MITSUBISHI MGFS45A2527B User Manual

< L/S band internally matched power GaAs FET >

MGFS45A2527B

2.5 – 2.7 GHz BAND / 32W

DESCRIPTION

The MGFS45V2527B is an internally impedance-matched

OUTLINE DRAWING

GaAs power FET especially designed for use in 2.5 – 2.7
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.

FEATURES

Class A operation

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.
N
I

.

M

N

9

I

7

M

0

0

.

.

0

2

(

24.0±0.3(0.945±0.012)

Internally matched to 50(ohm) system
 High output power
P1dB=32W (TYP.) @f=2.5 – 2.7GHz
 High power gain
GLP=12.0dB (TYP.) @f=2.5 – 2.7GHz
 High power added efficiency
P.A.E.=40% (TYP.) @f=2.5 – 2.7GHz
 Low distortion [item -51]
IM3=-45dBc (TYP.) @Po=34.5dBm S.C.L

APPLICATION

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8

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0

8

0

0

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0

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2

2

0

±

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5

0

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±

1

5

3

±

8

±

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0

6

4

0

.

.

.

(

8

0

7

(

1

)
.
N
I

.

M

N

9

I

7

M

0

0

.

.

0

2

(

20.4±0.2(0.803±0.008)

 item 01 : 2.5 – 2.7 GHz band power amplifier
 item 51 : 2.5 – 2.7 GHz band digital radio communication

QUALITY

 GG

RECOMMENDED BIAS CONDITIONS

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6
1
0
.

4

0
.
0

±

4
±

4
5

1
6
.
3

)

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5

0

5

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0

4

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0

1

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 VDS=10V  ID=6.5A  RG=25ohm

GF-51

Absolute maximum ratings (Ta=25C)

Symbol Parameter Ratings Unit

VGDO
VGSO Gate to source breakdown voltage -10 V
PT *1 Total power dissipation 107 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C

*1 : Tc=25C

Electrical characteristics

Gate to drain

breakdown voltage -20 V

(Ta=25C)

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.

Symbol Parameter Test conditions Limits Unit

VGS(off)

P1dB

Gate to source cut-off voltage VDS=3V,ID=84mA - - -5 V

Output power at 1dB gain compression

GLP Linear Power Gain 11 12 - dB

VDS=10V,ID(RF off)=6.5A
f=2.5 – 2.7GHz

ID Drain current - 7.5 - A

P.A.E. Power added efficiency - 40 - %

IM3 *2 3rd order IM distortion

Rth(ch-c) *3

Thermal resistance delta Vf method - 1.2 1.4

*2 :item -51 ,2 tone test,Po=34.5dBm Single Carrier Level ,f=2.5,2.6,2.7GHz,delta f=5MHz
*3 :Channel-case

Min. Typ. Max.

44 45 - dBm

-42 -45 - dBc

Unit : millimeters (inches)

1

0.6±0.15
(0.024±0.006)

3

15.8(0.622)

GATE

1

SOURCE(FLANGE)

2

DRAIN

3

C/W



2

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±

1

4

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2

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8
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4
9
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Publication Date : Apr., 2011

1

< L/S band internally matched power GaAs FET >

14.5

qy

qy

MGFS45A2527B

2.5 – 2.7 GHz BAND / 32W

MGFS45A2527B TYPICAL CHARACTERISTICS

50

45

40

35

30

Po(dBm)
PAE(%)
GAIN(dB)

f=2.5GHz

18

17

16

15

14

25

Po(dBm)　P.A.E（％）

20

15

13

Gp(dB)

12

11

Pout , PAE , GAIN vs. Pin

50

45

40

35

30

25

Po(dBm)　P.A.E（ ％）

20

15

f=2.6GHz

Po(dBm)
PAE(%)
GAIN(dB)

18

17

16

15

14

13

Gp(dB)

12

11

50

45

40

35

30

25

Po(dBm)　P.A.E（％）

20

15

f= 2 .7 GHz

Po(dBm )
PAE (% )
GAIN(dB)

18

17

16

15

14

13

Gp(dB)

12

11

10

5

0

15 20 25 30 35 40

Pin(dBm)

GAIN vs. f IM3 vs. f

14

13.5

13

GLP(dB )

12.5

12

11.5

Ｖｄｓ=10(Ｖ)　Ｉｄｓ(ＲＦOFF）=6.5(Ａ)

10

9

8

10

5

0

15 20 25 30 35 40

Pin(dBm)

10

9

8

10

5

0

15 20 25 30 35 40

Pin(dBm)

10

9

8

P1dB vs. f

P1dB(dBm)

45.5

44.5

43.5

45

44

Ｖｄｓ=10(Ｖ)　Ｉｄ ｓ(ＲＦOFF）=6 .5(Ａ)

-51

-50

-49

-48

IM3(dBC)

-47

Ｖｄｓ=10(Ｖ)　Ｉｄｓ(ＲＦOFF）=6 .5(Ａ)

-46

11

2.42.52.62.72.8

Freq(GHz)

Publication Date : Apr., 2011

43

2.4 2.5 2.6 2.7 2.8

Freq(GHz)

2

-45

2.4 2.5 2.6 2.7 2.8

Freq(GHz)