Mitsubishi MGFC5218 Datasheet

PRELIMINARY

Notice : This is not a final specification
Some parametric limits are subject to change.

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

MGFC5218

K-Band 2-Stage Power Amplifier

DESCRIPTION

The MGFC5218 is a GaAs MMIC chip especially
designed for 18.0 ~ 19.0 GHz band High
Power Amplifier (MPA) .

FEATURES

RF frequency : 18.0 to 19.0 GHz

P1dB : ≥ 29.0 dBm(min.) @ 18.0 to 19.0 GHz

BLOCK DIAGRAM

Vg1

Vg2

Vd1

Vd2

In

Vd1

Vg1

Vg2

Vd1

Vd2

Chip size: 1940 µm x 2000 µm

Out

TARGET SPECIFICATIONS (Ta=25˚C)

Symbol

IDSS1
IDSS2

Vp1
Vp2

P1dB

Gain

Input Return Loss

Output Return Loss

IM3

Drain Saturation Current Vd=3.0V
Drain Saturation Current
Pinch Off Voltage Vd=3.0V,Id=0.6mA
Pinch Off Voltage Vd=3.0V,Id=1.2mA

Output Power at 1 dB
Compression Point

Gain
Input Return Loss
Output Return Loss

Inter Modulation Level

Parameter Test Conditions

f=18 - 20 GHz,
Vd1=Vd2=6.0V ,
Id1=360mA*,

Id2=720mA*

f=18 - 20 GHz,
Vd1=Vd2=6.0V ,
Id1=360mA*,
Id2=720mA*

Pout=TBD
*:Ids at RF off

Limits

Min. Typ. Max. Unit

720

1440

-2.0 -1.0

-2.0 -1.0

29.0

15.0

8.0

8.0

TBD

mA
mA

dBm

dB
dB
dB

dBc

V
V

MITSUBISHI
ELECTRIC

as of July '98

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

PRELIMINARY

Notice : This is not a final specification
Some parametric limits are subject to change.

K-Band 2-Stage Power Amplifier

DIE SIZE AND BOND PAD LOCATION(UNIT : µM)

MGFC5218

Vg1

(-0.2 to -1.0 V)

RF-in

Vg1

275

Vg2 (-0.2 to -1.0 V)

GND GND

GND

Vg2

130

990

975

1535

Vd1 Vd2

Vd1

Vd1

1940

Vd2

RF-out

GND

MITSUBISHI
ELECTRIC

as of July '98