Mitsubishi MH32S72BBFA-8, MH32S72BBFA-7 Datasheet
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
DESCRIPTION
APPLICATION
FEATURES
Type name
100MHz
6ns
6ns
MH32S72BBFA-8
MH32S72BBFA-7
TSOP package , industry standard Resister in TSSOP package ,
Frequency
(CL = 4)
100MHz
The MH32S72BBFA is 33554432 - word x 72-bit
Synchronous DRAM stacked structural module. This
consist of thirty-six industry standard 16M x 4
Synchronous DRAMs in TSOP.
The stacked structure of TSOP on a card edge dual inline package provides any application where high
densities and large of quantities memory are required.
This is a socket-type memory module ,suitable for
easy interchange or addition of module.
MITSUBISHI LSIs
MH32S72BBFA -7,-8
85pin
1pin
CLK
Max.
Utilizes industry standard 16M X 4 Synchronous DRAMs in
and industry standard PLL in TSSOP package.
Single 3.3V +/- 0.3V supply
Burst length 1/2/4/8/Full Page (programmable)
Burst type sequential / interleave (programmable)
Column access random
Burst Write / Single Write (programmable)
Auto precharge / Auto bank precharge controlled by A10
Auto refresh and Self refresh
LVTTL Interface
4096 refresh cycles every 64ms
Intel specifiation(rev. 1.2)compliant PCB and SPD 1.2A
Access Time
[latch mode]
94pin
95pin
124pin
125pin
10pin
11pin
40pin
41pin
Main memory unit for computers, Microcomputer memory.
MIT-DS-331-0.0
MITSUBISHI
ELECTRIC
168pin
84pin
16/Jun. /1999
1
MITSUBISHI LSIs
MH32S72BBFA -7,-8
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
PIN NO. PIN NAME PIN NO. PIN NAME PIN NO. PIN NAME PIN NO. PIN NAME
1
2 DQ0 44 NC
3 DQ1 45 /S2
4 DQ2 46 DQMB2
5 DQ3 47 DQMB3
6 VDD 48 NC
7 DQ4 49 VDD
8 DQ5 50 NC
9 DQ6 51 NC
10 DQ7 52
11 DQ8 53
12
13 DQ9 55 DQ16
14 DQ10 56 DQ17
15 DQ11 57 DQ18
16 DQ12 58 DQ19
17 DQ13 59 VDD
18 VDD 60 DQ20
19 DQ14 61 NC
20 DQ15 62 NC
21
22
23 VSS 65 DQ21
24 NC 66 DQ22
25 NC 67 DQ23
26 VDD 68
27
28 DQMB0 70 DQ25
29 DQMB1 71 DQ26
30 /S0 72 DQ27
31 NC 73 VDD
32 VSS 74 DQ28
33 A0 75 DQ29
34 A2 76 DQ30
35 A4 77 DQ31
36 A6 78 VSS
37 A8 79
38
39
40 VDD 82 SDA
41 VDD 83 SCL
42 CK0 84 VDD
VSS
VSS
CB0
CB1
/WE0
A10
BA1
43
54 VSS
63
64 VSS
69 DQ24
80 NC
81
VSS 85
86
87
88
89
90
91
92
93
CB2
CB3
NC
VSS 110
CK2
WP
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
VSS 127
DQ32 128
DQ33 129
DQ34 130 DQMB6
DQ35 131 DQMB7
VDD 132
DQ36 133 VDD
DQ37 134 NC
DQ38 135 NC
DQ39 136
DQ40 137
VSS 138 VSS
DQ41 139 DQ48
DQ42 140 DQ49
DQ43 141 DQ50
DQ44 142 DQ51
DQ45 143 VDD
VDD 144 DQ52
DQ46 145 NC
DQ47 146
CB4
CB5
VSS 149 DQ53
NC 150 DQ54
NC 151 DQ55
VDD 152 VSS
/CAS 153 DQ56
DQMB4 154 DQ57
DQMB5 155 DQ58
/S1
/RAS 157 VDD
VSS 158 DQ60
A1 159 DQ61
A3 160 DQ62
A5 161 DQ63
A7 162 VSS
A9 163
BA0
A11
VDD 166 SA1
CK1 167 SA2
NC
147
148 VSS
156 DQ59
164 NC
165 SA0
168 VDD
VSS
CKE0
/S3
NC
CB6
CB7
NC
REGE
CK3
NC = No Connection
MIT-DS-331-0.0
MITSUBISHI
ELECTRIC
16/Jun. /1999
2
Add
D18
D19D0D1
D2
D20
D3
D21
D4
D22
D5
D23D6D24D7D25D8D26
D9
D27
D10
D28
D11
D29
D12
D30
D13
D31
D14
D32
D15
D33
D16
D34
