FAST PAGE MODE 1207959552 - BIT ( 16777216 - WORD BY 72 - BIT ) DYNAMIC RAM
MITSUBISHI LSIs
Rev.3 '96.6.19
MH16V72TJ -6, -7
DESCRIPTION
The MH16V72TJ is 16777216-word x 72-bit dynamic ram
module. This consist of eighteen industry standard 16M x 4
dynamic RAMs in TSOP and two industry standard input
buffer in TSSOP.
The mounting of TSOP on a card edge dual in-line package
provides any application where high densities and large of
quantities memory are required.
This is a socket-type memory module ,suitable for easy
interchange or addition of module.
FEATURES
/RAS
/CAS Address /OECyclePower
access
access
access
Type name
MH16V72TJ-6
MH16V72TJ-7
Utilizes industry standard 16M x 4 RAMs TSOP and industry
standard input buffer in TSSOP
168-pin (84-pin dual in-line package)
Single +3.3V(±0.3V) supply operation
All input are directly TTL compatible
All output are three-state and directory LVTTL compatible
Includes(0.22uF x 20) decoupling capacitors
4096 refresh cycle every 64ms
Fast page mode
JEDEC standard pin configuration & Buffered PD pin
Buffered input except /RAS and DQ
Gold plating contact pads
time
time
(max.ns)
(max.ns)
6070202535402025110
time
(max.ns)
access
time
(max.ns)
time
(min.ns)
130
dissipation
(typ.W)
5.1
4.4
PIN CONFIGURATION
85pin
94pin
95pin
124pin
BACK SIDE
125pin
1pin
10pin
11pin
40pin
FRONT SIDE
41pin
APPLICATION
Main memory unit for computers , Microcomputer memory
PD&ID TABLE
PD1 PD2 PD3 PD4 PD5 PD6 PD7 PD8 ID0 ID1
- 6
111101
- 7
1111001000
1 = drive to VOH , 0 = drive to VOL
PD pin . . . buffered. When /PDE is low, PD information can be read
ID pin . . . non-buffered
1
1
00
0
MITSUBISHI
ELECTRIC
168pin
84pin
Preliminary Spec.
MITSUBISHI LSIs
Rev.3 '96.6.19
MH16V72TJ -6, -7
FAST PAGE MODE 1207959552 - BIT ( 16777216 - WORD BY 72 - BIT ) DYNAMIC RAM
PIN CONFIGURATION
Pin No.Pin NamePin No.Pin NamePin No.Pin NamePin No.Pin Name
Note : ACT : active, NAC : nonactive, DNC : don' t care, VLD : valid, IVD : Invalid, APD : applied, OPN : open
/RAS/CAS
ACT
ACT
ACT
ACT
ACT
ACT
ACT
NAC
ACT
ACT
ACT
ACT
NAC
ACT
ACT
DNC
InputsInput/Output
/W
NAC
ACT
ACT
ACT
DNC
DNC
NAC
DNC
a number of other functions, e.g., Fast page mode, /RASonly refresh, and delayed-write. The input conditions for
each are shown in Table 1.
/OE
ACT
DNC
DNC
ACT
DNC
ACT
DNC
DNC
Row
addressaddress
APD
APD
APD
APD
APD
APD
DNC
DNC
Column
APD
APD
APD
APD
DNC
DNC
DNC
DNC
Input
OPN
VLD
VLD
VLD
DNC
OPN
DNC
DNC
Output
VLD
OPN
IVD
VLD
OPN
VLD
OPN
OPN
MITSUBISHI LSIs
Rev.3 '96.6.19
RefreshRemark
YES
YES
YES
YES
YES
YES
YES
NO
Hyper page mode
identical
4
MITSUBISHI
ELECTRIC
Preliminary Spec.
ABSOLUTE MAXIMUM RATINGS
Symbol
Vcc
VI
VO
IO
Pd
Topr
Tstg
Supply voltage
Input voltage
Output voltage
Output current
Power dissipation
Operating temperature
Storage temperature
MITSUBISHI LSIs
MH16V72TJ -6, -7
Rev.3 '96.6.19
FAST PAGE MODE 1207959552 - BIT ( 16777216 - WORD BY 72 - BIT ) DYNAMIC RAM
ParameterConditions
With respect to Vss
Ta=25°C
Ratings
-0.5~4.6
-0.5~Vcc+0.5
-0.5~Vcc+0.5
50
20
0~70
-40~100
Unit
V
mA
W
°C
°C
RECOMMENDED OPERATING CONDITIONS
Symbol
Vcc
Vss
VIH
VIL
Note 1 : All voltage values are with respect to Vss
Supply voltage
Supply voltage
High-level input voltage, all inputs
Low-level input voltage
ELECTRICAL CHARACTERISTICS
Symbol
VOH
VOL
IOZ
I I
I I (RAS)
ICC1 (AV)
ICC2
ICC4(AV)
ICC6(AV)
Note 2: Current flowing into an IC is positive, out is negative.
