Datasheet PM100DSA120 Datasheet (Mitsubishi)

MITSUBISHI INTELLIGENT POWER MODULES

PM100DSA120

FLA T-BASE TYPE

INSULA TED PACKAGE

A
B

L

C2E1 E2 C1

C

Q - DIA.
(2 TYP.)

R - M5 THD.
(3 TYP.)

E

F

VP1

FPO
SPR
CP1
VPC

VN1

FNO
SNR
CN1
VNC

FO
SR
IN

FO
SR
IN

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.33 110.0
B 3.66±0.010 93.0±0.25
C 1.77 45.0
D 1.34 34.0
E 1.14 +0.04/-0.02 29.0 +1/-0.5
F 1.02 26.0
G 0.98 25.0
H 0.702 17.84

J 0.55 14.0

K 0.51 13.0

VCC

GND

VCC

GND

TEMP
OUT1
OUT2
SENS
SINK

TEMP
OUT1
OUT2
SENS
SINK

GGG

U

1

N

21345

2345

P

H

S

S

S

S

M

T - DIA.
(4 TYP.)

D

P

0.64 MM SQ. PIN
(10 TYP.)

K

N

C1

C2E1

E2

N SIDE P SIDE

VN1

1.
SNR

2.
CN1

3.
VNC

4.
FNO

5.

Dimensions Inches Millimeters

L 0.47 12.0
M 0.33 8.5
N 0.28 7.0
P 0.230 5.84
Q 0.22 Dia. Dia. 5.5
R M5 Metric M5
S 0.100 2.54

T 0.08 Dia. Dia. 2.0
U 0.08 2.0

VP1

1.
SPR

2.
CP1

3.
VPC

4.
FPO

5.

Description:

J

Mitsubishi Intelligent Power Mod­ules are isolated base modules de­signed for power switching applica­tions operating at frequencies to
20kHz. Built-in control circuits pro­vide optimum gate drive and pro­tection for the IGBT and free-wheel
diode power devices.

Features:

u Complete Output Power

Circuit

u Gate Drive Circuit
u Protection Logic

– Short Circuit
– Over Current
– Over T emperature
– Under Voltage

Applications:

u Inverters
u UPS
u Motion/Servo Control
u Power Supplies

Ordering Information:

Example: Select the complete
part number from the table below

-i.e. PM100DSA120 is a 1200V,
100 Ampere Intelligent Power Mod­ule.

Type Current Rating V

Amperes Volts (x 10)

PM 100 120

CES

Sep.1998

MITSUBISHI INTELLIGENT POWER MODULES

PM100DSA120

FLA T-BASE TYPE

INSULA TED P ACKAGE

Absolute Maximum Ratings, Tj = 25°C unless otherwise specified

Ratings Symbol PM100DSA120 Units
Power Device Junction Temperature T
Storage T emperature T
Case Operating Temperature T
Mounting Torque, M5 Mounting Screws — 2.5~3.5 N · m
Mounting Torque, M5 Main Terminal Screws — 2.5~3.5 N · m
Module Weight (Typical) — 340 Grams
Supply Voltage Protected by OC and SC (VD = 13.5 - 16.5V, Inverter Part) V
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

j

stg

C

CC(prot.)

iso

Control Sector

Supply Voltage (Applied between VP1-VPC, VN1-VNC)V
Input Voltage (Applied between CP1-VPC, CN1-VNC)V
Fault Output Supply Voltage (Applied between Fpo-Vpc and Fno-Vnc)VFO20 Volts
Fault Output Current (Sink Current at FPO, FNO Terminal) I

D

CIN

FO

-20 to 150 °C

-40 to 125 °C

-20 to 100 °C

800 Volts

2500 Vrms

20 Volts
10 Volts

20 mA

IGBT Inverter Sector

Collector-Emitter Voltage (VD = 15V, V
Collector Current, (Tc = 25°C) I
Peak Collector Current, (Tc = 25°C) I
Supply Voltage (Applied between C1 - E2) V
Supply Voltage, Surge (Applied between C1 - E2) V
Collector Dissipation P

= 5V) V

CIN

CC(surge)

