MITSUBISHI MGFK41A4045 User Manual

< X/Ku band internally matched power GaAs FET >

MGFK41A4045

14.0 – 14.5 GHz BAND / 12W

DESCRIPTION

The MGFK41A4045 is an internally impedance-matched
GaAs power FET especially designed for use in 14.0 – 14.5
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.

FEATURES

Internally impedance matched
 High output power
P1dB=41dBm (TYP.) @f=14.0 – 14.5GHz
 High linear power gain
GLP=7.0dB (TYP.) @f=14.0 – 14.5GHz

APPLICATION

 For use in 14.0 – 14.5 GHz band amplifiers

QUALITY GRADE

 IG

RECOMMENDED BIAS CONDITIONS

 VDS=10V  ID=3.0A  RG=50ohm

Absolute maximum ratings (Ta=25C)

Symbol Parameter Ratings Unit

VGDO
VGSO Gate to source breakdown voltage -10 V
ID Drain current 11 A
IGR Reverse gate current -36 mA
IGF Forward gate current 72 mA
PT *1 Total power dissipation 68.2 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C

*1 : Tc=25C

Electrical characteristics

Symbol Parameter Test conditions Limits Unit

IDSS
gm

VGS(off)
P1dB
GLP Linear Power Gain 6 7 - dB

PAE Power added efficiency

Rth(ch-c) *2

*2 : Channel-case

Gate to drain

Saturated drain current VDS=3V,VG=0V - 8 - A
Transconductance VDS=0V,ID=3.0A - 4 - S
Gate to source cut-off voltage VDS=3V,ID=42mA -1 -1.5 -4 V

Output power at 1dB gain compression

Thermal resistance delta Vf method - 1.8 2.2

breakdown voltage -15 V

(Ta=25C)

VDS=10V,ID(RF off)=3.0A
f=14.0 – 14.5GHz

OUTLINE DRAWING

2MIN

(2)

12.9 +/-0.2

2MIN

1.6

4.5 +/-0.4

0.2

GF-8

Uni t : millimeters

21.0 +/-0.3

(1)

0.6 +/-0.15

(3)

10.7

17.0 +/-0.2

12.0

(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN

(2)

R-1.6

11.3

0.1

2.6 +/ - 0.2

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.

Min. Typ. Max.

40 41 - dBm

- 25 - %
C/W



Publication Date : Apr., 2011

1

< X/Ku band internally matched power GaAs FET >

A

A

A

MGFK41A4045

14.0 – 14.5 GHz BAND / 12W

MGFK41A4045 TYPICAL CHARACTERISTICS

45

40

35

30

25

20

15

10

Pout(dBm), Glp(dB), PAE(%), Id(A), Ig(m

5

0

f = 14.0GHz f = 14.25GHz f = 14.5GHz

Pout
Gain
Id RF
Ig RF
PAE

Pout, Glp, PAE, Id, Ig vs. Pin

45

40

35

30

25

20

15

10

Pout(dBm), Glp(dB), PAE(%), Id(A), Ig(m

Pout
Gain
Id RF
Ig RF
PAE

5

0

45

40

35

30

25

20

15

10

Pout(dBm), Glp(dB), PAE(%), Id(A), Ig(m

Pout
Gain
Id RF
Ig RF
PAE

5

0

-5
20 25 30 35 40

Test Condition

Vds=10V,Idq=3.0A, Rg=50ohm,Ta=25deg.C

Pin(dBm)

35

30

25

Pout(dBm)(S.C.L)

20

f = 14.0GHz f = 14.25GHz f = 14.5GHz

Pout
IM3

-10

-20

-30

-40

-5
20 25 30 35 40

Pin(dBm)

-5
20 25 30 35 40

Pin(dBm)

Pout , IM3 vs. Pin

35

30

25

IM3(dBc)

Pout(dBm)(S.C.L)

20

Pout
IM3

-10

-20

-30

-40

35

30

25

IM3(dBc)

Pout(dBm)(S.C.L)

20

Pout
IM3

-10

-20

-30
IM3(dBc)

-40

15

15 20 25 30

Test Condition
Vds=10V,Idq=3.0A,Rg=50ohm,Ta=25deg.C

2-tone test,Δf=10MHz

Publication Date : Apr., 2011

Pin(dBm)(S.C.L)

-50

15

15 20 25 30

Pin(dBm)(S.C.L)

-50

15

15 20 25 30

Pin(dBm)(S.C.L)

-50

2

< X/Ku band internally matched power GaAs FET >

MGFK41A4045

14.0 – 14.5 GHz BAND / 12W

MGFK41A4045 S-parameters( Ta=25deg.C , VDS=10(V),IDS=3(A) )

f S11 S21 S12 S22

(GHz) Mag. Ang(deg.) Mag. Ang(deg.) Mag. Ang(deg.) Mag. Ang(deg.)

13.00 0.738 -103.4 1.278 34.7 0.057 14.1 0.668 -81.0

13.10 0.716 -109.9 1.349 26.6 0.060 7.6 0.649 -87.3

13.20 0.693 -116.7 1.427 18.2 0.064 0.8 0.628 -93.7

13.30 0.665 -123.8 1.517 9.1 0.068 -6.4 0.609 -101.0

13.40 0.633 -132.2 1.607 -0.1 0.074 -13.6 0.588 -109.0

13.50 0.593 -140.9 1.705 -10.3 0.081 -22.2 0.559 -118.7

13.60 0.546 -151.8 1.809 -23.6 0.087 -33.8 0.521 -131.2

13.70 0.493 -162.0 1.896 -34.7 0.095 -42.9 0.482 -141.7

13.80 0.434 -172.4 1.976 -46.0 0.102 -53.5 0.434 -153.0

13.90 0.369 175.1 2.059 -58.0 0.109 -63.7 0.383 -167.1

14.00 0.303 161.4 2.132 -70.3 0.118 -75.4 0.324 177.1

14.10 0.238 144.2 2.192 -83.2 0.122 -88.5 0.266 159.0

14.20 0.176 120.7 2.241 -96.3 0.127 -100.8 0.215 135.8

14.30 0.118 83.1 2.268 -110.1 0.131 -113.0 0.176 104.0

14.40 0.106 28.9 2.263 -124.6 0.130 -126.2 0.166 64.0

14.50 0.156 -12.7 2.217 - 138.9 0.130 -138.3 0.179 28.6

14.60 0.225 -38.3 2.134 - 153.0 0.126 -151.4 0.216 0.6

14.70 0.281 -57.4 2.018 -167.1 0.121 -163.3 0.266 -17.8

14.80 0.335 -72.0 1.885 179.9 0.113 -173.9 0.318 -32.7

14.90 0.381 -86.1 1.750 166.9 0.105 176.0 0.353 -46.8

15.00 0.413 -98.3 1.616 154.8 0.098 166.5 0.368 -59.2

S Parameters (TYP.)

Publication Date : Apr., 2011

3

< X/Ku band internally matched power GaAs FET >

MGFK41A4045

14.0 – 14.5 GHz BAND / 12W

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor product s better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.

•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
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Keep safety first in your circuit designs!

Notes regarding these materials

© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.

Publication Date : Apr., 2011

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