Mitsubishi MGFC5213 Datasheet
PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGFC5213
K-Band 2-Stage Power Amplifier
DESCRIPTION
The MGFC5213 is a GaAs MMIC chip especially
designed for 27.5 ~ 30.0 GHz band High
Power Amplifier (HPA) .
BLOCK DIAGRAM
FEATURES
RF frequency : 27.5 to 30.0 GHz
Linear gain : ≥ 9 dB
P1dB : ≥ 29 dBm
DC power : Vd = 5 V, Id1 + Id2 = 1080 mA
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Symbol
Vd1, Vd2
Vg1, Vg2
Id1
Id2
Pin
Ta
Tstg
Tmax
Drain supply voltage
Gate supply voltage
Drain current 1
Drain current 2
RF input power
Backside ambient temp.
Storage temp.
Maximum assembly temp.
Parameter
Vg1
Vg2
Vd1
Vd2
In Out
Vg1
Vd1
Vg2
Vd1 Vd2
Ratings
6
~
-3 0.5
480
960
25
~
-20
~
-65
+300
+70
+175
Units
V
V
mA
mA
dBm
˚C
˚C
˚C
ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)
Symbol Parameter
Gain
VSWR in
VSWR out
P1dB
Gain
Input VSWR
Output VSWR
Output power at 1 dB
compression point
Conditions
Vd = 5 V
Id1 = 360 mA
Id2 = 720 mA
(RF off)
f = 27.5, 30.0 GHz
Single tone
MITSUBISHI
ELECTRIC
Min.
9.0
29.0
Limits
Max.Typ.
3.0
3.0
Units
dB
-
-
dBm
as of July '98
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
K-Band 2-Stage Power Amplifier
DIE SIZE AND BOND PAD LOCATION(UNIT : µM)
MGFC5213
Vg
1
Vg
1
27
5
GN
D
RFin
GN
D
13
0
Vg
2
Vg
2
86
5
106
0
156
0
194
0
Vd
1
Vd
1
Vd
1
Vd
2
GN
D
RFout
GN
D
Vd
2
X Dimention 1.94 mm
Y Dimention 2.00 mm
MITSUBISHI
ELECTRIC
as of July '98
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