Mitsubishi MGFC5108 Datasheet
PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGFC5108
Ka-Band 3-Stage Self Bias Low Noise Amplifier
DESCRIPTION
The MGFC5108 is a GaAs MMIC chip
especially designed for 24.0 ~ 27.0 GHz band
Low Noise Amplifier.(LNA) .
FEATURES
RF frequency : 24.0 to 27.0 GHz
Super Low Noise NF=2.5dB (TYP.)
Single voltage operation
BLOCK DIAGRAM
Vd1 Vd3Vd2
In
Vg1 Vg3Vg2
PHOTOGRAPH
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol Parameter Values Unit
Vd Drain bias voltage 5 V
Out
Id Drain bias current 30 mA
Vg Gate bias voltage
Pin Maximum peak input power overdrive (Duration < 1sec) TBD dBm
Ta Operating temperature range TBD
-
TARGET SPECIFICATIONS (Ta=25˚C)
Symbol
Fop
Gain
Delta gain
NF
VSWR in Input VSWR
VSWR out
P1dB
Output IP3
Vd
Id Drain bias current mA
Vg
Parameter Test conditions
Operating frequency
range
Small signal gain
Small signal gain flatness
Noise figure
Output VSWR
Output power at 1 dB
compression
Output power at 3rdorder intercept point
Drain bias voltage
Gate bias voltage
Vd=5V,Id=30mA
Min.
24.0 27.0
17.0
On-wafer
measurement
Freq=22GHz
Limits
Typ.
18.0
1.5
2.5
(5)
TBD
(17)
TBD
5
30
No need
Max.
2.5:1
2.5:1
V
˚C
Unit
GHz
dB
dB
dB
dBm
dBm
V
V
MITSUBISHI
ELECTRIC
as of July '98
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
Ka-Band 3-Stage Self Bias Low Noise Amplifier
DIE SIZE AND BOND PAD LOCATION(UNIT : µm)
2194
1700
400
150
900
1400
150
150
MGFC5108
150
Vd1a Vd2a GND
Vd1b Vd2b GNDVd3b
GND
RF-in
GND
Vg1 Vg3
106
480
775
1430
Vd3a
Vg2
2300
GND
RF-out
GND
MITSUBISHI
ELECTRIC
as of July '98
Loading...