D17
D35
47K
CKE0
/S0-3
DQM0-7
/W
/RAS
/CAS
REGE
Vdd
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
MITSUBISHI LSIs
MH32S72BBFA -7,-8
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
RCKE0
R/S0-3
RDQM0-7
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
CB0
CB1
CB2
CB3
From PLL
CK0
CK1 - CK3
RCKE0
R/S0
R/S1
R/S2
R/S3
MIT-DS-331-0.0
PLL
Terminated
D0-35
D0-3,D8-12,D17
D18-21,D26-30,D35
D4-7,D13-16
D22-25,D31-34
RDQM 0
RDQM 1
RDQM 2
RDQM 3
RDQM 4
RDQM 5
RDQM 6
RDQM 7
CB4
CB5
CB6
CB7
D0-1,D18-19
D2-3,D8,D20-21,D26
D4-5,D22-23
D6-7,D24-25
D9-10,D27-28
D11-12,D17,D29-30,D35
D13-14,D31-32
D15-16,D33-34
MITSUBISHI
ELECTRIC
SCL
WP
SERIAL PD
A0 A1 A2
SA0 SA1 SA2
VDD
VSS
SDA
D0 to D35
D0 to D35
16/Jun. /1999
3
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Combination of /RAS,/CAS,/W defines basic commands.
the bank to which a command is applied.BA must be set
Power Supply
Register enable:When REGE is low,All control signals and
PIN FUNCTION
MITSUBISHI LSIs
MH32S72BBFA -7,-8
CK0
CKE0
/S0 - 3
/RAS,/CAS,/W
A0-11
Input
Input
Input
Input
Input
Master Clock:All other inputs are referenced to the rising
edge of CK
Clock Enable:CKE controls internal clock.When CKE is
low,internal clock for the following cycle is ceased. CKE is
also used to select auto / self refresh. After self refresh
mode is started, CKE E becomes asynchronous input.Self
refresh is maintained as long as CKE is low.
Chip Select: When /S is high,any command means
No Operation.
A0-11 specify the Row/Column Address in conjunction with
BA.The Row Address is specified by A0-11.The Column
Address is specified by A0-9.A10 is also used to indicate
precharge option.When A10 is high at a read / write
command, an auto precharge is performed. When A10 is
BA0-1
DQ0-63
CB0-7
DQM0-7
Vdd,Vss
REGE
Input
Input/Output
Input
Output
high at a precharge command, both banks are precharged.
Bank Address:BA0,1 is not simply BA.BA0,1 specifies
with ACT,PRE,READ,WRITE commands
Data In and Data out are referenced to the rising edge
of CK
Din Mask/Output Disable:When DQMB is high in burst
write.Din for the current cycle is masked.When DQMB is
high in burst read,Dout is disabled at the next but one cycle.
Power Supply for the memory mounted module.
address are buffered. (Buffer mode) When REGE is
high,All control and address are latched. (Latch mode)
MIT-DS-331-0.0
MITSUBISHI
ELECTRIC
16/Jun. /1999
4
MITSUBISHI LSIs
Each command is defined by control signals of /RAS,/CAS and /WE at CK rising edge. In
READ command starts burst read from the active bank indicated by BA.First output
MH32S72BBFA -7,-8
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
BASIC FUNCTIONS
The MH32S72BBFA provides basic functions,bank(row)activate,burst read / write,
bank(row)precharge,and auto / self refresh.
addition to 3 signals,/S,CKE and A10 are used as chip select,refresh option,and
precharge option,respectively.
To know the detailed definition of commands please see the command truth table.
