MITSUBISHI MGFL45V1920A User Manual

< L/S band internally matched power GaAs FET >

MGFL45V1920A

1.9 – 2.0 GHz BAND / 32W

DESCRIPTION

The MGFL45V1920A is an internally impedance-matched

OUTLINE DRAWING

GaAs power FET especially designed for use in 1.9 - 2.0
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.

FEATURES

Class A operation

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24.0±0.3(0.945±0.012)

Internally matched to 50(ohm) system
 High output power
P1dB=32W (TYP.) @f=1.9 - 2.0GHz
 High power gain
GLP=13.0dB (TYP.) @f=1.9 - 2.0GHz
 High power added efficiency
P.A.E.=45% (TYP.) @f=1.9 - 2.0GHz
 Low distortion [item -51]
IM3=-45dBc (TYP.) @Po=34.5dBm S.C.L

APPLICATION

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20.4±0.2(0.803±0.008)

 item 01 : 1.9 - 2.0 GHz band power amplifier
 item 51 : 1.9 - 2.0 GHz band digital radio communication

QUALITY

 IG

RECOMMENDED BIAS CONDITIONS

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 VDS=10V  ID=6.5A  RG=25ohm

GF-51

Absolute maximum ratings (Ta=25C)

Symbol Parameter Ratings Unit

VGDO
VGSO Gate to source breakdown voltage -15 V
ID Drain current 22 A
IGR Reverse gate current -61 mA
IGF Forward gate current 76 mA
PT *1 Total power dissipation 100 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C

*1 : Tc=25C

Gate to drain

breakdown voltage -15 V

Electrical characteristics

(Ta=25C)

Symbol Parameter Test conditions Limits Unit

VGS(off)

P1dB

Gate to source cut-off voltage VDS=3V,ID=60mA - - -5 V

Output power at 1dB gain compression

GLP Linear Power Gain 12 13 - dB
ID Drain current - 7.5 - A

P.A.E. Power added efficiency - 45 - %

IM3 *2 3rd order IM distortion

VDS=10V,ID(RF off)=6.5A
f=1.9 - 2.0GHz

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.

Min. Typ. Max.

44 45 - dBm

-42 -45 - dBc

Unit : millimeters (inches)

1

0.6±0.15
(0.024±0.006)

3

15.8(0.622)

GATE

1

SOURCE(FLANGE)

2

DRAIN

3

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Rth(ch-c) *3

Thermal resistance delta Vf method - - 1.5

*2 :item -51 ,2 tone test,Po=34.5dBm Single Carrier Level ,f=1.9,2.0GHz,delta f=5MHz
*3 :Channel-case

Publication Date : Apr., 2011

1

C/W



< L/S band internally matched power GaAs FET >

A

MGFL45V1920A

1.9 – 2.0 GHz BAND / 32W

MGFL45V1920A TYPICAL CHARACTERISTICS

46

45

VDS=10V
IDS=6.5

44

43

Output power P1dB (dBm)

42

P1dB,GLP vs. Freq.

P1dB

17

16

15

GLP

14

13

50

VDS=10V
IDS=6.5A
f=1.9GHz

45

40

35

30

Output power Po (dBm)

Linear power gain GLP (dB)

25

Po , P.A.E. vs. Pin

Po

P.A.E.

70

60

50

40

30

Power added efficienc y P.A.E. (%)

20

41

1.85 1.90 1.95 2.00 2.05

40

VDS=10V
IDS=6.5A

38

f1=1.900GHz
f2=1.905GHz

36

34

32

Output power Po (dBm S.C.L.)

30

28

15 17 19 21 23 25 27 29

Frequency (GHz)

Po,IM3 vs. Pin

Po

IM3

Input power Pin (dBm S.C.L.)

12

0

-10

-20

-30

-40

-50

-60

20

10 15 20 25 30 35

IM3 (dBc)

Input power Pin (dBm)

MGFL45V1920A S-parameters ( Ta=25deg.C , VDS=10(V),IDS=6.5(A) )

fS11 S21 S12 S22

(GHz) Magn. Angle(deg) Magn. Angle(deg) Magn. Angle(deg) Magn. Angle(deg)

1.70

1.75

1.80

1.85

1.90

1.95

2.00

2.05

2.10

2.15

0.55 53 4.18 -151 0.03 -176 0.49 66

0.41 27 4.76 -170 0.03 161 0.44 51

0.29 -16 5.21 167 0.03 135 0.37 33

0.28 -78 5.43 145 0.04 108 0.28 11

0.38 -124 5.34 122 0.04 84 0.20 - 21

0.49 -152 5.07 102 0.04 59 0.16 - 61

0.57 -170 4.74 84 0.04 41 0.16 -98

0.62 178 4.48 70 0.03 25 0.19 -120

0.65 166 4.23 54 0.03 7 0.23 -136

0.66 156 4.05 40 0.03 -10 0.26 -147

2.20 0.66 146 3.95 26 0.03 -24 0.30 -154

S-Paramete r (TYP. )

10

Publication Date : Apr., 2011

2