Mitsubishi MH16V725BWJ-5, MH16V725BWJ-6 Datasheet
Preliminary Spec.
Specifications subject to
change without notice.
MITSUBISHI LSIs
MH16V725BWJ -5, -6
HYPER PAGE MODE 1207959552 - BIT ( 16777216 - WORD BY 72 - BIT ) DYNAMIC RAM
DESCRIPTION
The MH16V725BWJ is 16777216-word x 72-bit dynamic
ram module. This consist of eighteen industry standard
16M x 4 dynamic RAMs in SOJ and one industry standard
EEPROM in TSSOP.
The mounting of SOJs and TSSOP on a card edge dual
in-line package provides any application where high
densities and large of quantities memory are required.
This is a socket-type memory module ,suitable for easy
interchange or addition of module.
FEATURES
/RAS
/CAS Address /OE Cycle Power
access
access
access
Type name
MH16V725BWJ-5
MH16V725BWJ-6
time
(max.ns)
50
60
time
(max.ns)
13 25 13
15 30
Utilizes industry standard 16M x 4 RAMs in SOJ and industry
standard EEPROM in TSSOP
168-pin (84-pin dual dual in-line package)
Single +3.3V(±0.3V) supply operation
Low stand-by power dissipation
32.4mW(Max) . . . . . . . . . . . . . . . . . . . LVCMOS input level
Low operation power dissipation
MH16V725BWJ -5 . . . . . . . . . . . . . . . . . . 6.48W(Max)
MH16V725BWJ -6 . . . . . . . . . . . . . . . . . . 5.84W(Max)
All input are directly LVTTL compatible
All output are three-state and directly LVTTL compatible
Includes(0.22uF x 18) decoupling capacitors
4096 refresh cycle every 64ms (CBR Ref)
8192 refresh cycle every 64ms (RAS Only Ref,Normal R/W)
Hyper-page mode,Read-modify-write,
/CAS before /RAS refresh,Hidden refresh capabilities
Gold plating contact pads
time
(max.ns)
access
time
(max.ns)
15
time
(min.ns)
84
104
dissipation
(typ.W)
5.40
4.50
PIN CONFIGURATION
85pin
94pin
95pin
124pin
BACK SIDE
125pin
1pin
10pin
11pin
40pin
FRONT SIDE
41pin
Row Address
Column Address
A0 ~ A12
A0 ~ A10
APPLICATION
Main memory unit for computers , Microcomputer memory
MIT-DS-0236-0.0
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ELECTRIC
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1
168pin
84pin
27/Jul./1998
Preliminary Spec.
Specifications subject to
change without notice.
MH16V725BWJ -5, -6
HYPER PAGE MODE 1207959552 - BIT ( 16777216 - WORD BY 72 - BIT ) DYNAMIC RAM
MITSUBISHI LSIs
PIN CONFIGURATION
Pin No. Pin Name Pin No. Pin Name Pin No. Pin Name Pin No. Pin Name
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
Vss
DQ0
DQ1
DQ2
DQ3
Vcc
DQ4
DQ5
DQ6
DQ7
DQ8
Vss
DQ9
DQ10
DQ11
DQ12
DQ13
Vcc
DQ14
DQ15
CB0
CB1
Vss
NC
NC
Vcc
/WE0
/CAS0
/CAS1
/RAS0
/OE0
Vss
A0
A2
A4
A6
A8
A10 A11
A12
Vcc
Vcc
DU
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
Vss
/OE2
/RAS2
/CAS2
/CAS3
/WE2
Vcc
NC
NC
CB2
CB3
Vss
DQ16
DQ17
DQ18
DQ19
Vcc
DQ20
NC
DU
NC
Vss
DQ21
DQ22
DQ23
Vss
DQ24
DQ25
DQ26
DQ27
Vcc
DQ28
DQ29
DQ30
DQ31
Vss
NC
NC
NC
SDA
SCL
Vcc
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
Vss
DQ32
DQ33
DQ34
DQ35
Vcc
DQ36
DQ37
DQ38
DQ39
DQ40
Vss
DQ41
DQ42
DQ43
DQ44
DQ45
Vcc
DQ46
DQ47
CB4
CB5
Vss
NC
NC
Vcc
DU
/CAS4
/CAS5
NC
DU
Vss
A1
A3
A5
A7
A9
NC
Vcc
DU
DU
NC: No Connect
DU: Don't Use
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
Vss
/CAS6
/CAS7
Vcc
CB6
CB7
Vss
DQ48
DQ49
DQ50
DQ51
Vcc
DQ52
Vss
DQ53
DQ54
DQ55
Vss
DQ56
DQ57
DQ58
DQ59
Vcc
DQ60
DQ61
DQ62
DQ63
Vss
SA0
SA1
SA2
Vcc
DU
NC
DU
NC
NC
NC
DU
NC
NC
NC
MIT-DS-0236-0.0
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ELECTRIC
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27/Jul./1998
Preliminary Spec.