CK
/S
/RAS
/CAS
/WE
CKE
A10
Chip Select : L=select, H=deselect
Command
Command
Command
Refresh Option @refresh command
Precharge Option @precharge or read/write command
define basic commands
Activate(ACT) [/RAS =L, /CAS = /WE =H]
ACT command activates a row in an idle bank indicated by BA.
Read(READ) [/RAS =H,/CAS =L, /WE =H]
data appears after /CAS latency. When A10 =H at this command,the bank is
deactivated after the burst read(auto-precharge,READA).
Write(WRITE) [/RAS =H, /CAS = /WE =L]
WRITE command starts burst write to the active bank indicated by BA. Total data
length to be written is set by burst length. When A10 =H at this command, the bank
is deactivated after the burst write(auto-precharge,WRITEA).
Precharge(PRE) [/RAS =L, /CAS =H,/WE =L]
PRE command deactivates the active bank indicated by BA. This command also
terminates burst read / write operation. When A10 =H at this command, both banks
are deactivated(precharge all, PREA).
Auto-Refresh(REFA) [/RAS =/CAS =L, /WE =CKE =H]
PEFA command starts auto-refresh cycle. Refresh address including bank address
are generated internally. After this command, the banks are precharged automatically.
MIT-DS-331-0.0
16/Jun. /1999
MITSUBISHI
ELECTRIC
5
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
COMMAND TRUTH TABLE
MITSUBISHI LSIs
MH32S72BBFA -7,-8
COMMAND
Deselect
No Operation
Row Address Entry &
Bank Activate
Single Bank Precharge
Precharge All Banks
Column Address Entry
& Write
Column Address Entry
& Write with Auto-
Precharge
Column Address Entry
& Read
Column Address Entry
& Read with Auto-
Precharge
Auto-Refresh
Self-Refresh Entry
Self-Refresh Exit
Burst Terminate
Mode Register Set
MNEMONIC
DESEL
NOP
ACT H
PRE
PREA
WRITE
WRITEA
READ
READA
REFA
REFS
REFSX
TBST
MRS
CKE
n-1
H
H
H
H
H
H
H
H
H
H
L
L
H
H
CKE
n
X
X
X
X
X
X
X
X
X
H
L
H
H
X
X
/CS
H
L
L
L
L
L
L
L
L
L
L
H
L
L
L
/RAS
X
H
L
L
L
H
H
H
H
L
L
X
H
H
L
/CAS
X
H
H
H
H
L
L
L
L
L
L
X
H
H
L
/WE
X
H
H
L
L
L
L
H
H
H
H
X
H
L
L
BA0,1
X
X
V
V
X
V
V
V
V
X
X
X
X
X
L
A11
X
X
V
X
X
X
X
X
X
X
X
X
X
X
L
A10
X
X
V
L
H
L
H
L
H
X
X
X
X
X
L
A0-9
X
X
V
X
X
V
V
V
V
X
X
X
X
X
V*1
H=High Level, L=Low Level, V=Valid, X=Don't Care, n=CLK cycle number
NOTE:
1. A7-A9 =0, A0-A6 =Mode Address
MIT-DS-331-0.0
MITSUBISHI
ELECTRIC
16/Jun. /1999
6
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
FUNCTION TRUTH TABLE
MITSUBISHI LSIs
MH32S72BBFA -7,-8
Current State
IDLE
ROW ACTIVE
READ
/S
/RAS
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
/CAS
