Mitsubishi MGFK39V4045 Datasheet
14.0~14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET
DESCRIPTION
The MGFK39V4045 is an internally impedance matched
GaAs power FET especially designed for use in 14.0~14.5
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Internally impedance matched
High output power
P1dB=8W (TYP.) @f=14.0~14.5GHz
High linear power gain
GLP=5.5dB (TYP.) @f=14.0~14.5GHz
High power added efficiency
ηadd =20%(TYP.) @f=14.0~14.5GHz, P1dB
APPLICATION
For use in 14.0~14.5GHz band amplifiers
QUALITY GRADE
IG
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFK39V4045
RECOMMENDED BIAS CONDITIONS
VDS=10V
ID=2.4A
Refer to Bias Procedure
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol Parameter Ratings Unit
VGDO Gate to drain voltage -15 V
IGR Reverse gate current
IGF Forward gate current 36 mA
PT Total power dissipation
Tch Channel temperature
Tstg Storage temperature
*1 : Tc=25˚C
*1
-15VGSO Gate to source voltage
6.0ID Drain current
-18
42.8 W
175
-65 ~ +175
V
A
mA
˚C
˚C
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Symbol Parameter
IDSS
gm
VGS (off)
P1dB
GLP Linear power gain 5.5
ηadd
Rth (ch-c) Thermal resistance
*1 : Channel to case
Saturated drain current VDS=3V, VDS=0V 4.0 A
Transconductance VDS=3V, ID=2.4A 2.0 S
Gate to source cut-off voltage VDS=3V, ID=20mA — -5 V
Output power at 1dB gain
compression
VDS=10V, ID=2.4A, f=14.0~14.5GHz
Power added efficiency
∆Vf method
*1
Test conditions
Min. Typ. Max
—
1.2
-2
38.5
4.5
—
—
Limits
6.0
—
39.0 dBm
20
—
—
—
—
3.5
˚C/W
Unit
dB
%
MITSUBISHI
ELECTRIC
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