Mitsubishi MGFS45V2527 Datasheet

MITSUBISHI SEMICONDUCTOR <GaAs FET>

Output power at 1dB gain

compression

MGFS45V2527

2.5~2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET

DESCRIPTION

The MGFS45V2527 is an internally impedance matched
GaAs power FET especially designed for use in 2.5~2.7
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.

FEATURES

Class A operation
Internally matched to 50 (Ω) system
High output power

P1dB=30W (TYP.) @f=2.5~2.7GHz

High power gain

GLP=12dB (TYP.) @f=2.5~2.7GHz

High power added efficiency

ηadd=45% (TYP.) @f=2.5~2.7GHz

Loe distortion [item -51]

IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L.

APPLICATION

item 01 : 2.5~2.7GHz band power amplifier
item 51 : 2.5~2.7GHz band digital radio communication

QUALITY GRADE

IG

RECOMMENDED BIAS CONDITIONS

VDS=10V
ID=6.5A
RG=25Ω

OUTLINE DRAWING

R1.2

GF-38

Until : millimeters (inches)

24±0.3 (0.945±0.012)

(0.024±0.006)

0.6±0.15

20.4±0.2 (0.803±0.008)

16.7 (0.658)

(1) GATE
(2) Source (FLANGE)
(3) DRAIN

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Symbol

VGDO
VGSO
ID
IGR Reverse gate current
IGF
PT
Tch
Tstg

*1 : Tc=25°C

Gate to drain voltage -15 V
Gate to source voltage
Drain current

Forward gate current
Total power dissipation
Channel temperature
Storage temperature

Parameter Ratings Unit

V
A

mA
mA

°C

*1

175

-65 ~ +175 °C

-15
22

-61
76
88 W

Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (i)placement of
substitutive, auxiliary circuits, (ii)use of non-flammable
material or (iii)prevention against any malfunction or mishap.

ELECTRICAL CHARACTERISTICS (Ta=25°C)

Symbol Parameter

VGS (off)

Saturated drain current VDS=3V, ID=60mA V

Test conditions

P1dB
GLP

ID
ηadd
IM3
Rth (ch-c)

*1 : Channel to case
*2 : item -51, 2 tone test, Po=34.5dBm Single Carrier Level, f=2.5, 2.6, 2.7GHz,∆f=5MHz

Linear power gain 12 — dB
Drain current

Power added efficiency 45
3rd order IM distortion
Thermal resistance

VDS=10V, ID(RF off)=6.5A, f=2.5~2.7GHz

*2

∆Vf method

*1

< Keep safety first in your circuit designs! >

Limits

Min. Typ. Max

-5
—

—
—
—

1.7

44
11

—
—

-42
—

——
45 dBm

7.5 A

-45
— °C/W

Unit

%

dBc

MITSUBISHI
ELECTRIC

TYPICAL CHARACTERISTICS

P1dB,GLP vs. f

Po,IM3 vs. Pin

MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGFS45V2527

2.5~2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET

46

VDS=10(V)
IDS=6.5(A)

45

44

43

42

41

2.45 2.5 2.55 2.6 2.65 2.7 2.75

42

VDS=10(V)
IDS=6.5(A)
f1=2.700(GHz)

40

f2=2.705(GHz)

38

P1dB

GLP

FREQUENCY f (GHz)

Po

16

15

14

13

12

11

20

10

0

50

VDS=10 (V)

45

IDS=6.5(A)
f=2.6 (GHz)

40

35

30

25

20

15

15 20 25 30 35

Pout

η

add

INPUT POWER Pin (dBm)

70

60

50

40

30

20

10

0

Po, ηadd vs. Pin

36

34

32

30

28

26

24

14 16 18 20 22 24 26 28 30 32 34

INPUT POWER Pin (dBm S.C.L.)

IM3

S Parameters ( Tc=25˚C, VDS=10V, IDS=6.5A )

f

(GHz)

2.40

2.45

2.50

2.55

2.60

2.65

2.70

2.75

2.80

S11

Magn. Angle(deg) Magn. Angle(deg) Magn. Angle(deg) Magn. Angle(deg)

0.57

0.54

0.52

0.45

0.39

0.30

0.19

0.18

0.30

165
152
138
123
106

82
37

-25

-73

S21 S12 S22

4.25

4.35

4.40

4.49

4.60

4.68

4.68

4.57

4.29

-10

-20

-30

-40

-50

-60

-70

S-Parameter (TYP.)

50
36
21

6

-10

-28

-47

-66

-86

0.03

0.04

0.04

0.04

0.04

0.04

0.04

0.05

0.04

15

0

-21

-35

-60

-73

-89

-117

-133

0.15

0.13

0.12

0.12

0.12

0.13

0.12

0.13

0.10

-24

-37

-60

-82

-111

-134

-156
176
160

MITSUBISHI
ELECTRIC