MITSUBISHI MGFS44V2735 User Manual

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< L/S band internally matched power GaAs FET >

MGFS44V2735

2.7 – 3.5 GHz BAND / 24W

DESCRIPTION

The MGFS44V2735 is an internally impedance-matched
GaAs power FET especially designed for use in 2.7 - 3.5
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.

FEATURES

Class A operation
Internally matched to 50(ohm) system
 High output power
P1dB=24W (TYP.) @f=2.7 - 3.5GHz
 High power gain
GLP=12.0dB (TYP.) @f=2.7 - 3.5GHz
 High power added efficiency
P.A.E.=36% (TYP.) @f=2.7 - 3.5GHz
 Low distortion [item -51]
IM3=-45dBc (TYP.) @Po=33.5dBm S.C.L

APPLICATION

 item 01 : 2.7 - 3.5 GHz band power amplifier
 item 51 : 2.7 - 3.5 GHz band digital radio communication

QUALITY

 IG

RECOMMENDED BIAS CONDITIONS

 VDS=10V  ID=6.4A  RG=25ohm

OUTLINE

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GF-38

24 +/- 0.3

(1)

20.4 +/- 0.2

16.7

0.6 +/- 0.15

(3)

(1) gate
(2) source(flange)
(3)drain

Absolute maximum ratings (Ta=25C)

Symbol Parameter Ratings Unit

VGDO
VGSO Gate to source breakdown voltage -15 V
ID Drain current 20 A
IGR Reverse gate current -60 mA
IGF Forward gate current 126 mA
PT *1 Total power dissipation 125 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C

*1 : Tc=25C

Gate to drain

breakdown voltage -15 V

Electrical characteristics

(Ta=25C)

Symbol Parameter Test conditions Limits Unit

IDSS
gm

VGS(off)
P1dB
GLP Linear Power Gain 11 12 - dB

ID Drain current - 6.4 - A

P.A.E. Power added efficiency - 36 - %
IM3 *2 3rd order IM distortion

Rth(ch-c) *3

Saturated drain current VDS=3V,VGS=0V - 18
Transconductance VDS=3V,ID=6.4A - 6.5
Gate to source cut-off voltage VDS=3V,ID=160mA -2 - -5 V

Output power at 1dB gain compression

Thermal resistance delta Vf method - 1 1.2

*2 :item -51 ,2 tone test,Po=33.5dBm Single Carrier Level ,f=2.7,3.1,3.5GHz,delta f=10MHz
*3 :Channel-case

VDS=10V,ID(RF off)=6.4A
f=2.7 – 3.5GHz

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.

Min. Typ. Max.

- A

- S

43 44 - dBm

-42 -45 - dBc

(2)

C/W

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Publication Date : Apr., 2011

1

< L/S band internally matched power GaAs FET >

MGFS44V2735

2.7 – 3.5 GHz BAND / 24W

MGFS44V2735 TYPICAL CHARACTERISTICS

MGFS44V2735 S-parameters

( Ta=25deg.C , VDS=10(V),IDS=6.4(A) )

Publication Date : Apr., 2011

2