Specifications subject to
change without notice.
HYPER PAGE MODE 1207959552 - BIT ( 16777216 - WORD BY 72 - BIT ) DYNAMIC RAM
BLOCK DIAGRAM
MITSUBISHI LSIs
MH16V725BWJ -5, -6
/RAS0
/WE0
/OE0
/CAS0
/CAS1
/CAS2
/CAS3
M5M467405BJ
D1
M5M467405BJ
D2
M5M467405BJ
D3
M5M467405BJ
D4
M5M467405BJ
D5
M5M467405BJ
D6
M5M4V17405CJ
M5M467405BJ
D1
D7
M5M467405BJ
D8
M5M467405BJ
D9
/RAS2
/WE2
/OE2
/RAS/W/OE
/RAS/W/OE
/RAS/W/OE
/RAS/W/OE
/RAS/W/OE
/RAS/W/OE
/RAS/W/OE
/RAS/W/OE
/RAS/W/OE
/RAS/W/OE
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
CB0
CB1
CB2
CB3
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
/CAS4
/CAS5
/CAS6
/CAS7
/RAS/W/OE
M5M467405BJ
D10
/RAS/W/OE
M5M467405BJ
D11
/RAS/W/OE
M5M467405BJ
D12
/RAS/W/OE
M5M467405BJ
D13
/RAS/W/OE
M5M467405BJ
D14
/RAS/W/OE
M5M467405BJ
D15
/RAS/W/OE
M5M467405BJ
D16
/RAS/W/OE
M5M467405BJ
D17
/RAS/W/OE
M5M467405BJ
D18
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
CB4
CB5
CB6
CB7
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
A0 ~ A11 D1 ~ D18
Vcc
Vss
MIT-DS-0236-0.0
C1 ~ C18
. . .
D1 ~ D18
MITSUBISHI
ELECTRIC
( / 22 )
3
SCL
EEPROM
A0 A1 A2
SA2SA1SA0
SDA
27/Jul./1998
Preliminary Spec.
Specifications subject to
change without notice.
MH16V725BWJ -5, -6
MITSUBISHI LSIs
HYPER PAGE MODE 1207959552 - BIT ( 16777216 - WORD BY 72 - BIT ) DYNAMIC RAM
FUNCTION
The MH16V725BWJ provide, in addition to normal
read, write, and read-modify-write operations,
Table 1 Input conditions for each mode
Operation
Read
Write (Early write)
Write (Delayed write)
Read-modify-write
Hidden refresh
/CAS before /RAS refresh
Standby
Note : ACT : active, NAC : nonactive, DNC : don' t care, VLD : valid, IVD : Invalid, APD : applied, OPN : open
/RAS /CAS
ACT
ACT
ACT
ACT
ACT
ACT
NAC DNC DNC DNC OPN NODNC DNC DNC
ACT
ACT
ACT
ACT
ACT
ACT
Inputs Input/Output
/W
NAC
ACT
ACT
ACT
DNC
NAC
a number of other functions, e.g., Hyper page mode,
/CAS before /RAS refresh, and delayed-write. The
input conditions for each are shown in Table 1.
/OE
ACT
DNC
DNC
ACT
ACT
DNC
Row
address
APD
APD
APD
APD
DNC
DNC
Column
address
APD
APD
APD
APD
DNC
DNC
Input
OPN
VLD
VLD
VLD
OPN
DNC
Output
OPN
OPN
Refresh
VLD
IVD
VLD
VLD
YES
YES
YES
YES
YES
YES
Remark
Hyper page
mode
identical
MIT-DS-0236-0.0
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ELECTRIC
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27/Jul./1998
Preliminary Spec.
