MITSUBISHI MGFK44A4045 User Manual
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< X/Ku band internally matched power GaAs FET >
MGFK44A4045
14.0 – 14.5 GHz BAND / 25W
DESCRIPTION
The MGFK44A4045 is an internally impedance-matched
GaAs power FET especially designed for use in 14.0 – 14.5
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Internally impedance matched
High output power
P1dB=44dBm (TYP.) @f=14.0 – 14.5GHz
High linear power gain
GLP=6.0dB (TYP.) @f=14.0 – 14.5GHz
APPLICATION
For use in 14.0 – 14.5 GHz band amplifiers
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=6.0A RG=25ohm
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO
VGSO Gate to source breakdown voltage -10 V
ID Drain current 20 A
IGR Reverse gate current -72 mA
IGF Forward gate current 144 mA
PT *1 Total power dissipation 100 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1 : Tc=25C
Gate to drain
breakdown voltage -15 V
OUTLINE
24 +/- 0.3
N
I
M
2
2
.
0
-
/
+
4
.
7
1
N
I
M
2
4
.
0
-
/
+
3
.
4
GF-38
R1. 2
2
.
0
-
/
+
0
.
8
4
.
1
(1)
20.4 +/- 0.2
16.7
0.6 +/- 0.15
(3)
(1) gate
(2) source(flange)
(3)drain
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Electrical characteristics
(Ta=25C)
Symbol Parameter Test conditions Limits Unit
IDSS
gm
VGS(off)
P1dB
GLP Linear Power Gain 5 6 - dB
PAE Power added efficiency
Rth(ch-c) *2
Saturated drain current VDS=3V,VG=0V - 16 - A
Transconductance VDS=0V,ID=6.0A - 6 - S
Gate to source cut-off voltage VDS=3V,ID=80mA -1 -1.5 -4 V
Output power at 1dB gain compression
Thermal resistance delta Vf method - 1.2 1.5
VDS=10V,ID(RF off)=6.0A
f=14.0 – 14.5GHz
*2 : Channel-case
Min. Typ. Max.
43 44 - dBm
- 17 - %
(2)
C/W
uni t : m
5
2
.
0
.
0
0
-
/
-
/
+
+
4
.
1
.
2
0
Publication Date : Apr., 2011
1
< X/Ku band internally matched power GaAs FET >
MGFK44A4045
14.0 – 14.5 GHz BAND / 25W
MGFK44A4045 TYPICAL CHARACTERISTICS
f = 14.0GHz
Pout, Glp, PAE, Id, Ig vs. Pin
f = 14.2GHz
f = 14.5GHz
Test Condition : Vds=10V,Idq=6.0A, Rg=50ohm,Ta=25deg.C
f = 14.0GHz f = 14.2GHz
Pout , IM3 vs. Pin
f = 14.5GHz
Test Condition : Vds=10V,Idq=6.0A,Rg=50ohm,Ta=25deg.C
Publication Date : Apr., 2011
2-tone test,Δf=10MHz
2
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