MITSUBISHI PM100RSE120 Technical data

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MITSUBISHI <INTELLIGENT POWER MODULES>

MITSUBISHI <INTELLIGENT POWER MODULES>

PM100RSE120

PM100RSE120

APPLICATION

General purpose inverter, servo drives and other motor controls

FEATURE

a) Adopting new 4th generation planar IGBT chip, which per-

formance is improved by 1µm fine rule process.

b) Using new Diode which is designed to get soft reverse

recovery characteristics.

•3φ 100A, 1200V Current-sense IGBT for 15kHz switching

• 50A, 1200V Current-sense regenerative brake IGBT

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for over­current, short-circuit, over-temperature & under-voltage

• Acoustic noise-less 18.5/22kW class inverter application

PM100RSE120

FLAT-BASE TYPE

FLAT-BASE TYPE

INSULATED PACKAGE

INSULATED PACKAGE

PACKAGE OUTLINES Dimensions in mm

135

±1

120.5

±0.5

LABEL

123 456 789 10111213141516

10.16 10.16 10.16

2-2.54 6-2.54

67.4

74.4

10.5

U

VW

13

26

26

2-φ2.54

16- 0.64

P N B PPS

39.7

3.22

2-2.54 2-2.54

51.5

A

0.5

±0.3

16.5

202039.5

+1.0

24.1 –0.5
4

MOUNTING
HOLES

11

4-R6

6-M5 NUTS

4- φ5.5

95.5 ±0.5

21.3

110 ±1

33.7

34.7

24.1

Screwing depth
Min9.0

Terminal code

1. V

UPC

2. U

P

3. V

UP1

4. V

VPC

5. V

P

6. V

VP1

7. V

WPC

8. W

P

9. V

WP1

10. V

NC

φ2.54

2-2.54

3.22

11.6

A : DETAIL

11. V

12. B

13. U

14. V

15. W

16. F

0.64

N1

r

N

N

N

O

5

10.6

Sep. 2001

INTERNAL FUNCTIONS BLOCK DIAGRAM

MITSUBISHI <INTELLIGENT POWER MODULES>

PM100RSE120

FLAT-BASE TYPE

INSULATED PACKAGE

Rfo=1.5kΩ

Br Fo

Gnd In Fo Vcc

Gnd

Si Out

V

Rfo

WNV

NC

Gnd In Fo Vcc

Gnd

Si Out

N1

V

Gnd In Fo Vcc

Gnd

N

TEMP

Si Out

U

Gnd In Fo Vcc

Gnd

Th

N

Si Out

WPV

V

WPC

Gnd In Vcc

Gnd

Si Out

WP1

V

VPC

Gnd In Vcc

Gnd

VPV

VP1

V

UPC

Gnd In Vcc

Si Out

Gnd

U

P

Si Out

V

UP1

BNWVPU

MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART

Symbol Parameter Condition Ratings Unit

VCES

±IC
±ICP

PC
Tj

Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature

D = 15V, VCIN = 15V

V

C = 25°C

T
T

C = 25°C
C = 25°C

T

1200

100
200
595

–20 ~ +150

V
A

A
W
°C

BRAKE PART

Symbol Parameter Condition Ratings Unit
VCES
IC
ICP
PC
VR(DC)
IF
Tj

Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
FWDi Rated DC Reverse Voltage
FWDi Forward Current
Junction Temperature

V

D = 15V, VCIN = 15V
C = 25°C

T
T

C = 25°C
C = 25°C

T
T

C = 25°C
C = 25°C

T

1200

50
100
416

1200

15

–20 ~ +150

CONTROL PART

Symbol Parameter Condition Ratings Unit

VD

VCIN

FO

V
IFO

Supply Voltage

Input Voltage

Fault Output Supply Voltage
Fault Output Current

Applied between : V

Applied between : UP-VUPC, VP-VVPC

Applied between : FO-VNC
Sink current at FO terminal

UP1-VUPC

VVP1-VVPC, VWP1-VWPC, VN1-VNC

WP-VWPC, UN • VN • WN • Br-VNC

20

20

20

20

Sep. 2001

V
A
A

W

V
A

°C

V

V

V

mA