Mitsubishi MGFC5216 Datasheet

PRELIMINARY

Notice : This is not a final specification
Some parametric limits are subject to change.

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

MGFC5216

Q-Band 4-Stage Driver Amplifier

DESCRIPTION

The MGFC5216 is a GaAs MMIC chip especially
designed for 37.0 ~ 40.0 GHz band Middle
Power Amplifier (MPA) .

FEATURES

RF frequency : 37.0 to 43.0 GHz

Linear gain : 20dB (TYP.)@ 37 to 40 GHz
20 dB(TYP.) @ 40 to 43 GHz
P1dB : ≥ 16 dBm(min.) @ 37 to 40 GHz
≥ 16 dBm(target) @ 40 to 43 GHz

TARGET SPECIFICATIONS (Ta=25˚C)

Parameter Typical

Frequeny

Linear Gain 20 dB

P1dB

Input VSWR

Output VSWR

Vd
Vg

Chip Size 1.99x0.83

37

16 dBm

Vd12=4.5, Vd34=6 V

-0.3 V

40

2.2

2.0

UnitMin. Max.
GHz

mm

2

BLOCK DIAGRAM

Vg1

IN OUT

Vd1

Vg2

Vd2

Vg3

Vd3

Vg4

Vd4

PHOTOGRAPH

Specification Typical

Frequeny

Linear Gain 20 dB

P1dB

Input VSWR

Output VSWR

Vd
Vg

Chip Size 1.99x0.83

40

(16) dBm

Vd12=4.5, Vd34=6 V

-0.3 V

( ):Design Target (Now Evaluating)

43

2.4

3.0

UnitMin. Max.

GHz

mm

2

MITSUBISHI
ELECTRIC

as of July '98

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

PRELIMINARY

Notice : This is not a final specification
Some parametric limits are subject to change.

Q-Band 4-Stage Driver Amplifier

DIE SIZE AND BOND PAD LOCATION(UNIT : µM)

X=1.99 mm
Y=0.83 mm
Bond Pad Dimension=0.07 x 0.15 mm2 (RF)

0.1 x 0.1 mm2 (DC)

MGFC5216

(115.0, 445.0)

(630.0, 700.0)

(270.0, 700.0)

RFin RFout

(165.0, 125.5)

(990.0, 700.0)

(965.0, 130.0)

(515.0, 130.0)

Vg1 Vg2 Vg3 Vg4

RFin RFout

(1395.0, 700.0)

(1350.0, 130.0)

(1875.0, 445.0)

(1695.0, 130.0)

GND

Vd1 Vd2 Vd3 Vd4

MITSUBISHI
ELECTRIC

as of July '98