CES

C

CP

CC

C

1200 Volts

100 Amperes
200 Amperes
900 Volts

1000 Volts

595 Watts

Sep.1998

MITSUBISHI INTELLIGENT POWER MODULES

PM100DSA120

FLA T-BASE TYPE

INSULA TED PACKAGE

Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Control Sector

Over Current Trip Level Inverter Part OC -20°C ≤ T ≤ 125°C, VD = 15V 145 230 — Amperes
Short Circuit Trip Level Inverter Part SC -20°C ≤ T ≤ 125°C, VD = 15V 200 340 — Amperes
Over Current Delay Time t
Over T emperature Protection OT Trip Level 100 110 120 °C

Supply Circuit Under Voltage Protection UV Trip Level 11.5 12.0 12.5 Volts

Supply Voltage V
Circuit Current I

Input ON Threshold Voltage V
Input OFF Threshold Voltage V
PWM Input Frequency f
Fault Output Current I

Minimum Fault Output Pulse Width t
SXR Terminal Output Voltage V

off(OC)

OT

r

UV

r

D

D

th(on)
th(off)

PWM

FO(H)

I

FO(L)

FO

SXR

Applied between VP1-VPC, VN1-V

VD = 15V, V

V

= 15V, V

D

-20°C ≤ Tj ≤125°C, Rin = 6.8 kΩ (SPR, SNR) 4.5 5.1 5.6 Volts

VD = 15V — 5 — µs

Reset Level 85 95 105 °C

Reset Level — 12.5 — Volts

13.5 15 16.5 Volts

NC

= 5V, VN1-V

CIN

= 5V , V

CIN

Applied between 1.2 1.5 1.8 Volts

CP1-VPC, CN1-V

3-φ Sinusoidal — 15 20 kHz
VD = 15V, VFO = 15V — — 0.01 mA
VD = 15V, VFO = 15V — 10 15 mA

VD = 15V 1.0 1.8 — ms

NC

XP1-VXPC

NC

—1926mA
—1926mA

1.7 2.0 2.3 Volts

Sep.1998

MITSUBISHI INTELLIGENT POWER MODULES

PM100DSA120

FLA T-BASE TYPE

INSULA TED PACKAGE

Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

IGBT Inverter Sector

Collector Cutoff Current I

Emitter-Collector Voltage V
Collector-Emitter Saturation Voltage V

Inductive Load Switching Times t

t

t

CES

EC

CE(sat)

on

t

rr

C(on)

t

off

C(off)

VCE = V

V

= V

CE

-IC = 100A, VD = 15V, V
VD = 15V, V

VD = 15V, V

VD = 15V, V

VCC = 600V, IC = 100A — 0.4 1.0 µs

, Tj = 25°C——1mA

CEX

, Tj = 125°C——10mA

CEX

= 5V — 2.5 3.5 Volts

CIN

= 0V, IC = 100A — 2.3 3.2 Volts

CIN

= 0V, IC = 100A, — 2.1 2.9 Volts

CIN

Tj = 125°C

0.5 1.4 2.5 µs

= 0 ↔ 5V — 0.2 0.4 µs

CIN

Tj = 125°C — 2.5 3.5 µs

— 0.6 1.1 µs

Thermal Characteristics

Characteristic Symbol Condition Min. Typ. Max. Units
Junction to Case Thermal Resistance R

Contact Thermal Resistance R

th(j-c)Q

R

th(j-c)F

th(c-f)

Each IGBT — — 0.21 °C/Watt

Each FWDi — — 0.35 °C/Watt
Case to Fin Per Module, — — 0.060 °C/Watt
Thermal Grease Applied

Recommended Conditions for Use

Characteristic Symbol Condition Value Units
Supply Voltage V

Input ON Voltage V
Input OFF Voltage V
PWM Input Frequency f
Minimum Dead Time t

CC

V

D
CIN(on)
CIN(off)

PWM

dead

Applied across C1-E2 Terminals 0 ~ 800 Volts

Applied between VP1-VPC, VN1-V

Applied between 0 ~ 0.8 Volts

CP1-VPC, CN1-V

Using Application Circuit 5 ~ 20 kHz

Input Signal ≥ 3.5 µs

NC

NC

15 ± 1.5 Volts

4.0 ~ V

SXR

Volts

Sep.1998

MITSUBISHI INTELLIGENT POWER MODULES

PM100DSA120

FLA T-BASE TYPE

INSULA TED PACKAGE

SATURATION VOLTAGE

CHARACTERISTICS (TYPICAL)

3

VD = 15V

= 0V

V

CIN

= 25oC

T

j

= 125oC

T

, (VOLTS)

2

CE(sat)

j

1

SATURATION VOLTAGE V

0

0 12040 80

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING TIME VS.

