MITSUBISHI MH16V72TJ-6 User Manual

查询MH16V72TJ -6供应商查询MH16V72TJ -6供应商
Preliminary Spec.
FAST PAGE MODE 1207959552 - BIT ( 16777216 - WORD BY 72 - BIT ) DYNAMIC RAM
MITSUBISHI LSIs
Rev.3 '96.6.19
MH16V72TJ -6, -7
DESCRIPTION
FEATURES
/RAS
/CAS Address /OE Cycle Power
access
access
access
Type name
MH16V72TJ-6 MH16V72TJ-7
Utilizes industry standard 16M x 4 RAMs TSOP and industry standard input buffer in TSSOP 168-pin (84-pin dual in-line package) Single +3.3V(±0.3V) supply operation
Low stand-by power dissipation . . . . . . . . 68.4mW(Max)
Low operation power dissipation
MH16V72TJ -6 . . . . . . . . . . . . . . . . . . 6.52W(Max)
MH16V72TJ -7 . . . . . . . . . . . . . . . . . . 5.54W(Max)
All input are directly TTL compatible All output are three-state and directory LVTTL compatible Includes(0.22uF x 20) decoupling capacitors 4096 refresh cycle every 64ms Fast page mode JEDEC standard pin configuration & Buffered PD pin Buffered input except /RAS and DQ Gold plating contact pads
time
time
(max.ns)
(max.ns)
6070202535402025110
time
(max.ns)
access
time
(max.ns)
time
(min.ns)
130
dissipation
(typ.W)
5.1
4.4
PIN CONFIGURATION
85pin
94pin 95pin
124pin
BACK SIDE
125pin
1pin
10pin 11pin
40pin
FRONT SIDE
41pin
APPLICATION
Main memory unit for computers , Microcomputer memory
PD&ID TABLE
PD1 PD2 PD3 PD4 PD5 PD6 PD7 PD8 ID0 ID1
- 6
1 1 1 1 0 1
- 7
1 1 1 1 0 0 1 0 0 0
1 = drive to VOH , 0 = drive to VOL PD pin . . . buffered. When /PDE is low, PD information can be read ID pin . . . non-buffered
1
1
0 0
0
MITSUBISHI ELECTRIC
168pin
84pin
Preliminary Spec.
MITSUBISHI LSIs
Rev.3 '96.6.19
MH16V72TJ -6, -7
FAST PAGE MODE 1207959552 - BIT ( 16777216 - WORD BY 72 - BIT ) DYNAMIC RAM
PIN CONFIGURATION
Pin No. Pin Name Pin No. Pin Name Pin No. Pin Name Pin No. Pin Name
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42
1 2 3 4 5 6 7 8 9
Vss DQ0 DQ1 DQ2 DQ3
Vcc DQ4 DQ5 DQ6 DQ7 DQ8
Vss DQ9
DQ10 DQ11 DQ12 DQ13
Vcc
DQ14 DQ15 DQ16 DQ17
Vss
Reserved Reserved
Vcc
/WE0
/CAS0
Reserved
/RAS0
/OE0
Vss
A0 A2 A4 A6
A8 A10 A11 A12
Vcc RFU RFU
43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84
Vss
/OE2 /RAS2 /CAS4
Reserved
/WE2
Vcc Reserved Reserved
DQ18 DQ19
Vss
DQ20 DQ21 DQ22 DQ23
Vcc
DQ24
RFU RFU RFU
RFU DQ25 DQ26 DQ27
Vss DQ28 DQ29 DQ30 DQ31
Vcc DQ32 DQ33 DQ34 DQ35
Vss
PD1 PD3 PD5 PD7
ID0
Vcc
85 86 87 88 89 90 91 92 93 94 95 96 97 98
99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126
Vss DQ36 DQ37 DQ38 DQ39
Vcc DQ40 DQ41 DQ42 DQ43 DQ44
Vss DQ45 DQ46 DQ47 DQ48 DQ49
Vcc DQ50 DQ51 DQ52 DQ53
Vss
Reserved Reserved
Vcc
RFU Reserved Reserved Reserved
RFU
Vss
A1 A3 A5 A7 A9
Reserved
Vcc
RFU
B0
127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168
RFU Reserved Reserved Reserved
/PDE
Reserved Reserved
DQ54 DQ55
DQ56 DQ57 DQ58 DQ59
DQ60
RFU
RFU
RFU
RFU
DQ61 DQ62 DQ63
DQ64 DQ65 DQ66 DQ67
DQ68 DQ69 DQ70 DQ71
PD2
PD4
PD6
PD8
Vss
Vcc
Vss
Vcc
Vss
Vcc
Vss
ID1 Vcc
Reserved: Reserved use RFU: Reserved for future use
2
MITSUBISHI ELECTRIC
Preliminary Spec.