X
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
L
/WE
X
H
H
L
H
H
L
L
X
H
H
L
L
H
H
L
L
X
H
H
L
L
H
H
L
L
X
H
L
X
H
L
H
L
X
H
L
H
L
H
L
H
L
X
H
L
H
L
H
L
H
L
Address
X
X
BA
BA,CA,A10
BA,RA
BA,A10
X
Op-Code,
Mode-Add
X
X
BA
BA,CA,A10
BA,CA,A10
BA,RA
BA,A10
X
Op-Code,
Mode-Add
X
X
BA
BA,CA,A10
BA,CA,A10
BA,RA
BA,A10
X
Op-Code,
Mode-Add
Command
DESEL
NOP
TBST
READ/WRITE
ACT
PRE/PREA
REFA
MRS
DESEL
NOP
TBST
READ/READA
WRITE/
WRITEA
ACT
PRE/PREA
REFA
MRS
DESEL
NOP
TBST
READ/READA
WRITE/WRITEA
ACT
PRE/PREA
REFA
MRS
Action
NOP
NOP
ILLEGAL*2
ILLEGAL*2
Bank Active,Latch RA
NOP*4
Auto-Refresh*5
Mode Register Set*5
NOP
NOP
NOP
Begin Read,Latch CA,
Determine Auto-Precharge
Begin Write,Latch CA,
Determine Auto-Precharge
Bank Active/ILLEGAL*2
Precharge/Precharge All
ILLEGAL
ILLEGAL
NOP(Continue Burst to END)
NOP(Continue Burst to END)
Terminate Burst
Terminate Burst,Latch CA,
Begin New Read,Determine
Auto-Precharge*3
Terminate Burst,Latch CA,
Begin Write,Determine AutoPrecharge*3
Bank Active/ILLEGAL*2
Terminate Burst,Precharge
ILLEGAL
ILLEGAL
MIT-DS-331-0.0
MITSUBISHI
ELECTRIC
16/Jun. /1999
7
MH32S72BBFA -7,-8
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
FUNCTION TRUTH TABLE(continued)
MITSUBISHI LSIs
Current State
WRITE
READ with
AUTO
PRECHARGE
WRITE with
AUTO
PRECHARGE
/S
/RAS
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
/CAS
X
H
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
L
/WE
X
H
H
L
L
H
H
L
L
X
H
H
L
L
H
H
L
L
X
H
H
L
L
H
H
L
L
X
H
L
H
L
H
L
H
L
X
H
L
H
L
H
L
H
L
X
H
L
H
L
H
L
H
L
Address
X
X
BA
BA,CA,A10
BA,CA,A10
BA,RA
BA,A10
X
Op-Code,
Mode-Add
X
X
BA
BA,CA,A10
BA,CA,A10
BA,RA
BA,A10
X
Op-Code,
Mode-Add
X
X
BA
BA,CA,A10
BA,CA,A10
BA,RA
BA,A10
X
Op-Code,
Mode-Add
Command
DESEL
NOP
TBST
READ/READA
WRITE/
WRITEA
ACT
PRE/PREA
REFA
MRS
DESEL
NOP
TBST
READ/READA
WRITE/
WRITEA
ACT
PRE/PREA
REFA
MRS
DESEL
NOP
TBST
READ/READA
WRITE/
WRITEA
ACT
PRE/PREA
REFA
MRS
Action
NOP(Continue Burst to END)
NOP(Continue Burst to END)
Terminate Burst
Terminate Burst,Latch CA,
Begin Read,Determine Auto-
Precharge*3
Terminate Burst,Latch CA,
Begin Write,Determine AutoPrecharge*3
Bank Active/ILLEGAL*2
Terminate Burst,Precharge
ILLEGAL
ILLEGAL
NOP(Continue Burst to END)
NOP(Continue Burst to END)
ILLEGAL
ILLEGAL
ILLEGAL
Bank Active/ILLEGAL*2
ILLEGAL*2
ILLEGAL
ILLEGAL
NOP(Continue Burst to END)
NOP(Continue Burst to END)
ILLEGAL
ILLEGAL
ILLEGAL
Bank Active/ILLEGAL*2
ILLEGAL*2
ILLEGAL
ILLEGAL
MIT-DS-331-0.0
MITSUBISHI
ELECTRIC