COLLECTOR CURRENT (TYPICAL)

1

10

, (µs)

off

, t

on

0

10

SWITCHING TIMES, t

-1

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

DIODE FORWARD CHARACTERISTICS

2

10

V

= 15V

D

= 5V

V

CIN

Tj = 25oC

= 125oC

T

, (AMPERES)

C

1

10

j

10

t

off

t

on

VCC = 600V
V

Inductive Load

2

= 15V

D

T

= 25oC

j

T

= 125oC

j

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS (TYPICAL)

3

120

100

2

, (VOLTS)

CE(sat)

V

1

COLLECTOR-EMITTER SATURATION VOLTAGE

0

12 14 16 18 20

0

SUPPLY VOLTAGE, VD, (VOLTS)

SWITCHING TIME VS.

COLLECTOR CURRENT (TYPICAL)

1

10

VCC = 600V

= 15V

V

D

Inductive Load

, (µs)

c(off)

, t

c(on)

0

10

SWITCHING TIMES, t

-1

10

3

10

1

10

120

T

o

= 25

T

C

j

o

= 125

C

T

j

COLLECTOR CURRENT, IC, (AMPERES)

OVER CURRENT TRIP LEVEL VS.

SUPPLY VOLTAGE (TYPICAL)

o

= 25

C

j

VD = 15V

= 0V

V

CIN

T

= 25oC

j

= 125oC

T

j

t

c(off)

t

c(on)

2

10

3

10

110

100

90

80

, (AMPERES)

C

60

40

20

COLLECTOR CURRENT, I

10

, (µs)

rr

-1

10

REVERSE RECOVERY TIME, t

-2

10

120

110

100

90

OUTPUT CHARACTERISTICS

(TYPICAL)

Tj = 25oC

= 0V

V

CIN

VD = 17V

13

0

012

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

REVERSE RECOVERY CURRENT VS.

COLLECTOR CURRENT (TYPICAL)

0

Irr

trr

VCC = 600V

= 15V

V

D

Inductive Load

T

= 25oC

j

= 125oC

T

j

1

10

COLLECTOR REVERSE CURRENT, -IC, (AMPERES)

OVER CURRENT TRIP LEVEL

TEMPERATURE DEPENDENCY (TYPICAL)

2

10

15

3

2

10

, (AMPERES)

rr

1

10

REVERSE RECOVERY CURRENT, I

0

10

3

10

COLLECTOR REVERSE CURRENT, -I

0

10

001.0 2.5

0.5 1.5 2.0

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

80

OVER CURRENT TRIP LEVEL % (NORMALIZED)

0

12 14 16 18 20

SUPPLY VOLTAGE, VD, (VOLTS)

80

OVER CURRENT TRIP LEVEL % (NORMALIZED)

0

0 50 100 150-50

JUNCTION TEMPERATURE, Tj, (oC)

V

D

= 15V

Sep.1998

MITSUBISHI INTELLIGENT POWER MODULES

PM100DSA120

FLA T-BASE TYPE

INSULA TED PACKAGE

FAULT OUTPUT PULSE WIDTH VS.

TEMPERATURE (TYPICAL)

120

= 15V

V

D

100

80

60

40

FAULT OUTPUT PULSE WIDTH % (NORMALIZED)

00

-50 0 50 100 150

JUNCTION TEMPERATURE, Tj, (oC)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

10

(Each FWDi)

-2

-1

10

TIME, (s)

th(j-c)D

= 0.35oC/W

0

10

1

10

1

10

0

10

, (NORMALIZED VALUE)

-1

th(j-c)

10

-2

10

SINGLE PULSE
STANDARD VALUE = R

-3

10

TRANSIENT IMPEDANCE, Z

-3

10

CONTROL SUPPLY VOLTAGE TRIP-RESET

LEVEL TEMPERATURE DEPENDENCY

(TYPICAL)

15

UV

t

UV

14

r

13

, (VOLTS)

r

, UV

t

12

UV

UV TRIP-RESET LEVEL,

11

-50 150050100

JUNCTION TEMPERATURE, Tj, (oC)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

1

10

0

10

, (NORMALIZED VALUE)

-1

th(j-c)

10

-2

10

SINGLE PULSE
STANDARD VALUE = R

-3

10

TRANSIENT IMPEDANCE, Z

10

-2

-3

10

(Each IGBT)

-1

10

TIME, (s)

th(j-c)Q

= 0.21oC/W

0

10

1

10

Sep.1998