BLOCK DIAGRAM
MITSUBISHI LSIs
Rev.3 '96.6.19
MH16V72TJ -6, -7
FAST PAGE MODE 1207959552 - BIT ( 16777216 - WORD BY 72 - BIT ) DYNAMIC RAM
/RAS0 /CAS0 /WE0 /OE0
/RAS2 /CAS4 /WE2 /OE2
DQ0
/RAS/CAS/W/OE
M5M467400 M5M467400
D1
M5M467400 M5M467400
D2
M5M467400 M5M467400
D3
M5M467400 M5M467400
D4
M5M467400 M5M467400
D5
M5M467400 M5M467400
D6
M5M467400 M5M467400
D7
M5M467400 M5M467400
D8
M5M467400 M5M467400
D9
DQ1 ~DQ4
DQ1 ~DQ4
DQ1 ~DQ4
DQ1 ~DQ4
DQ1 ~DQ4
DQ1 ~DQ4
DQ1 ~DQ4
DQ1 ~DQ4
DQ1 ~DQ4
DQ1 DQ2 DQ3
DQ4
/RAS/CAS/W/OE
D10
DQ5 DQ6 DQ7
DQ8
/RAS/CAS/W/OE
D11
DQ9 DQ10 DQ11
DQ12
/RAS/CAS/W/OE
D12
DQ13 DQ14 DQ15
DQ16
/RAS/CAS/W/OE
D13
DQ17 DQ18 DQ19
DQ20
/RAS/CAS/W/OE
D14
DQ21 DQ22 DQ23
DQ24
/RAS/CAS/W/OE
D15
DQ25 DQ26 DQ27
DQ28
/RAS/CAS/W/OE
D16
DQ29 DQ30 DQ31
DQ32
/RAS/CAS/W/OE
D17
DQ33 DQ34 DQ35
D18
/RAS/CAS/W/OE
DQ1 ~DQ4
/RAS/CAS/W/OE
DQ1 ~DQ4
/RAS/CAS/W/OE
DQ1 ~DQ4
/RAS/CAS/W/OE
DQ1 ~DQ4
/RAS/CAS/W/OE
DQ1 ~DQ4
/RAS/CAS/W/OE
DQ1 ~DQ4
/RAS/CAS/W/OE
DQ1 ~DQ4
/RAS/CAS/W/OE
DQ1 ~DQ4
/RAS/CAS/W/OE
DQ1 ~DQ4
DQ36 DQ37 DQ38 DQ39
DQ40 DQ41 DQ42 DQ43
DQ44 DQ45 DQ46 DQ47
DQ48 DQ49 DQ50 DQ51
DQ52 DQ53 DQ54 DQ55
DQ56 DQ57 DQ58 DQ59
DQ60 DQ61 DQ62 DQ63
DQ64 DQ65 DQ66 DQ67
DQ68 DQ69 DQ70 DQ71
A0
B0
A1~A12
3
D1~D9
D10~D18
D1~D18
Vcc
Vss
C1~C20
. . .
MITSUBISHI ELECTRIC
D1~D18 & INPUT BUFFER
PIN NAME FUNCTION /RAS0, /RAS2 /CAS0, /CAS2 /WE0, /WE2 /OE0, /OE2 A0~A12, B0 DQ0~DQ71 Vcc Vss
ROW ADDRESS STROBE INPUT COLUMN ADDRESS STROBE INPUT WRITE CONTROL INPUT OUTPUT ENABLE INPUT ADDRESS INPUT DATA I/O POWER SUPPLY GROUND
Preliminary Spec.
MH16V72TJ -6, -7
FAST PAGE MODE 1207959552 - BIT ( 16777216 - WORD BY 72 - BIT ) DYNAMIC RAM
FUNCTION
The MH16V72TJ provide, in addition to normal read, write, and read-modify-write operations,
Table 1 Input conditions for each mode
Operation
Read Write (Early write) Write (Delayed write) Read-modify-write /RAS-only refresh Hidden refresh /CAS before /RAS refresh Standby
Note : ACT : active, NAC : nonactive, DNC : don' t care, VLD : valid, IVD : Invalid, APD : applied, OPN : open
/RAS /CAS
ACT ACT ACT ACT ACT ACT ACT NAC
ACT ACT ACT ACT NAC ACT ACT DNC
Inputs Input/Output
/W
NAC
ACT ACT
ACT DNC DNC NAC DNC
a number of other functions, e.g., Fast page mode, /RAS­only refresh, and delayed-write. The input conditions for each are shown in Table 1.
