd In Fo Vcc
Gnd Si Out OT
Gnd In Fo Vcc
Gnd Si Out OT
1.5k
Gnd In Fo Vcc
Gnd Si Out OT
1.5k 1.5k
Gnd In Fo Vcc
Gnd Si Out OT
Gnd In Fo Vcc
Gnd Si Out OT
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol Parameter Condition Ratings Unit
VCES
±IC
±ICP
PC
Tj
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature
D = 15V, VCIN = 15V
V
C = 25°C
T
T
C = 25°C
C = 25°C (Note-1)
T
1200
150
300
1041
–20 ~ +150
V
A
A
W
°C
BRAKE PART
Symbol Parameter Condition Ratings Unit
VCES
IC
ICP
PC
VR(DC)
IF
Tj
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
FWDi Rated DC Reverse Voltage
FWDi Forward Current
Junction Temperature
V
D = 15V, VCIN = 15V
C = 25°C
T
T
C = 25°C
C = 25°C (Note-1)
T
T
C = 25°C
C = 25°C
T
1200
75
150
595
1200
75
–20 ~ +150
CONTROL PART
Symbol Parameter Condition Ratings Unit
VD
VCIN
FO
V
IFO
Supply Voltage
Input Voltage
Fault Output Supply Voltage
Fault Output Current
Applied between : V
Applied between : UP-VUPC, VP-VVPC
Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC
Sink current at UFO, VFO, WFO, FO terminals
UP1-VUPC
VVP1-VVPC, VWP1-VWPC, VN1-VNC
WP-VWPC, UN • VN • WN • Br-VNC
FO-VNC
20
20
20
20
May 2005
V
A
A
W
V
A
°C
V
V
V
mA
TOTAL SYSTEM
CC(PROT)
V
CC(surge)
V
Tstg
Viso
ParameterSymbol
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Storage Temperature
Isolation Voltage
V
D = 13.5 ~ 16.5V, Inverter Part,
T
j = +125°C Start
Applied between : P-N, Surge value
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
Condition
THERMAL RESISTANCES
Symbol
Rth(j-c)Q
Rth(j-c)F
Rth(j-c)Q
Rth(j-c)F
Rth(c-f)
Junction to case Thermal
Resistances
Contact Thermal Resistance
Parameter
Inverter IGBT (per 1 element) (Note-1)
Inverter FWDi (per 1 element) (Note-1)
Brake IGBT (Note-1)
Brake FWDi (Note-1)
Case to fin, (per 1 module)
Thermal grease applied (Note-1)
* If you use this value, Rth(f-a) should be measured just under the chips.
Condition
MITSUBISHI <INTELLIGENT POWER MODULES>
PM150RLA120
FLAT-BASE TYPE
INSULATED PACKAGE
Min.
—
—
—
—
—
Ratings
800
1000
–40 ~ +125
2500
Limits
Typ. Max.
—
—
—
—
—
0.12*
0.20*
0.21*
0.31*
0.023
Unit
V
V
°C
rms
V
Unit
°C/W
(Note-1) Tc (under the chip) measurement point is below.
arm
axis
X
Y
IGBT
23.0
56.3
UP
FWDi
23.0
43.1
VP WP UN WN
IGBT
FWDi
IGBT
FWDi
IGBT
FWDi
57.5
56.5
87.5
86.5
37.0
38.0
56.3
43.1
56.3
43.1
29.1
42.4
Bottom view
Y
X
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
= 15V
Condition
(Fig. 5)
Symbol
V
CE(sat)
VEC
ton
trr
tc(on)
toff
tc(off)
ICES
Parameter
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Switching Time
Collector-Emitter
Cutoff Current
D = 15V, IC = 150A
V
V
CIN = 0V (Fig. 1)
C = 150A, VD = 15V, VCIN = 15V (Fig. 2)
–I
D = 15V, VCIN = 0V↔15V
V
V
CC = 600V, IC = 150A
j = 125°C
T
Inductive Load (Fig. 3, 4)
VCE = V
CES
, V
CIN
IGBT
70.5
29.1
VN
FWDi
71.5
42.4
j = 25°C
T
j = 125°C
T
T
j = 25°C
j = 125°C
T
IGBT
FWDi
100.5
101.5
29.1
42.4
Min. Typ. Max.
—
—
—
0.5
—
—
—
—
—
—
IGBT
11.0
26.8
Limits
1.8
1.9
2.5
1.0
0.5
0.4
2.0
0.7
—
—
Unit : mm
Br
FWDi
8.0
61.0
2.3
2.4
3.5
2.5
0.8
1.0
3.0
1.2
10
Unit
V
V
µs
1
mA
May 2005
Loading...