Mitsubishi MGFS45V2123 Datasheet

MITSUBISHI SEMICONDUCTOR <GaAs FET>

Output power at 1dB gain

compression

IM3

MGFS45V2123

2.1~2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET

DESCRIPTION

The MGFS45V2123 is an internally impedance matched
GaAs power FET especially designed for use in 2.1~2.3
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.

FEATURES

Class A operation
Internally matched to 50 (Ω) system
High output power

P1dB=30W (TYP.) @f=2.1~2.3GHz

High power gain

GLP=12dB (TYP.) @f=2.1~2.3GHz

High power added efficiency

ηadd=45% (TYP.) @f=2.1~2.3GHz

Loe distortion [item -51]

IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L.

APPLICATION

item 01 : 2.1~2.3GHz band power amplifier
item 51 : 2.1~2.3GHz band digital radio communication

QUALITY GRADE

IG

RECOMMENDED BIAS CONDITIONS

VDS=10V
ID=6.5A
RG=25Ω

OUTLINE DRAWING

R1.2

GF-38

Until : millimeters (inches)

24±0.3 (0.945±0.012)

(0.024±0.006)

0.6±0.15

20.4±0.2 (0.803±0.008)

16.7 (0.658)

(1) GATE
(2) Source (FLANGE)
(3) DRAIN

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Symbol

VGDO
VGSO
ID
IGR Reverse gate current
IGF
PT
Tch
Tstg

*1 : Tc=25°C

Gate to drain voltage -15 V
Gate to source voltage
Drain current

Forward gate current
Total power dissipation
Channel temperature
Storage temperature

Parameter Ratings Unit

V
A

mA
mA

°C

*1

175

-65 ~ +175 °C

-15
22

-61
76
88 W

Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (i)placement of
substitutive, auxiliary circuits, (ii)use of non-flammable
material or (iii)prevention against any malfunction or mishap.

ELECTRICAL CHARACTERISTICS (Ta=25°C)

Symbol Parameter

VGS (off)
P1dB
GLP

ID
ηadd

Rth (ch-c)

*1 : item -51, 2 tone test, Po=34.5dBm Single Carrier Level, f=2.1, 2.2, 2.3GHz,∆f=5MHz
*2 : Channel to case

Saturated drain current VDS=3V, ID=60mA V

Linear power gain 12 — dB
Drain current

Power added efficiency 45
3rd order IM distortion
Thermal resistance

VDS=10V, ID(RF off)=6.5A, f=2.1~2.3GHz

*1
*2

∆Vf method

Test conditions

< Keep safety first in your circuit designs! >

Limits

Min. Typ. Max

-5
—

—
—
—

1.7

44
11

—
—

-42
—

——
45 dBm

7.5 A

-45
— °C/W

Unit

%

dBc

MITSUBISHI
ELECTRIC

Frequency (GHz)

41

42

43

44

45

46

2.05

2.10

2.15

2.20

2.25

2.30

2.35

12

13

14

15

16

17

IDS=6.5A

202530

35404550152025303540Input power Pin (dBm)

102030

405060

70

28303234363840

1517192123252729Input power Pin (dBm S.C.L.)

-60

-50

-40

-30

-20

-10

0

TYPICAL CHARACTERISTICS

MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGFS45V2123

2.1~2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET

VDS=10V

VDS=10V
IDS=6.5A
f1=2.300GHz
f2=2.305GHz

P1dB,GLP vs. Freq.

P1dB

GLP

Po,IM3 vs. Pin

Po

VDS=10V
IDS=6.5A
f=2.2GHz

Po, ηadd vs. Pin

Po

ηadd

IM3

S Parameters ( Tc=25˚C, VDS=10V, IDS=6.5A )

S-Parameter (TYP.)

f

(GHz)

2.00

2.05

2.10

2.15

2.20

2.25

2.30

2.35

2.40

S11

Magn. Angle(deg) Magn. Angle(deg) Magn. Angle(deg) Magn. Angle(deg)

0.31

0.26

0.27

0.31

0.35

0.37

0.38

0.36

0.32

-34

-77

-120

-153

-178
161
143
126
107

S21 S12 S22

4.76

4.96

5.02

4.99

4.88

4.79

4.69

4.62

4.56

148
129
109

90
73
56
39
22

5

0.031

0.032

0.035

0.035

0.034

0.034

0.035

0.036

0.037

123

99
76
53
31
17

-4

-22

-39

0.39

0.34

0.30

0.28

0.29

0.30

0.33

0.36

0.40

17

-2

-26

-51

-72

-92

-109

-123

-134

MITSUBISHI
ELECTRIC