MITSUBISHI MGFK41A4045 User Manual

< X/Ku band internally matched power GaAs FET >

MGFK41A4045

14.0 – 14.5 GHz BAND / 12W

DESCRIPTION

The MGFK41A4045 is an internally impedance-matched
GaAs power FET especially designed for use in 14.0 – 14.5
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.

FEATURES

Internally impedance matched
 High output power
P1dB=41dBm (TYP.) @f=14.0 – 14.5GHz
 High linear power gain
GLP=7.0dB (TYP.) @f=14.0 – 14.5GHz

APPLICATION

 For use in 14.0 – 14.5 GHz band amplifiers

QUALITY GRADE

 IG

RECOMMENDED BIAS CONDITIONS

 VDS=10V  ID=3.0A  RG=50ohm

Absolute maximum ratings (Ta=25C)

Symbol Parameter Ratings Unit

VGDO
VGSO Gate to source breakdown voltage -10 V
ID Drain current 11 A
IGR Reverse gate current -36 mA
IGF Forward gate current 72 mA
PT *1 Total power dissipation 68.2 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C

*1 : Tc=25C

Electrical characteristics

Symbol Parameter Test conditions Limits Unit

IDSS
gm

VGS(off)
P1dB
GLP Linear Power Gain 6 7 - dB

PAE Power added efficiency

Rth(ch-c) *2

*2 : Channel-case

Gate to drain

Saturated drain current VDS=3V,VG=0V - 8 - A
Transconductance VDS=0V,ID=3.0A - 4 - S
Gate to source cut-off voltage VDS=3V,ID=42mA -1 -1.5 -4 V

Output power at 1dB gain compression

Thermal resistance delta Vf method - 1.8 2.2

breakdown voltage -15 V

(Ta=25C)

VDS=10V,ID(RF off)=3.0A
f=14.0 – 14.5GHz

OUTLINE DRAWING

2MIN

(2)

12.9 +/-0.2

2MIN

1.6

4.5 +/-0.4

0.2

GF-8

Uni t : millimeters

21.0 +/-0.3

(1)

0.6 +/-0.15

(3)

10.7

17.0 +/-0.2

12.0

(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN

(2)

R-1.6

11.3

0.1

2.6 +/ - 0.2

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.

Min. Typ. Max.

40 41 - dBm

- 25 - %
C/W



Publication Date : Apr., 2011

1

< X/Ku band internally matched power GaAs FET >

A

A

A

MGFK41A4045

14.0 – 14.5 GHz BAND / 12W

MGFK41A4045 TYPICAL CHARACTERISTICS

45

40

35

30

25

20

15

10

Pout(dBm), Glp(dB), PAE(%), Id(A), Ig(m

5

0

f = 14.0GHz f = 14.25GHz f = 14.5GHz

Pout
Gain
Id RF
Ig RF
PAE

Pout, Glp, PAE, Id, Ig vs. Pin

45

40

35

30

25

20

15

10

Pout(dBm), Glp(dB), PAE(%), Id(A), Ig(m

Pout
Gain
Id RF
Ig RF
PAE

5

0

45

40

35

30

25

20

15

10

Pout(dBm), Glp(dB), PAE(%), Id(A), Ig(m

Pout
Gain
Id RF
Ig RF
PAE

5

0

-5
20 25 30 35 40

Test Condition

Vds=10V,Idq=3.0A, Rg=50ohm,Ta=25deg.C

Pin(dBm)

35

30

25

Pout(dBm)(S.C.L)

20

f = 14.0GHz f = 14.25GHz f = 14.5GHz

Pout
IM3

-10

-20

-30

-40

-5
20 25 30 35 40

Pin(dBm)

-5
20 25 30 35 40

Pin(dBm)

Pout , IM3 vs. Pin

35

30

25

IM3(dBc)

Pout(dBm)(S.C.L)

20

Pout
IM3

-10

-20

-30

-40

35

30

25

IM3(dBc)

Pout(dBm)(S.C.L)

20

Pout
IM3

-10

-20

-30
IM3(dBc)

-40

15

15 20 25 30

Test Condition
Vds=10V,Idq=3.0A,Rg=50ohm,Ta=25deg.C

2-tone test,Δf=10MHz

Publication Date : Apr., 2011

Pin(dBm)(S.C.L)

-50

15

15 20 25 30

Pin(dBm)(S.C.L)

-50

15

15 20 25 30

Pin(dBm)(S.C.L)

-50

2