MITSUBISHI MGFS45A2527B User Manual

< L/S band internally matched power GaAs FET >

MGFS45A2527B

2.5 – 2.7 GHz BAND / 32W

DESCRIPTION

The MGFS45V2527B is an internally impedance-matched

OUTLINE DRAWING

GaAs power FET especially designed for use in 2.5 – 2.7
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.

FEATURES

Class A operation

)
.
N
I

.

M

N

9

I

7

M

0

0

.

.

0

2

(

24.0±0.3(0.945±0.012)

Internally matched to 50(ohm) system
 High output power
P1dB=32W (TYP.) @f=2.5 – 2.7GHz
 High power gain
GLP=12.0dB (TYP.) @f=2.5 – 2.7GHz
 High power added efficiency
P.A.E.=40% (TYP.) @f=2.5 – 2.7GHz
 Low distortion [item -51]
IM3=-45dBc (TYP.) @Po=34.5dBm S.C.L

APPLICATION

)
8

)

0

8

0

0

.

0

0

.

2

2

0

±

.

.

5

0

0

±

1

5

3

±

8

±

.

0

6

4

0

.

.

.

(

8

0

7

(

1

)
.
N
I

.

M

N

9

I

7

M

0

0

.

.

0

2

(

20.4±0.2(0.803±0.008)

 item 01 : 2.5 – 2.7 GHz band power amplifier
 item 51 : 2.5 – 2.7 GHz band digital radio communication

QUALITY

 GG

RECOMMENDED BIAS CONDITIONS

)
6
1
0
.

4

0
.
0

±

4
±

4
5

1
6
.
3

)

.

5

0

5

(

0

4

.

.

0

1

(

 VDS=10V  ID=6.5A  RG=25ohm

GF-51

Absolute maximum ratings (Ta=25C)

Symbol Parameter Ratings Unit

VGDO
VGSO Gate to source breakdown voltage -10 V
PT *1 Total power dissipation 107 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C

*1 : Tc=25C

Electrical characteristics

Gate to drain

breakdown voltage -20 V

(Ta=25C)

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.

Symbol Parameter Test conditions Limits Unit

VGS(off)

P1dB

Gate to source cut-off voltage VDS=3V,ID=84mA - - -5 V

Output power at 1dB gain compression

GLP Linear Power Gain 11 12 - dB

VDS=10V,ID(RF off)=6.5A
f=2.5 – 2.7GHz

ID Drain current - 7.5 - A

P.A.E. Power added efficiency - 40 - %

IM3 *2 3rd order IM distortion

Rth(ch-c) *3

Thermal resistance delta Vf method - 1.2 1.4

*2 :item -51 ,2 tone test,Po=34.5dBm Single Carrier Level ,f=2.5,2.6,2.7GHz,delta f=5MHz
*3 :Channel-case

Min. Typ. Max.

44 45 - dBm

-42 -45 - dBc

Unit : millimeters (inches)

1

0.6±0.15
(0.024±0.006)

3

15.8(0.622)

GATE

1

SOURCE(FLANGE)

2

DRAIN

3

C/W



2

5
0

2

.

.

0

0

±

±

1

4

.

.

0

2

)
8
0
0
.
0

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4
9
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(

Publication Date : Apr., 2011

1

< L/S band internally matched power GaAs FET >

14.5

qy

qy

MGFS45A2527B

2.5 – 2.7 GHz BAND / 32W

MGFS45A2527B TYPICAL CHARACTERISTICS

50

45

40

35

30

Po(dBm)
PAE(%)
GAIN(dB)

f=2.5GHz

18

17

16

15

14

25

Po(dBm)　P.A.E（％）

20

15

13

Gp(dB)

12

11

Pout , PAE , GAIN vs. Pin

50

45

40

35

30

25

Po(dBm)　P.A.E（ ％）

20

15

f=2.6GHz

Po(dBm)
PAE(%)
GAIN(dB)

18

17

16

15

14

13

Gp(dB)

12

11

50

45

40

35

30

25

Po(dBm)　P.A.E（％）

20

15

f= 2 .7 GHz

Po(dBm )
PAE (% )
GAIN(dB)

