MITSUBISHI MGFK44A4045 User Manual

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< X/Ku band internally matched power GaAs FET >

MGFK44A4045

14.0 – 14.5 GHz BAND / 25W

DESCRIPTION

The MGFK44A4045 is an internally impedance-matched
GaAs power FET especially designed for use in 14.0 – 14.5
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.

FEATURES

Internally impedance matched
 High output power
P1dB=44dBm (TYP.) @f=14.0 – 14.5GHz
 High linear power gain
GLP=6.0dB (TYP.) @f=14.0 – 14.5GHz

APPLICATION

 For use in 14.0 – 14.5 GHz band amplifiers

QUALITY GRADE

 IG

RECOMMENDED BIAS CONDITIONS

 VDS=10V  ID=6.0A  RG=25ohm

Absolute maximum ratings (Ta=25C)

Symbol Parameter Ratings Unit

VGDO
VGSO Gate to source breakdown voltage -10 V
ID Drain current 20 A
IGR Reverse gate current -72 mA
IGF Forward gate current 144 mA
PT *1 Total power dissipation 100 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C

*1 : Tc=25C

Gate to drain

breakdown voltage -15 V

OUTLINE

24 +/- 0.3

N

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M

2

2

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0

-

/

+
4

.

7

1

N

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2

4

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+
3

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4

GF-38

R1. 2

2

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0

-

/

+
0

.

8

4

.

1

(1)

20.4 +/- 0.2

16.7

0.6 +/- 0.15

(3)

(1) gate
(2) source(flange)
(3)drain

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.

Electrical characteristics

(Ta=25C)

Symbol Parameter Test conditions Limits Unit

IDSS
gm

VGS(off)
P1dB
GLP Linear Power Gain 5 6 - dB

PAE Power added efficiency

Rth(ch-c) *2

Saturated drain current VDS=3V,VG=0V - 16 - A
Transconductance VDS=0V,ID=6.0A - 6 - S
Gate to source cut-off voltage VDS=3V,ID=80mA -1 -1.5 -4 V

Output power at 1dB gain compression

Thermal resistance delta Vf method - 1.2 1.5

VDS=10V,ID(RF off)=6.0A
f=14.0 – 14.5GHz

*2 : Channel-case

Min. Typ. Max.

43 44 - dBm

- 17 - %

(2)

C/W



uni t : m

5

2

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0

.

0

0

-

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+

+

4

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1

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2

0

Publication Date : Apr., 2011

1

< X/Ku band internally matched power GaAs FET >

MGFK44A4045

14.0 – 14.5 GHz BAND / 25W

MGFK44A4045 TYPICAL CHARACTERISTICS

f = 14.0GHz

Pout, Glp, PAE, Id, Ig vs. Pin

f = 14.2GHz

f = 14.5GHz

Test Condition : Vds=10V,Idq=6.0A, Rg=50ohm,Ta=25deg.C

f = 14.0GHz f = 14.2GHz

Pout , IM3 vs. Pin

f = 14.5GHz

Test Condition : Vds=10V,Idq=6.0A,Rg=50ohm,Ta=25deg.C

Publication Date : Apr., 2011

2-tone test,Δf=10MHz

2

< X/Ku band internally matched power GaAs FET >

MGFK44A4045

14.0 – 14.5 GHz BAND / 25W

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor product s better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.

•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
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Keep safety first in your circuit designs!

Notes regarding these materials

© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.

Publication Date : Apr., 2011

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