16/Jun. /1999
8
MH32S72BBFA -7,-8
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
FUNCTION TRUTH TABLE(continued)
MITSUBISHI LSIs
Current State
PRE -
CHARGING
ROW
ACTIVATING
/S
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
/RAS
X
H
H
H
L
L
L
L
X
H
H
H
L
L
L
L
/CAS
X
H
H
L
H
H
L
L
X
H
H
L
H
H
L
L
/WE
X
H
L
X
H
L
H
L
X
H
L
X
H
L
H
L
Address
X
X
BA
BA,CA,A10
BA,RA
BA,A10
X
Op-Code,
Mode-Add
X
X
BA
BA,CA,A10
BA,RA
BA,A10
X
Op-Code,
Mode-Add
Command
DESEL
NOP
TBST
READ/WRITE
ACT
PRE/PREA
REFA
MRS
DESEL
NOP
TBST
READ/WRITE
ACT
PRE/PREA
REFA
MRS
Action
NOP(Idle after tRP)
NOP(Idle after tRP)
ILLEGAL*2
ILLEGAL*2
ILLEGAL*2
NOP*4(Idle after tRP)
ILLEGAL
ILLEGAL
NOP(Row Active after tRCD
NOP(Row Active after tRCD
ILLEGAL*2
ILLEGAL*2
ILLEGAL*2
ILLEGAL*2
ILLEGAL
ILLEGAL
WRITE RE-
COVERING
MIT-DS-331-0.0
H
L
L
L
L
L
L
L
X
H
H
H
L
L
L
L
X
H
H
L
H
H
L
L
X
X
H
X
BA
L
X
BA,CA,A10
BA,RA
H
L
BA,A10
X
H
L
Op-Code,
Mode-Add
DESEL
NOP
TBST
READ/WRITE
ACT
PRE/PREA
REFA
MRS
NOP
NOP
ILLEGAL*2
ILLEGAL*2
ILLEGAL*2
ILLEGAL*2
ILLEGAL
ILLEGAL
16/Jun. /1999
9
MITSUBISHI
ELECTRIC
MH32S72BBFA -7,-8
1. All entries assume that CKE was High during the preceding clock cycle and the current
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
FUNCTION TRUTH TABLE(continued)
MITSUBISHI LSIs
Current State
RE-
FRESHING
MODE
REGISTER
SETTING
/S
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
/RAS
X
H
H
H
L
L
L
L
X
H
H
H
L
L
L
/CAS
X
H
H
L
H
H
L
L
X
H
H
L
H
H
L
/WE
X
H
L
X
H
L
H
L
X
H
L
X
H
L
H
Address
X
X
BA
BA,CA,A10
BA,RA
BA,A10
X
Op-Code,
Mode-Add
X
X
BA
BA,CA,A10
BA,RA
BA,A10
X
Command
DESEL
NOP NOP(Idle after tRC)
TBST
READ/WRITE
ACT
PRE/PREA
REFA
MRS
DESEL
NOP
TBST
READ/WRITE
ACT
PRE/PREA
REFA
NOP(Idle after tRC)
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
NOP(Idle after tRSC)
NOP(Idle after tRSC)
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
Action
L
L
L
L
Op-Code,
Mode-Add
MRS
ILLEGAL
ABBREVIATIONS:
H = Hige Level, L = Low Level, X = Don't Care
BA = Bank Address, RA = Row Address, CA = Column Address, NOP = No Operation
NOTES:
clock cycle.
2. ILLEGAL to bank in specified state; function may be legal in the bank indicated by BA,
depending on the state of that bank.
3. Must satisfy bus contention, bus turn around, write recovery requirements.
4. NOP to bank precharging or in idle state.May precharge bank indicated by BA.
5. ILLEGAL if any bank is not idle.
ILLEGAL = Device operation and / or date-integrity are not guaranteed.
