Mitsubishi MGFC5214 Datasheet
PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGFC5214
Q-Band 2-Stage Power Amplifier
DESCRIPTION
The MGFC5214 is a GaAs MMIC chip especially
designed for 37.0 ~ 40.0 GHz band High
Power Amplifier (HPA) .
FEATURES
RF frequency : 37.0 to 43.0 GHz
Linear gain : 12 dB (TYP.)@ 37 to 40 GHz
10 dB(TYP.) @ 40 to 43 GHz
P1dB : ≥ 23 dBm(min.) @ 37 to 40 GHz
≥ 23 dBm(target) @ 40 to 43 GHz
TARGET SPECIFICATIONS (Ta=25˚C)
Parameter Typical
Frequeny
Linear Gain 12 dB
P1dB
Input VSWR
Output VSWR
Vd
Vg
Chip Size 1.99x1.60
37
23 dBm
Vd1=4.5, Vd2=6 V
-0.2 V
40
2.0
2.0
UnitMin. Max.
GHz
mm
BLOCK DIAGRAM
Vg1 Vd1 Vg2 Vd2
GND
RFin
(Vg1) Vd1 Vg2 Vd2
GND
RFout
PHOTOGRAPH
2
Parameter Typical
Frequeny
Linear Gain 10 dB
P1dB
Input VSWR
Output VSWR
Vd
Vg
Chip Size 1.99x1.60
40
(23) dBm
Vd1=4.5, Vd2=6 V
-0.2 V
43
2.2
2.3
UnitMin. Max.
GHz
2
mm
MITSUBISHI
ELECTRIC
as of July '98
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
Q-Band 2-Stage Power Amplifier
DIE SIZE AND BOND PAD LOCATION(UNIT : µM)
X=1.99 mm
Y=1.60 mm
Bond Pad Dimension=0.07 x 0.15 mm2 (RF)
0.10 x 0.10 mm2 (DC)
MGFC5214
(125.0, 1470.0)
(105.0, 800.0)
(125.0, 130.0)
(0, 0)
GND
(680.0, 1470.0)
(505.0, 1470.0)
(505.0, 130.0)
(680.0, 130.0)
Vg1 Vd1 Vg2 Vd2
(1165.0, 1470.0)
(1165.0, 130.0)
(1555.0, 1470.0)
(1555.0, 130.0)
(1885.0, 800.0)
RFin RFout
GND
(Vg1) Vd1 Vg2 Vd2
MITSUBISHI
ELECTRIC
as of July '98
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