18

17

16

15

14

13

Gp(dB)

12

11

10

5

0

15 20 25 30 35 40

Pin(dBm)

GAIN vs. f IM3 vs. f

14

13.5

13

GLP(dB )

12.5

12

11.5

Ｖｄｓ=10(Ｖ)　Ｉｄｓ(ＲＦOFF）=6.5(Ａ)

10

9

8

10

5

0

15 20 25 30 35 40

Pin(dBm)

10

9

8

10

5

0

15 20 25 30 35 40

Pin(dBm)

10

9

8

P1dB vs. f

P1dB(dBm)

45.5

44.5

43.5

45

44

Ｖｄｓ=10(Ｖ)　Ｉｄ ｓ(ＲＦOFF）=6 .5(Ａ)

-51

-50

-49

-48

IM3(dBC)

-47

Ｖｄｓ=10(Ｖ)　Ｉｄｓ(ＲＦOFF）=6 .5(Ａ)

-46

11

2.42.52.62.72.8

Freq(GHz)

Publication Date : Apr., 2011

43

2.4 2.5 2.6 2.7 2.8

Freq(GHz)

2

-45

2.4 2.5 2.6 2.7 2.8

Freq(GHz)

< L/S band internally matched power GaAs FET >

MGFS45A2527B

2.5 – 2.7 GHz BAND / 32W

MGFS45A2528B S-parameters( Ta=25deg.C , VDS=10(V),IDS=6.5(A) )

S1 1 S21 S12 S22

Freq

2.00 0.88 74 .01 1.42 -115.63 0.01 -79.30 0 .79 1 01.57

2.05 0.87 67 .63 1.56 -124.88 0.01 -86.26 0 .77 95.64

2.10 0.85 60 .94 1.72 -134.47 0.01 -102. 29 0.75 8 9.25

2.15 0.82 53 .50 1.91 -1 44.48 0. 01 -111. 11 0.73 8 3. 20

2.20 0.79 45 .38 2.12 -1 55.53 0. 01 -129. 00 0.70 7 5. 83

2.25 0.76 36 .25 2.38 -1 67.27 0. 01 -140. 42 0.67 6 7. 92

2.30 0.72 26 .06 2.66 -1 79.79 0. 01 -159. 19 0.64 5 8. 86

2.35 0.66 14 .95 2.99 166.21 0.02 17 6.25 0.59 47.67

2.40 0.59 1.86 3.3 4 1 50.86 0.02 15 5.14 0.54 34.08

2.45 0.51 -13.16 3.70 133. 43 0.02 12 6.07 0.48 16.39

2.50 0.40 -31.23 4.01 115. 11 0.02 98 .68 0.43 - 5.01

2.55 0.28 -51.53 4.24 95.76 0.02 71.43 0.39 -31.79

2.60 0.16 -78.16 4.32 75.62 0.02 43.53 0.38 -61.12

2.65 0.07 -146.41 4.27 55.31 0.02 15.4 1 0 .40 -87.8 7

2.70 0.12 127.83 4.09 35. 45 0.03 -1 1.45 0.45 -1 09.18

2.75 0.22 95 .47 3.80 16.42 0.03 -33.34 0.49 -125.33

2.80 0.30 74 .56 3.51 -1.65 0.03 -54.63 0.53 -137.70

2.85 0.38 56 .47 3.18 -19.06 0.03 -7 5.33 0.57 -1 47.32

2.90 0.45 40 .38 2.88 -35.49 0.03 -9 4.35 0.60 -1 54.95

2.95 0.51 24 .35 2.58 -51.73 0.03 - 111.68 0 .62 -161 .21

3.00 0.58 8.80 2.3 0 - 67.16 0.03 - 126.90 0 .64 -166 .56

This S-Parameter data show measurements performed on each single-ended FET

(mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)

Publication Date : Apr., 2011

3

< L/S band internally matched power GaAs FET >

MGFS45A2527B

2.5 – 2.7 GHz BAND / 32W

Keep safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor product s better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.

•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.

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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.

Publication Date : Apr., 2011

4