Mitsubishi MGFC5217 Datasheet

PRELIMINARY

Notice : This is not a final specification Some parametric limits are subject to change.

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

MGFC5217

K-Band 2-Stage Power Amplifier

DESCRIPTION

The MGFC5217 is a GaAs MMIC chip especially designed for 18.0 ~ 19.0 GHz band Middle Power Amplifier (MPA) .

FEATURES

RF frequency : 18.0 to 19.0 GHz

P2dB : ≥ 25.5 dBm(TYP.) @ 18.0 to 19.0 GHz

BLOCK DIAGRAM

Vg1 Vg2

In Out

Vd1

Vd2

PHOTOGRAPH

TARGET SPECIFICATIONS (Ta=25˚C)

Symbol Parameter Test Conditions

IDSS1 Drain Saturation Current IDSS2 Drain Saturation Current

Vp1 Vp2

P3dB

Gain

Input Return Loss

Output Return Loss

IM3

Pinch Off Voltage Vd=3.0V,Id=0.032mA Pinch Off Voltage

Output Power at 3 dB Compression Point

Gain Input Return Loss Output Return Loss

Inter Modulation Level

Vd=3.0V

Vd=3.0V,Id=0.12mA -2.0

f=18.0-19.0 GHz, Vd1=Vd2=5V , Id1=40mA*,

Id2=180mA*

f=18.0-19.0 GHz, Vd1=Vd2=5V , Id1=40mA*,

* : Ids at RF off

Id2=180mA*

Limits

Min.

300 540 mA

-2.0 -1.0

Typ.

25.5

17.0

6.0

TBD

Max.

140 mA

-1.0

Unit

dBm

dB dB

dBc

V V

MITSUBISHI ELECTRIC

as of July '98

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

PRELIMINARY

Notice : This is not a final specification Some parametric limits are subject to change.

K-Band 2-Stage Power Amplifier

DIE SIZE AND BOND PAD LOCATION(UNIT : µM)

1820

MGFC5217

580

130

Vg2 (-0.2 to -1.0 V)

Vg1(-0.2 to -1.0 V)

GND GND

RF-in

GND

570

X Dimension : 1940(+60/-100)µm Y Dimension : 1000(+60/-100)µm

Vd1 Vd2

1570

1820

1940

UNIT:µm

GND

RF-out

GND

MITSUBISHI ELECTRIC

as of July '98

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