Mitsubishi MGFC5212 Datasheet
PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGFC5212
K-Band 2-Stage Power Amplifier
DESCRIPTION
The MGFC5212 is a GaAs MMIC chip especially
designed for 24.5 ~ 26.5 GHz band High
Power Amplifier (HPA) .
BLOCK DIAGRAM
FEATURES
RF frequency : 24.5 to 26.5 GHz
Linear gain : ≥ 13 dB
P1dB : ≥ 23 dBm
DC power : Vd = 5 V, Id1 + Id2 = 270 mA
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Symbol
Vd1, Vd2
Vg1, Vg2
Id1
Id2
Pin
Ta
Tstg
Tmax
Drain supply voltage
Gate supply voltage
Drain current 1
Drain current 2
RF input power
Backside ambient temp.
Storage temp.
Maximum assembly temp.
Parameter
Vg1 Vg2
In Out
Vd1
Ratings
-3 0.5
-20
-65
6
~
120
240
16
~
~
+300
Vd2
+70
+175
Units
V
V
mA
mA
dBm
˚C
˚C
˚C
ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)
Symbol Parameter
Gain
VSWR in
VSWR out
P1dB
IM3
Gain
Input VSWR
Output VSWR
Output power at 1 dB
compression point
Inter modulation level
Conditions
Vd = 5 V
Id1 = 90 mA
Id2 = 180 mA
(RF off)
f = 24.5, 26.5 GHz
Single tone
f = 24.5, 26.5 GHz
Tow tone(10MHz off)
Pout = 20 dBm
MITSUBISHI
ELECTRIC
Min.
13.0
23.0
(22.0)
Limits
Max.Typ.
2.2
2.2
Units
dB
-
-
dBm
dBc
as of July '98
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
K-Band 2-Stage Power Amplifier
DIE SIZE AND BOND PAD LOCATION(UNIT : µM)
1205
460
GND
950
RF in
Vg1 Vg2
MGFC5212
GND
GND
RF out
550
GND
Vd1
350
760
910
R(Vd1)
1210
1700
X Dimention 1.70 mm
Y Dimention 0.95 mm
R(Vd2) Vd2
GND
GND
550
MITSUBISHI
ELECTRIC
as of July '98
Loading...