3: Icc1 (AV), Icc3 (AV), Icc4 (AV) and Icc6 (AV) are dependent on cycle rate. Maximum current is measured at the fastest cycle rate.
4: Icc1 (AV) and Icc4 (AV) are dependent on output loading. Specified values are obtained with the output open.
5: Under condition of colmun address being changed once or less while /RAS=VIL and /CAS=VOH
High-level output voltage
Low-level output voltage
Off-state output current
Input current (except /RAS)
Input current (/RAS)
Average supply
current
from Vcc operating
Supply current from Vcc , stand-by
Average supply current
from Vcc
Fast-Page-Mode
Average supply current from Vcc
/CAS before /RAS refresh
mode
FAST PAGE MODE 1207959552 - BIT ( 16777216 - WORD BY 72 - BIT ) DYNAMIC RAM
SWITCHING CHARACTERISTICS
(Ta=0~70°C, Vcc=3.3V±0.3V, Vss=0V, unless otherwise noted , see notes 6,14,15)
Limits
ParameterSymbolUnit- 6
MinMax
tCAC
tRAC
tAA
tCPA
tOEA
tCLZOutput low impedance time from /CAS low(Note 7)
tOFF
tOEZ
Note 6: An initial pause of 500us is required after power-up followed by a minimum of eight initialization cycles (any combination of cycles
containing a /RAS clock such as /RAS-Only refresh).
Note the /RAS may be cycled during the initial pause . And any 8 /RAS or /RAS /CAS cycles are required after prolonged periods
(greater than 64 ms) of /RAS inactivity before proper device operation is achieved.
7: Measured with a load circuit equivalent to 1TTL loads and 50pF. The reference levels for measuring of output signals are 2.0(VOH)and 0.8(VOL).
8: Assumes that tRCD≥tRCD(max), tASC≥ASC(max).
9: Assumes that tRCD≤tRCD(max) and tRAD≤tRAD(max). If tRCD or tRAD is greater than the maximum recommended value shown in this table,
tRAC will increase by amount that tRCD exceeds the value shown.
10: Assumes that tRAD≥tRAD(max) and tASC≤tASC(max).
11: Assumes that tCP≤tCP(max) and tASC≥tASC(max).
12: tOEZ (max) and tOFF(max) defines the time at which the output achieves the high impedance state (IOUT≤ I±10uAI)
and is not reference to VOH(min) or VOL(max).
Access time from /CAS
Access time from /RAS
Columu address access time
Access time from /CAS precharge
Access time from /OE
Output disable time after /CAS high
Output disable time after /OE high
Note 13: The timing requirements are assumed tT =5ns.
14: VIH(min) and VIL(max) are reference levels for measuring timing of input signals.
15: tRCD(max) is specified as a reference point only. If tRCD is less than tRCD(max), access time is tRAC. If tRCD is greater than tRCD(max), access
time is controlled exclusively by tCAC or tAA. .
16: tRAD(max) is specified as a reference point only. If tRAD≥tRAD(max) and tASC≤tASC(max), access time is controlled exclusively by tAA.
17: tASC(max) is specified as a reference point only. If tRCD≥tRCD(max) and tASC≥tASC(max), access time is controlled exclusively by tCAC.
18: Either tDZC or tDZO must be satisfied.
19: Either tRDD or tCDD or tODD must be satisfied.
20: tT is measured between VIH(min) and VIL(max).
Refresh cycle time
/RAS high pulse width
Delay time, /RAS low to /CAS low
Delay time, /CAS high to /RAS low
Delay time, /RAS high to /CAS low
/CAS high pulse width
Column address delay time from /RAS low
Row address setup time before /RAS low
Column address setup time before /CAS low
Row address hold time after /RAS low
Column address hold time after /CAS low
Delay time, data to /CAS low
Delay time, data to /OE low
Delay time, /CAS high to data
Delay time, /OE high to data
Transition time
(Note15)
(Note16)
(Note17)
(Note18)
(Note18)
(Note19)
(Note19)
(Note20)
40
18
15
-5
10
13
5
0
8
10
0
0
20
20
1
Limits
-7
MinMax
64
64
50
40
18
45
15
-5
10
24
13
29
5
1010
0
8
17
0
0
25
25
50
1
50
Unit
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
6
MITSUBISHI
ELECTRIC
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