MIT-DS-331-0.0
16/Jun. /1999
MITSUBISHI
ELECTRIC
10
MH32S72BBFA -7,-8
2. Power-Down and Self-Refresh can be entered only form the All banks idle State.
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
FUNCTION TRUTH TABLE FOR CKE
MITSUBISHI LSIs
Current State
SELF -
REFRESH*1
POWER
DOWN
ALL BANKS
IDLE*2
CK
n-1
CK
n
H
L
L
L
L
L
L
H
L
L
H
H
H
H
H
H
H
X
H
H
H
H
H
L
X
H
L
H
L
L
L
L
L
L
/S
X
H
L
L
L
L
X
X
X
X
X
L
H
L
L
L
L
/RAS
X
X
H
H
H
L
X
X
X
X
X
L
X
H
H
H
L
/CAS
X
X
H
H
L
X
X
X
X
X
X
L
X
H
H
L
X
/WE
X
X
H
L
X
X
X
X
X
X
X
H
X
H
L
X
X
Add
X
INVALID
Exit Self-Refresh(Idle after tRC)
X
Exit Self-Refresh(Idle after tRC)
X
ILLEGAL
X
ILLEGAL
X
ILLEGAL
X
NOP(Maintain Self-Refresh)
X
X
INVALID
Exit Power Down to Idle
X
NOP(Maintain Self-Refresh)
X
X
Refer to Function Truth Table
Enter Self-Refresh
X
Enter Power Down
X
Enter Power Down
X
ILLEGAL
X
ILLEGAL
X
ILLEGAL
X
Action
ANY STATE
other than
listed above
L
H
H
L
L
X
X
X
L
X
X
X
L
H
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Refer to Current State = Power Down
X
X
Refer to Function Truth Table
Begin CK0 Suspend at Next Cycle*3
X
X
Exit CK0 Suspend at Next Cycle*3
X
Maintain CK0 Suspend
ABBREVIATIONS:
H = High Level, L = Low Level, X = Don't Care
NOTES:
1. CKE Low to High transition will re-enable CK and other inputs asynchronously.
A minimum setup time must be satisfied before any command other than EXIT.
3. Must be legal command.
MIT-DS-331-0.0
16/Jun. /1999
MITSUBISHI
ELECTRIC
11
MITSUBISHI LSIs
POWER ON SEQUENCE
After these sequence, the SDRAM is idle state and ready for normal operation.
MODE REGISTER
LENGTH
MH32S72BBFA -7,-8
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Before starting normal operation, the following power on sequence is necessary to prevent
a SDRAM from damaged or malfunctioning.
1. Apply power and start clock. Attempt to maintain CKE high, DQMB high and NOP
condition at the inputs.
2. Maintain stable power, stable cock, and NOP input conditions for a minimum of 500µs.
3. Issue precharge commands for all banks. (PRE or PREA)
4. After all banks become idle state (after tRP), issue 8 or more auto-refresh commands.
5. Issue a mode register set command to initialize the mode register.
Burst Length, Burst Type and /CAS Latency can be
programmed by setting the mode register(MRS). The mode
register stores these date until the next MRS command, which
may be issue when both banks are in idle state. After tRSC
from a MRS command, the SDRAM is ready for new command.
BA0
0
LATENCY
MODE
BA1
0
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1
A11
0
CL
A9
A10
0
/CAS LATENCY
WM
A8
0
R
R
2
3
R
R
R
R
A7
0
A5
A6
LTMODE
A4
A3
BT
BURST
A2
BL
BA0,1 A11-A0
A1
A0
BL
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1
CLK
/CS
/RAS
/CAS
/WE
BT= 0
1
2
4
8
R
R
R
FP
V
BT= 1
1
2
4
8
R
R
R
R
WRITE
MODE
MIT-DS-331-0.0
0
BURST
1
SINGLE BIT
BURST
TYPE
0
1
R: Reserved for Future Use
FP: Full Page
MITSUBISHI
ELECTRIC
SEQUENTIAL
INTERLEAVED
16/Jun. /1999
12
MITSUBISHI LSIs
MH32S72BBFA -7,-8
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
CK
Command
Address
DQ
CL= 3
BL= 4
Initial Address BL
A2
0
0
0
0
1
A1
0
0
1
1
0
A0
0
1
0
1
8
