Mitsubishi MGFC5211 Datasheet

PRELIMINARY

Notice : This is not a final specification
Some parametric limits are subject to change.

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

MGFC5211

K-Band 2-Stage Power Amplifier

DESCRIPTION

The MGFC5211 is a GaAs MMIC chip especially
designed for 21.2 ~ 23.6 GHz band High
Power Amplifier (HPA) .

BLOCK DIAGRAM

FEATURES

RF frequency : 21.2 to 23.6 GHz

Linear gain : ≥ 13 dB
P1dB : ≥ 23 dBm
DC power : Vd = 5 V, Id1 + Id2 = 270 mA

ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)

Symbol

Vd1, Vd2
Vg1, Vg2

Id1
Id2

Pin
Ta
Tstg
Tmax

Drain supply voltage
Gate supply voltage

Drain current 1
Drain current 2
RF input power
Backside ambient temp.
Storage temp.
Maximum assembly temp.

Parameter

Vg1 Vg2

In Out

Vd1

Ratings

-3 0.5

-20

-65

6
~

120

240
16

~
~

+300

Vd2

+70
+175

Units

V

V
mA
mA

dBm

˚C

˚C

˚C

ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)

Symbol Parameter

Gain
VSWR in
VSWR out
P1dB

IM3

Gain
Input VSWR

Output VSWR
Output power at 1 dB

compression point

Inter modulation level

Conditions

Vd = 5 V
Id1 = 90 mA
Id2 = 180 mA
(RF off)

f = 21.2, 23.6 GHz
Single tone

f = 21.2, 23.6 GHz
Tow tone(10MHz off)
Pout = 20 dBm

MITSUBISHI
ELECTRIC

Min.

13.0

23.0

(22.0)

Limits

Max.Typ.

2.2

2.2

Units

dB

-

-

dBm

dBc

as of July '98

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

PRELIMINARY

Notice : This is not a final specification
Some parametric limits are subject to change.

K-Band 2-Stage Power Amplifier

DIE SIZE AND BOND PAD LOCATION(UNIT : µM)

1410

620

950

GND

Vg1 Vg2

MGFC5211

GND
GND

550

RF in
GND

R(Vd1) Vd1

340

530

935

1380

R(Vd2) Vd2

1940

X Dimention 1.94 mm
Y Dimention 0.95 mm

GND

RF out

GND

550

MITSUBISHI
ELECTRIC

as of July '98