/OE ACT
DNC DNC ACT DNC ACT DNC DNC
Row
address address
APD APD APD APD APD APD DNC DNC
Column
APD APD APD APD DNC DNC DNC DNC
Input OPN
VLD VLD VLD
DNC
OPN
DNC DNC
Output
VLD
OPN
IVD VLD
OPN
VLD OPN OPN
MITSUBISHI LSIs
Rev.3 '96.6.19
Refresh Remark
YES YES YES YES YES YES YES
NO
Hyper page mode identical
4
MITSUBISHI ELECTRIC
Preliminary Spec.
ABSOLUTE MAXIMUM RATINGS
Symbol Vcc VI VO
IO Pd Topr Tstg
Supply voltage Input voltage Output voltage Output current Power dissipation Operating temperature Storage temperature
MITSUBISHI LSIs
MH16V72TJ -6, -7
Rev.3 '96.6.19
FAST PAGE MODE 1207959552 - BIT ( 16777216 - WORD BY 72 - BIT ) DYNAMIC RAM
Parameter Conditions
With respect to Vss
Ta=25°C
Ratings
-0.5~4.6
-0.5~Vcc+0.5
-0.5~Vcc+0.5 50 20
0~70
-40~100
Unit
V
mA
W °C °C
RECOMMENDED OPERATING CONDITIONS
Symbol
Vcc Vss VIH
VIL
Note 1 : All voltage values are with respect to Vss
Supply voltage Supply voltage High-level input voltage, all inputs Low-level input voltage
ELECTRICAL CHARACTERISTICS
Symbol
VOH VOL IOZ I I I I (RAS)
ICC1 (AV)
ICC2
ICC4(AV)
ICC6(AV)
Note 2: Current flowing into an IC is positive, out is negative. 3: Icc1 (AV), Icc3 (AV), Icc4 (AV) and Icc6 (AV) are dependent on cycle rate. Maximum current is measured at the fastest cycle rate. 4: Icc1 (AV) and Icc4 (AV) are dependent on output loading. Specified values are obtained with the output open. 5: Under condition of colmun address being changed once or less while /RAS=VIL and /CAS=VOH
High-level output voltage Low-level output voltage Off-state output current Input current (except /RAS) Input current (/RAS) Average supply
current from Vcc operating
Supply current from Vcc , stand-by Average supply current
from Vcc Fast-Page-Mode
Average supply current from Vcc /CAS before /RAS refresh mode
Parameter
Parameter
(Ta=0~ 70°C, Vcc=3.3V±0.3V, Vss=0V, unless otherwise noted) (Note 2)
- 6
(Note 3,4,5)
- 7
- 6
(Note 3,4,5)
- 7
- 6
(Note 3,5)
- 7
(Ta=0~ 70°C, unless otherwise noted) (Note 1)
Limits
Min Nom Max
3.6
3.3
3.0 0
0
2.0
-0.3
IOH=-2mA IOL=2mA Q floating 0VVOUTVcc
0VVINVcc+0.3, Other input pins=0V 0VVINVcc+0.3, Other input pins=0V
/RAS, /CAS cycling tRC=tWC=min. output open
/RAS=/CAS =VIH, output open /RAS=/CASVcc -0.2, output open /RAS=VIL,/CAS cycling
tPC=min. output open
/CAS before /RAS refresh cycling tRC=min. output open
Vcc+0.3
0.8
Test conditions
Unit
V V
0
V V
Min
2.4 0
-10
-10
-90
Limits
Typ
Max
Vcc
0.4 10 10 90
1810 1540
28 19
1720 1450
1980 1620
Unit
V
V uA uA
uA
mA
mA
mA
mA
CAPACITANCE
Symbol Parameter
CI (/RAS)
C(DQ)
Input capacitance, /RAS input Input capacitance, except /RAS input 11 Input/Output capacitance,DATA
5
(Ta = 0Å`70Åé, Vcc = 3.3VÅ}0.3V, Vss = 0V, unless otherwise noted)
Test conditions
VI=Vss f=1MHZ Vi=25mVrms
MITSUBISHI ELECTRIC
Limits
Min Max
Typ
70
14
Unit
pF pFCI pF
Preliminary Spec.
