MITSUBISHI MGFS36E2527 User Manual
MITSUBISHI SEMICONDUCTOR
MGFS36E2527
Specifications are subject to change without notice. 2.5-2.7GHz HBT HYBRID IC
DESCRIPTION
Outline Drawing
4.5 1.0
MGFS36E2527 is a GaAs RF amplifier designed
for WiMAX CPE.
FEATURES
• InGaP HBT Device
• 6V Operation
• 27dBm Linear Output Power
4.5
36E
2527
(Lot No.)
• 33dB Linear Gain
• Integrated Output Power Detector
• Integrated 1-bit 19dB Step Attenuator
• 50ohms Matched
• Surface Mount Package
• RoHS Compliant Package
APPLICATIONS
IEEE802.16-2004, IEEE802.16e-2005
10 89
1 2 3
67
54
(X-ray Top View)
1
2
3
4
5
6
7
8
9
10
Pin
Vc (Vcb)
Vc (Vc1)
Vc (Vc2)
Vc (Vc3)
Pout
Po_det
GND
Vref
Vcont
DIM IN mm
FUNCTIONAL BLOCK DIAGRAM
Pin
Vc1
Vc2
1000pF
Vc3
1000pF
1000pF
Pout
Vcont
(0/3V)
Po_det
Vcb
1000pF
Bias Circuit
33kohms
Vref
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the
possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give
due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary, circuits,
(ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORP.
(1/7) January-2008
MITSUBISHI SEMICONDUCTOR
MGFS36E2527
Specifications are subject to change without notice. 2.5-2.7GHz HBT HYBRID IC
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Symbol Parameter Conditions* Value Unit
Vc1, Vc2
Vc3, Vcb
Vref Reference Voltage Pout≤27.0dBm 3 V
Vcont ATT Control Voltage Pout≤27.0dBm 3.3 V
Ic1 80 mA
Ic2 Operation Current Pout≤27.0dBm 250 mA
Ic3 900 mA
Pin Input Power Pout≤27.0dBm 5 dBm
- Duty Cycle Pout≤27.0dBm 50 %
Collector Supply Voltage
Pout≤27.0dBm 8 V
Tc(op) Operation Temperature Pout≤27.0dBm -30~+85
Tstg Storage Temperature - -40~+125
*NOTE : Zin=Zout=50Ω
Each maximum rating is guaranteed independently.
Please take care that MGFS36E2527 is operated under these conditions at the worst
case on your terminal.
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C)
Symbol Parameter Test Conditions* Limits Unit
Min Typ Max
f Frequency - 2.5 2.7 GHz
Gp Gain Vc=6V, Vref=2.85V 33 dB
ηt
EVM EVM 64QAM OFDM Modulation 2.5 %
Vdet Power Detector Voltage Duty Cycle < 50% 2.0 V
ATT Control Gain Step Vcont=3V 19 dB
Ileak Leakage Current Vc=6V, Vref=0V 10
*NOTE : Zin=Zout=50Ω
Efficiency Pout=27dBm 12 %
µA
ESD RATING - Class 1A (HBM)
MOISTURE SENSITIVITY LEVEL - Level 3
THERMAL RESISTANCE : 30°C/W
MITSUBISHI ELECTRIC CORP.
(2/7) January-2008
MITSUBISHI SEMICONDUCTOR
MGFS36E2527
Specifications are subject to change without notice. 2.5-2.7GHz HBT HYBRID IC
PERFORMANCE DATA
WiMAX OFDM 64QAM signal input. Ta=25degC.
Output Power vs. Input Power Efficiency vs. Output Power
30
Vc=6V
Vref=2.85V
Vcont=0V
25
20
Output Power (dBm)
15
10
-20 -15 -10 -5 0
Input Power (dBm)
2.5GHz
2.6GHz
2.7GHz
20
Vc=6V
18
Vref=2.85V
Vcont=0V
16
14
12
10
8
Efficiency (%)
6
4
2
0
10 15 20 25 30
Output Power (dBm)
EVM vs. Output Power Detector Voltage vs. Output Power
6.0
Vc=6V
5.5
Vref=2.85V
5.0
Vcont=0V
4.5
4.0
3.5
3.0
2.5
EVM (%)
2.0
1.5
1.0
0.5
0.0
10 15 20 25 30
Output Power (dBm)
2.5GHz
2.6GHz
2.7GHz
3.0
Vc=6V
Vref=2.85V
2.5
Vcont=0V
2.0
1.5
Vdet (V)
1.0
0.5
0.0
10 15 20 25 30
Output Power (dBm)
Attenuation Performance
40
Vc=6V
Vref=2.85V
30
20
S21 (dB)
10
0
2.0 2.2 2.4 2.6 2.8 3.0
Frequency (GHz)
Vcont=0V
Vcont=3V
2.5GHz
2.6GHz
2.7GHz
2.5GHz
2.6GHz
2.7GHz
MITSUBISHI ELECTRIC CORP.
(3/7) January-2008
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