0
Read
Y
/CAS Latency
1
0
2
1
3
2
4
3
5
4
Sequential
3
2
4
3
5
4
6
5
7
6
Q0 Q1 Q2 Q3
Burst Length
Column Addressing
5
4
6
5
7
6
0
7
1
0
7
6
0
7
1
0
2
1
3
2
Burst Type
1
0
0
1
3
2
2
3
5
4
Write
Y
D0 D1
Burst Length
Interleaved
3
2
2
3
1
0
0
1
7
6
D3
D2
5
4
4
5
7
6
6
7
1
0
7
6
6
7
5
4
4
5
3
2
0
1
1
1
-
-
-
-
-
-
MIT-DS-331-0.0
1
0
1
1
1
0
0
0
1
0
1
1
1
0
-
-
1
6
5
7
6
0
7
1
0
2
1
4
3
2
0
3
1
0
2
1
0
0
7
1
0
2
1
3
2
0
3
1
0
1
2
2
1
3
2
3
4
4
3
5
4
5
6
4
5
7
6
6
7
1
0
0
1
3
2
2
3
1
0
1
0
6
7
5
4
4
5
3
2
2
3
1
0
1
0
0
1
3
2
3
2
16/Jun. /1999
2
3
1
0
1
0
13
MITSUBISHI
ELECTRIC
MITSUBISHI LSIs
ABSOLUTE MAXIMUM RATINGS
mA
RECOMMENDED OPERATING CONDITION
CAPACITANCE
f=1MHz
MH32S72BBFA -7,-8
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Symbol
Vdd
VI
VO
IO
Pd
Topr
Tstg
(Ta=0 ~ 70°C, unless otherwise noted)
Symbol
Vdd
Operating Temperature
Parameter
Supply Voltage
Input Voltage
Output Voltage
Output Current
Power Dissipation
Storage Temperature
Parameter
Supply Voltage
Condition
with respect to Vss
with respect to Vss
with respect to Vss
Ta=25°C
Min.
3.0
Limits
Typ.
3.3
Ratings
-0.5 ~ 4.6
-0.5 ~ 4.6
-0.5 ~ 4.6
50
39
0 ~ 70
-45 ~ 100
Max.
3.6
Unit
V
V
V
W
°C
°C
Unit
V
Vss
VIH
VIL
(Ta=0 ~ 70°C, Vdd = 3.3 +/- 0.3V, Vss = 0V, unless otherwise noted)
Symbol
CI(A)
CI(C)
CI(CK)
CI(K)
CI/O
MIT-DS-331-0.0
High-Level Input Voltage all inputs
Low-Level Input Voltage all inputs
Input Capacitance, address pin
Input Capacitance, control pin
Input Capacitance, CKE pin
Input Capacitance, CK pin
Input Capacitance, I/O pin
Supply Voltage
Parameter
0
2.0
-0.3
Test Condition
VI = Vss
Vi=25mVrms
MITSUBISHI
ELECTRIC
0
Limits(max.)
Vdd+0.3
25
25
50
50
29
0
0.8
Unit
pF
pF
pF
pF
pF
16/Jun. /1999
V
V
V
14
MITSUBISHI LSIs
AVERAGE SUPPLY CURRENT from Vdd
AC OPERATING CONDITIONS AND CHARACTERISTICS
Limits
(max)
CKE=VILmax,tCLK=15ns
active stanby current
one bank active (discrete)
CKE=VILmax,tCLK=15ns
MH32S72BBFA -7,-8
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
(Ta=0 ~70°C, Vdd = 3.3 ± 0.3V, Vss = 0V, unless otherwise noted)
Parameter
operating current
one bank active (discrete)
precharge stanby current
in power-down mode
precharge stanby current
in non power-down mode
active stanby current
in power-down mode
in non power-down mode
burst current
auto-refresh current
self-refresh current
Note:Input signals are changed one time during 30ns.
Symbol
Icc1
Icc2P
Icc2PS
Icc2N
Icc2NS
Icc3P
Icc3PS
Icc3N
Icc3NS
Icc4
Icc5
Icc6
tRC=min.tCLK=min, BL=1, IOL=min
CKE=CLK=VILmax(fixed)
CKE=/CS=VIHmin,tCLK=15ns(Note)
CKE=VIHmin,CLK=VILmax(fixed)
CKE=CLK=VILmax(fixed)
CKE=/CS=VIHmin,tCLK=15ns
CKE=VIHmin,CLK=VILmax(fixed)
tCLK=min, BL=4, CL=3,IOL=0mAall banks active(discerte)
tRC=min, tCLK=min
CKE <0.2V
Test Condition
(Ta=0 ~ 70°C, Vdd = 3.3 ± 0.3V, Vss = 0V, unless otherwise noted)
-7, -8
2411
107
71
827
755 mA
107
71
2015 mA
1475 mA
2501
5435
71
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
Symbol
VOH(DC)
VOL(DC)
IOZ
MIT-DS-331-0.0
Parameter
High-Level Output Voltage(DC)
Low-Level Output Voltage(DC)
Off-stare Output Current
Input Current
Ii
Test Condition
IOH=-2mA
IOL=2mA
Q floating VO=0 ~ Vdd
VIH=0 ~ Vdd+0.3V
Limits
Min.
