MITSUBISHI MGFK38A3745 User Manual
< X/Ku band internally matched power GaAs FET >
MGFK38A3745
13.75 – 14.50 GHz BAND / 6W
DESCRIPTION
The MGFK38A3745 is an internally impedance-matched
GaAs power FET especially designed for use in 13.75 – 14.50
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB=6W (TYP.) @f=13.75 – 14.50GHz
High linear power gain
GLP=8.0dB (TYP.) @f=13.75 – 14.50GHz
High power added efficiency
P.A.E.=30% (TYP.) @f=13.75 – 14.50GHz
APPLICATION
13.75 – 14.50 GHz band power amplifiers
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=1.5A RG=100ohm
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO
VGSO Gate to source breakdown voltage -10 V
PT *1 Total power dissipation 37.5 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1 : Tc=25C
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
VGS(off)
P1dB
GLP Linear Power Gain 7 8 - dB
ID Drain current 1.8 A
PAE Power added efficiency
Rth(ch-c) *2
*2 : Channel-case
Gate to drain
Gate to source cut-off voltage VDS=3V,ID=21mA -1 -1.5 -4 V
Output power at 1dB gain compression
Thermal resistance delta Vf method - 3.6 4
breakdown voltage -15 V
(Ta=25C)
VDS=10V,ID(RF off)=1.5A
f=13.75 – 14.50GHz
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Min. Typ. Max.
37 38 - dBm
- 30 - %
C/W
Publication Date : Apr., 2011
1
< X/Ku band internally matched power GaAs FET >
MGFK38A3745
13.75 – 14.50 GHz BAND / 6W
MGFK38A3745 TYPICAL CHARACTERISTICS
f = 13.75GHz
Pout, Glp, PAE, Id, Ig vs. Pin
f = 14.125GHz
f = 14.5GHz
Test Condition : Vds=10V,Idq=1.5A, Rg=100ohm,Ta=25deg.C
f = 13.75GHz f = 14.125GHz
IM3, IM5 vs. Pin
f = 14.50GHz
Test Condition : Vds=10V,Idq=1.5A,Rg=100ohm,Ta=25deg.C
2-tone test,Δf=10MHz
Publication Date : Apr., 2011
2
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