MITSUBISHI LSIs
Rev.3 '96.6.19
MH16V72TJ -6, -7
FAST PAGE MODE 1207959552 - BIT ( 16777216 - WORD BY 72 - BIT ) DYNAMIC RAM
SWITCHING CHARACTERISTICS
(Ta=0~70°C, Vcc=3.3V±0.3V, Vss=0V, unless otherwise noted , see notes 6,14,15)
Limits
ParameterSymbol Unit- 6
Min Max tCAC tRAC tAA tCPA tOEA tCLZ Output low impedance time from /CAS low (Note 7) tOFF tOEZ
Note 6: An initial pause of 500us is required after power-up followed by a minimum of eight initialization cycles (any combination of cycles containing a /RAS clock such as /RAS-Only refresh). Note the /RAS may be cycled during the initial pause . And any 8 /RAS or /RAS /CAS cycles are required after prolonged periods (greater than 64 ms) of /RAS inactivity before proper device operation is achieved. 7: Measured with a load circuit equivalent to 1TTL loads and 50pF. The reference levels for measuring of output signals are 2.0(VOH)and 0.8(VOL). 8: Assumes that tRCDtRCD(max), tASCASC(max). 9: Assumes that tRCDtRCD(max) and tRADtRAD(max). If tRCD or tRAD is greater than the maximum recommended value shown in this table, tRAC will increase by amount that tRCD exceeds the value shown. 10: Assumes that tRADtRAD(max) and tASCtASC(max). 11: Assumes that tCPtCP(max) and tASCtASC(max). 12: tOEZ (max) and tOFF(max) defines the time at which the output achieves the high impedance state (IOUT I±10uAI) and is not reference to VOH(min) or VOL(max).
Access time from /CAS Access time from /RAS Columu address access time Access time from /CAS precharge Access time from /OE
Output disable time after /CAS high Output disable time after /OE high
(Note 7,8)
(Note 7,9) (Note 7,10) (Note 7,11)
(Note 7)
(Note 12) (Note 12)
20 60 35 40 20
10 10
5 5 5 5
20 20
- 7
Min Max
25 70 40 45 25
25 25
ns ns ns ns ns ns ns ns
TIMING REQUIREMENTS (For Read, Write, Read-Modify-Write ,Refresh, and Fast-Page Mode Cycles)
(Ta=0~70°C, Vcc=3.3V±0.3V, Vss=0V, unless otherwise noted ,see notes 14,15)
ParameterSymbol
-6
Min Max tREF tRP tRCD tCRP tRPC tCPN tRAD tASR tASC tRAH tCAH tDZC tDZO tCDD tODD tT
Note 13: The timing requirements are assumed tT =5ns. 14: VIH(min) and VIL(max) are reference levels for measuring timing of input signals. 15: tRCD(max) is specified as a reference point only. If tRCD is less than tRCD(max), access time is tRAC. If tRCD is greater than tRCD(max), access time is controlled exclusively by tCAC or tAA. . 16: tRAD(max) is specified as a reference point only. If tRADtRAD(max) and tASCtASC(max), access time is controlled exclusively by tAA. 17: tASC(max) is specified as a reference point only. If tRCDtRCD(max) and tASCtASC(max), access time is controlled exclusively by tCAC. 18: Either tDZC or tDZO must be satisfied. 19: Either tRDD or tCDD or tODD must be satisfied. 20: tT is measured between VIH(min) and VIL(max).
Refresh cycle time /RAS high pulse width Delay time, /RAS low to /CAS low Delay time, /CAS high to /RAS low Delay time, /RAS high to /CAS low /CAS high pulse width Column address delay time from /RAS low Row address setup time before /RAS low Column address setup time before /CAS low Row address hold time after /RAS low Column address hold time after /CAS low Delay time, data to /CAS low Delay time, data to /OE low Delay time, /CAS high to data Delay time, /OE high to data Transition time
(Note15)
(Note16)
(Note17)
(Note18) (Note18) (Note19) (Note19) (Note20)
40 18 15
-5 10 13
5 0 8
10
0
0 20 20
1
Limits
-7
Min Max
64
64
50
40
18
45
15
-5
10
24
13
29
5
10 10
0 8
17
0
0 25 25
50
1
50
Unit
ms ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
6
MITSUBISHI ELECTRIC
Loading...
+ 13 hidden pages