Specifications subject to
change without notice.
HYPER PAGE MODE 1207959552 - BIT ( 16777216 - WORD BY 72 - BIT ) DYNAMIC RAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Vcc
VI Supply voltage
VO Supply voltage
IO
Pd
Topr
Tstg
Supply voltage
Output current
Power dissipation
Operating temperature
Storage temperature
MH16V725BWJ -5, -6
Parameter Conditions
With respect to Vss
Ta=25°C
MITSUBISHI LSIs
Ratings
-0.5~ 4.6
-0.5~ 4.6 V
-0.5~ 4.6 V
50
18
0~70
-40~125
Unit
mA
V
W
°C
°C
RECOMMENDED OPERATING CONDITIONS
Symbol
Vcc
Vss
VIH
VIL
Note 1 : All voltage values are with respect to Vss
Supply voltage
Supply voltage
High-level input voltage, all inputs
Low-level input voltage
ELECTRICAL CHARACTERISTICS
Symbol
VOH
VOL
IOZ
I I
I I (CAS)
ICC1 (AV)
ICC2
ICC4(AV)
ICC6(AV)
Note 2: Current flowing into an IC is positive, out is negative.
3: Icc1 (AV), Icc3 (AV), Icc4 (AV) and Icc6 (AV) are dependent on cycle rate. Maximum current is measured at the fastest cycle rate.
4: Icc1 (AV) and Icc4 (AV) are dependent on output loading. Specified values are obtained with the output open.
5: Column address can be changed once or less while /RAS=VIL and /CAS=VIH
High-level output voltage
Low-level output voltage
Off-state output current
Input current (except /CAS)
Input current (/CAS) 0V≤VIN≤Vcc+0.3, Other input pins=0V
Average supply
current
from Vcc operating
Supply current from Vcc , stand-by
Average supply current
from Vcc
Hyper-Page-Mode
Average supply current from
Vcc
/CAS before /RAS refresh
mode
Parameter
Parameter
(Note 3,4,5)
(Note 3,4,5)
(Ta=0~70°C, Vcc=3.3V±0.3V, Vss=0V, unless otherwise noted) (Note 2)
- 5
- 6
- 5 1800
- 6
- 5 2340
(Note 3,5)
- 6
(Ta=0~70°C, unless otherwise noted) (Note 1)
Limits
Min Nom Max
3.6
3.3
3.0
0
0
2.0
-0.3
IOH=-2.0mA
IOL=2.0mA
Q floating 0V ≤VOUT≤ Vcc
0V≤VIN≤Vcc+0.3, Other input pins=0V
/RAS, /CAS cycling
tRC=tWC=min.
output open
/RAS=/CAS =VIH, output open
/RAS=/CAS=WE≥Vcc -0.2, output open
/RAS=VIL,/CAS cycling
tPC=min.
output open
/CAS before /RAS refresh cycling
tRC=min.
output open
Vcc+0.3
0.8
Test conditions
Unit
V
0
V
V
V
Min
2.4
0
-10
-180
-30
Limits
Typ
Max
Vcc
0.4
10
180
30
1800
1620
18
1620
2160
Unit
V
V
uA
uA
uA
mA
mA
9
mA
mA
CAPACITANCE
Symbol Parameter
CI (/CAS)
C(DQ)
C(SCL)
C(SDA) Input/Output capacitance,SPD DATA
C(SA0~3) Input capacitance, SPD address 7
MIT-DS-0236-0.0
(Ta = 0~70°C, Vcc = 3.3V±0.3V, Vss = 0V, unless otherwise noted)
Test conditions
Input capacitance, /CAS input
Input capacitance, except /CAS input 140
Input/Output capacitance,DATA
Input capacitance, SPD clock
VI=Vss
f=1MHZ
Vi=25mVrms
Min Max
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ELECTRIC
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5
Limits
Typ
20
15
9
9
Unit
pF
pFCI
pF
pF
pF
pF
27/Jul./1998
Preliminary Spec.
Specifications subject to
change without notice.