2.4
-10
-10
Max.
Unit
V
V
0.4
uA
10
uA
10
16/Jun. /1999
15
MITSUBISHI
ELECTRIC
MITSUBISHI LSIs
AC TIMING REQUIREMENTS
Input Setup time(all inputs)
Input Hold time(all inputs)
tSRX
MH32S72BBFA -7,-8
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
(Ta=0 ~ 70°C, Vdd = 3.3 +/- 0.3V, Vss = 0V, unless otherwise noted)
Input Pulse Levels: 0.8V to 2.0V
Input Timing Measurement Level: 1.4V
LATCH MODE
Limits
Symbol
tCLK
tCH
tCL
tT
Parameter
CK cycle time
CK High pulse width
CK Low pilse width
Transition time of CK
tIS
tIH
tRC
tRCD
tRAS
tRP
tWR
tRRD
Row cycle time
Row to Column Delay
Row Active time
Row Precharge time
Write Recovery time
Act to Act Deley time
tCCD Col to Col Delay time
tRSC
Mode Register Set Cycle time
Self Refresh Exit time
tREF
Refresh Interval time
Min.
CL=3
CL=4
-7
Max.
10
10
3
3 ns
1 10 ns
2
0 ns
70 ns
20 ns
50 100000 ns
20
10 ns
20 ns
10
20
10
64
Min.
13
10
4
4
1
2
0
70
20
50
20
10
20
10
20
10
-8
Max.
10
100000
64
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ms
Note:1 The timing requirements are assumed tT=1ns. If tT is longer than 1ns, (tT-1)ns
should be added to the parameter.
CK
1.4V
Any AC timing is
referenced to the input
signal crossing
through 1.4V.
Signal
MIT-DS-331-0.0
1.4V
16/Jun. /1999
MITSUBISHI
ELECTRIC
16
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
SWITCHING CHARACTERISTICS
Input Setup time(all inputs)
Input Hold time(all inputs)
Row to Column Delay
tSRX
BUFFER MODE
Symbol
tCLK
tCH
tCL
tT
Parameter
CK cycle time
CK High pulse width
CK Low pilse width
Transition time of CK
tIS
tIH
tRC
Row cycle time
tRCD
tRAS
tRP
tWR
tRRD
tCCD
tRSC
Row Active time 50 100000
Row Precharge time
Write Recovery time
Act to Act Deley time
Col to Col Delay time
Mode Register Set Cycle time
Self Refresh Exit time
tREF Refresh Interval time
CL=2
CL=3
MITSUBISHI LSIs
MH32S72BBFA -7,-8
Limits
-7
Min.
10
10
3
3 ns
1
7 ns
0 ns
70 ns
20
20 ns
10 ns
20
10 ns
20 ns
10
Max.
10 ns
64
Min.
-8
Max.
13
10 ns
4
4
1
7
0
70
20
50
20
10
20
10
20
10
10
100000
64
Unit
ns
ns
ns
ns
ns
ns
ms
Note:1 The timing requirements are assumed tT=1ns. If tT is longer than 1ns, (tT-1)ns
should be added to the parameter.
(Ta=0 ~ 70°C, Vdd = 3.3 +/- 0.3V, Vss = 0V, unless otherwise noted)
LATCH MODE
Limits
Symbol
tAC
tOH
tOLZ
tOHZ
Parameter
Access time from CK
Output Hold time
from CK
Delay time, output low
impedance from CK
Delay time, output high
impedance from CK
CL=3
CL=4
Min.
3
0
3
-7
Max.
6
6
6
Min.
3
0
3
-8
Max.
7
6
6
Unit
ns
ns
ns
ns
MIT-DS-331-0.0
MITSUBISHI
ELECTRIC
16/Jun. /1999
17
Loading...