Mitsubishi MGFS45V2325 Datasheet

MITSUBISHI SEMICONDUCTOR <GaAs FET>

Output power at 1dB gain

compression

IM3

MGFS45V2325

2.3~2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET

DESCRIPTION

The MGFS45V2325 is an internally impedance matched
GaAs power FET especially designed for use in 2.3~2.5
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.

FEATURES

Class A operation
Internally matched to 50 (Ω) system
High output power

P1dB=30W (TYP.) @f=2.3~2.5GHz

High power gain

GLP=12dB (TYP.) @f=2.3~2.5GHz

High power added efficiency

ηadd=45% (TYP.) @f=2.3~2.5GHz

Loe distortion [item -51]

IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L.

APPLICATION

item 01 : 2.3~2.5GHz band power amplifier
item 51 : 2.3~2.5GHz band digital radio communication

QUALITY GRADE

IG

RECOMMENDED BIAS CONDITIONS

VDS=10V
ID=6.5A
RG=25Ω

OUTLINE DRAWING

R1.2

GF-38

Until : millimeters (inches)

24±0.3 (0.945±0.012)

(0.024±0.006)

0.6±0.15

20.4±0.2 (0.803±0.008)

16.7 (0.658)

(1) GATE
(2) Source (FLANGE)
(3) DRAIN

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Symbol

VGDO
VGSO
ID
IGR Reverse gate current
IGF
PT
Tch
Tstg

*1 : Tc=25°C

Gate to drain voltage -15 V
Gate to source voltage
Drain current

Forward gate current
Total power dissipation
Channel temperature
Storage temperature

Parameter Ratings Unit

V
A

mA
mA

°C

*1

175

-65 ~ +175 °C

-15
22

-61
76
88 W

Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (i)placement of
substitutive, auxiliary circuits, (ii)use of non-flammable
material or (iii)prevention against any malfunction or mishap.

ELECTRICAL CHARACTERISTICS (Ta=25°C)

Symbol Parameter

VGS (off)
P1dB
GLP

ID
ηadd

Rth (ch-c)

*1 : item -51, 2 tone test, Po=34.5dBm Single Carrier Level, f=2.3, 2.4, 2.5GHz,∆f=5MHz
*2 : Channel to case

Saturated drain current VDS=3V, ID=60mA V

Linear power gain 12 — dB
Drain current

Power added efficiency 45
3rd order IM distortion
Thermal resistance

VDS=10V, ID(RF off)=6.5A, f=2.3~2.5GHz

*1

∆Vf method

*2

Test conditions

< Keep safety first in your circuit designs! >

Limits

Min. Typ. Max

-5
—

—
—
—

1.7

44
11

—
—

-42
—

——
45 dBm

7.5 A

-45
— °C/W

Unit

%

dBc

MITSUBISHI
ELECTRIC

41

4243444546

2.25

2.3

2.35

2.4

2.45

2.5

2.55

Frequency (GHz)

11

1213141516

2025303540

45

50

1520253035

40

Input power Pin (dBm)

1020304050

60

70

28

30

323436

38

40

15202530Input power Pin (dBm S.C.L.)

-60

-50

-40

-30

-20

-10

0

TYPICAL CHARACTERISTICS

MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGFS45V2325

2.3~2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET

VDS=10V
IDS=6.5A

VDS=10V
IDS=6.5A
f1=2.500GHz
f2=2.505GHz

P1dB,GLP vs. Freq.

P1dB

GLP

Po,IM3 vs. Pin

Po

VDS=10V
IDS=6.5A
f=2.4GHz

Po,ηadd vs. Pin

Po

ηadd

IM3

S Parameters ( Tc=25˚C, VDS=10V, IDS=6.5A )

S-Parameter (TYP.)

f

(GHz)

2.20

2.25

2.30

2.35

2.40

2.45

2.50

2.55

2.60

S11

Magn. Angle(deg) Magn. Angle(deg) Magn. Angle(deg) Magn. Angle(deg)

0.36

0.39

0.40

0.39

0.36

0.30

0.24

0.21

0.28

-168
170
150
132
112

87
53

1

-48

S21 S12 S22

4.71

4.70

4.68

4.68

4.68

4.68

4.64

4.52

4.28

88
71
54
38
21

3

-14

-34

-54

0.036

0.037

0.038

0.040

0.041

0.041

0.043

0.044

0.043

47
29
10

-7

-26

-45

-63

-85

-103

0.30

0.26

0.23

0.22

0.22

0.23

0.24

0.25

0.25

-10

-27

-45

-66

-86

-105

-125

-141

-158

MITSUBISHI
ELECTRIC