MITSUBISHI LSIs
MH16V725BWJ -5, -6
HYPER PAGE MODE 1207959552 - BIT ( 16777216 - WORD BY 72 - BIT ) DYNAMIC RAM
SWITCHING CHARACTERISTICS
(Ta=0~70°C, Vcc=3.3V±0.3V, Vss=0V, unless otherwise noted , see notes 6,14,15)
Limits
ParameterSymbol
- 5
Min Max
tCAC
tRAC
tAA
tCPA
tOEA
tOHC Output hold time from /CAS
tOHR
tCLZ
tOEZ
tWEZ Output disable time after /WE high (Note 12)
tOFF
tREZ
Note 6: An initial pause of 500us is required after power-up followed by a minimum of eight initialization cycles (any combination of cycles
containing /CAS before /RAS refresh).
Note the /RAS may be cycled during the initial pause . And any 8 /RAS or /RAS /CAS cycles are required after prolonged periods
(greater than 64 ms) of /RAS inactivity before proper device operation is achieved.
7: Measured with a load circuit equivalent to 1 TTL load and 100pF,VOH=2.4V(IOH=-2mA) and VOL=0.4V(IOL=-2mA).
The reference levels for measuring of output signals are 2.0V(VOH)and 0.8V(VOL).
8: Assumes that tRCD ≥ tRCD(max), tASC ≥ tASC(max) and tCP ≥ tCP(max).
9: Assumes that tRCD ≤ tRCD(max) and tRAD ≤ tRAD(max). If tRCD or tRAD is greater than the maximum recommended value shown in this table,
tRAC will increase by amount that tRCD exceeds the value shown.
10: Assumes that tRAD ≥ tRAD(max) and tASC ≤ tASC(max).
11: Assumes that tCP ≤ tCP(max) and tASC ≥ tASC(max).
12: tOEZ (max), tWEZ(max), tOFF(max) and tREZ(max) defines the time at which the output achieves the high impedance state (IOUT ≤ I ± 10uA I )
and is not reference to VOH(min) or VOL(max).
13: Output is disabled after both /RAS and /CAS go to high.
Access time from /CAS
Access time from /RAS
Column address access time
Access time from /CAS precharge
Access time from /OE
Output hold time from /RAS
Output low impedance time /CAS low
(Note 7,8)
(Note 7,9)
(Note 7,10)
(Note 7,11)
(Note 7)
(Note 13)
(Note 7)
Output disable time after /OE high (Note 12)
Output disable time after /CAS high
Output disable time after /RAS high
(Note 12,13)
(Note 12,13)
13
50
25
28
13
5
5
5
13
13
13
13
- 6
Min Max
15
60
30
33
15
5
5
5
15
15
15
15
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
TIMING REQUIREMENTS (For Read, Write, Read-Modify-Write ,Refresh, and Hyper-Page Mode Cycles)
(Ta=0~70°C, Vcc=3.3V±0.3V, Vss=0V, unless otherwise noted ,see notes 14,15)
Limits
ParameterSymbol
-5
Min Max
tREF
tRP
tRCD
tCRP
tRPC
tCPN
tRAD
tASR
tASC
tRAH
tCAH
tDZC
tDZO
tRDD
tCDD
tODD
tT Transition time
Note 14: The timing requirements are assumed tT =2ns.
15: VIH(min) and VIL(max) are reference levels for measuring timing of input signals.
16: tRCD(max) is specified as a reference point only. If tRCD is less than tRCD(max), access time is tRAC. If tRCD is greater than tRCD(max), access
time is controlled exclusively by tCAC or tAA. .
17: tRAD(max) is specified as a reference point only. If tRAD≥tRAD(max) and tASC≤tASC(max), access time is controlled exclusively by tAA.
18: tASC(max) is specified as a reference point only. If tRCD≥tRCD(max) and tASC≥tASC(max), access time is controlled exclusively by tCAC.
19: Either tDZC or tDZO must be satisfied.
20: Either tRDD or tCDD or tODD must be satisfied.
21: tT is measured between VIH(min) and VIL(max).
