MITSUBISHI MGFK25V4045 User Manual
< X/Ku band internally matched power GaAs FET >
MGFK25V4045
14.0 – 14.5 GHz BAND / 0.3W
DESCRIPTION
The MGFK25V4045 is an internally impedance-matched
GaAs power FET especially designed for use in 14.0 – 14.5
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Internally matched to 50(ohm) system
Flip-chip mounted
High output power
P1dB=0.3W (TYP.) @f=14.0 – 14.5GHz
High linear power gain
GLP=9.0dB (TYP.) @f=14.0 – 14.5GHz
High power added efficiency
P.A.E.=25% (TYP.) @f=14.0 – 14.5GHz
APPLICATION
14.0 – 14.5 GHz band power amplifiers
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS=8V ID=80mA Refer to Bias Procedure
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO
VGSO Gate to source breakdown voltage -15 V
ID Drain current 500 mA
IGR Reverse gate current -1 mA
IGF Forward gate current 1 mA
PT *1 Total power dissipation 2.7 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1 : Tc=25C
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
IDSS
gm
VGS(off)
P1dB
GLP Linear Power Gain 7 9 - dB
PAE Power added efficiency
Rth(ch-c) *2
*2 : Channel-case
Gate to drain
Saturated drain current VDS=3V,VGS=0V - 200 500 mA
Transconductance VDS=3V,ID=150mA - 100 - mS
Gate to source cut-off voltage VDS=3V,ID=1mA -2 - -5 V
Output power at 1dB gain compression
Thermal resistance delta Vf method - - 40
breakdown voltage -15 V
(Ta=25C)
VDS=8V,ID(RF off)=150mA
f=14.0 – 14.5GHz
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Min. Typ. Max.
23 26 - dBm
- 25 - %
C/W
Publication Date : Apr., 2011
1
< X/Ku band internally matched power GaAs FET >
MGFK25V4045
14.0 – 14.5 GHz BAND / 0.3W
MGFK25V4045 TYPICAL CHARACTERISTICS
Publication Date : Apr., 2011
2
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