MITSUBISHI MGFL48V1920 User Manual
< L/S band internally matched power GaAs FET >
MGFL48V1920
1.9 – 2.0 GHz BAND / 60W
DESCRIPTION
The MGFL48V1920 is a 60W push-pull type GaAs power FET
especially designed for use in 1.9 - 2.0 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees
high reliability.
FEATURES
Push-pull configuration
High output power
Pout=60W (TYP.) @f=1.9 - 2.0GHz
High power gain
GLP=11.5dB (TYP.) @f=1.9 - 2.0GHz
High power added efficiency
P.A.E.=45% (TYP.) @f=1.9 - 2.0GHz
APPLICATION
item 01 : 1.9 - 2.0 GHz band power amplifier
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
VDS=12V ID=4.0A RG=20ohm for each gate
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO
VGSO Gate to source breakdown voltage -10 V
PT *1 Total power dissipation 10 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1 : Tc=25C
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
VGS(off)
P2dB
GLP Linear Power Gain 10 11.5 - dB
ID Drain current - 11 15 A
P.A.E. Power added efficiency
Rth(ch-c) *2
*2 :Channel-case
Gate to drain
Gate to source cut-off voltage VDS=3V,ID=17.3mA -1 - -4 V
Output power at 2dB gain compression
Thermal resistance delta Vf method - 1.0 1.4
breakdown voltage -20 V
(Ta=25C)
VDS=12V,ID(RF off)=4.0A
f=1.9 - 2.0GHz
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Min. Typ. Max.
47 48 - dBm
- 45 - %
C/W
Publication Date : Apr., 2011
1
< L/S band internally matched power GaAs FET >
MGFL48V1920
1.9 – 2.0 GHz BAND / 60W
MGFL45V1920 TYPICAL CHARACTERISTICS
Pout , PAE vs. Pin
Test Condition : Idq=4A,Ta=25deg.C
IMD vs. Pout
Test Condition : Vds=12V,Idq=4A,Ta=25deg.C
2-tone test , Δf=5MHz
Publication Date : Apr., 2011
2
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