Refresh cycle time
/RAS high pulse width
Delay time, /RAS low to /CAS low
Delay time, /CAS high to /RAS low
Delay time, /RAS high to /CAS low
/CAS high pulse width
Column address delay time from /RAS low
Row address setup time before /RAS low
Column address setup time before /CAS low
Row address hold time after /RAS low
Column address hold time after /CAS low
Delay time, data to /CAS low
Delay time, data to /OE low
Delay time, /RAS high to data
Delay time, /CAS high to data
Delay time, /OE high to data
(Note16)
(Note17)
(Note18)
(Note19)
(Note19)
(Note20)
(Note20)
(Note20)
(Note21)
30
14
10
13
13
13
64
37
5
0
8
25
0
0
10
8
8
0
0
501
-6
Min Max
64
40
14
45
5
0
10
12
30
0
0
13
10
10
0
0
15
15
15
1 ns
50
Unit
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
MIT-DS-0236-0.0
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ELECTRIC
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27/Jul./1998
Preliminary Spec.
Specifications subject to
change without notice.
HYPER PAGE MODE 1207959552 - BIT ( 16777216 - WORD BY 72 - BIT ) DYNAMIC RAM
Read and Refresh Cycles
ParameterSymbol Unit-6
tRC
tRAS
tCAS
tCSH
tRSH
tRCS
tRCH
tRRH
tRAL
tORH
Note 22: Either tRCH or tRRH must be satisfied for a read cycle.
Write Cycle (Early Write and Delayed Write)
tWC
tRAS
tCAS
tCSH
tRSH
tWCS
tWCH
tCWL
tRWL
tWP
tDS
tDH
Read cycle time
/RAS low pulse width
/CAS low pulse width
/CAS hold time after /RAS low
/RAS hold time after /CAS low
Read Setup time after /CAS high
Read hold time after /CAS low
Read hold time after /RAS low
Column address to /RAS hold time
/RAS hold time after /OE low
/CAS hold time after /OE low
ParameterSymbol
Write cycle time
/RAS low pulse width
/CAS low pulse width
/CAS hold time after /RAS low
/RAS hold time after /CAS low
Write setup time before /CAS low
Write hold time after /CAS low
/CAS hold time after /W low
/RAS hold time after /W low
Write pulse width
Data setup time before /CAS low or /W low
Data hold time after /CAS low or /W low
(Note 22)
(Note 22)
(Note 24)
MITSUBISHI LSIs
MH16V725BWJ -5, -6
Limits
-5
Min Max
84
50
8
35
13
0
0
0
25
13
13
13
Min Max
84
50
8
35
13
0
8
8
8
8
0
8
10000
10000
-5
10000
10000
Min Max
104
60
15tOCH
Limits
Min Max
104
60
10
10
40
15
30
18tCAL Column address to /CAS hold time
15
10
40
15
10
10
10
10
ns
10000
10000
0
0
0
-6
10000
10000
0
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read-Write and Read-Modify-Write Cycles
Limits
ParameterSymbol
tRWC
tRAS
tCAS
tCSH
tRSH
tRCS
tCWD
tRWD
tAWD
tOEH
Note 23: tRWC is specified as tRWC(min)=tRAC(max)+tODD(min)+tRWL(min)+tRP(min)+4tT.
24:tWCS, tCWD,tRWD ,tAWD and,tCPWD are specified as reference points only. If tWCS≥tWCS(min) the cycle is an early write cycle and the DQ pins will remain
high impedance throughout the entire cycle. If tCWD≥tCWD(min), tRWD≥tRWD (min), tAWD≥tAWD(min) and tCPWD ≥tCPWD(min) (for Hyper page mode cycle only),
the cycle is a read-modify-write cycle and the DQ will contain the data read from the selected address. If neither of the above condition (delayed write) of the DQ (at access
time and until /CAS or /OE goes back to VIH) is indeterminate.
Read write/read modify write cycle time
/RAS low pulse width
/CAS low pulse width
/CAS hold time after /RAS low
/RAS hold time after /CAS low
Read setup time before /CAS low
Delay time, /CAS low to /W low
Delay time, /RAS low to /W low
Delay time, address to /W low
/OE hold time after /W low
MIT-DS-0236-0.0
(Note23)
(Note24)
(Note24)
(Note24)
MITSUBISHI
-5
Min Max
109
75
38
70
38
0
28
65
40
13
10000
10000
-6
Min Max
133
89
44
82
44
0
32
77
47
15
10000
10000
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
27/Jul./1998
ELECTRIC
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