MITSUBISHI MGFC47V5864 User Manual
< C band internally matched power GaAs FET >
MGFC47V5864
5.8 – 6.4 GHz BAND / 50W
DESCRIPTION
The MGFC47V5864 is an internally impedance-matched
GaAs power FET especially designed for use in 5.8 – 6.4
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class AB operation
Internally matched to 50(ohm) system
High output power
P1dB=50W (TYP.) @f=5.8 – 6.4GHz
High power gain
GLP=9.5dB (TYP.) @f=5.8 – 6.4GHz
High power added efficiency
PAE=35% (TYP.) @f=5.8 – 6.4GHz
APPLICATION
Solid-state power amplifier for satellite earth-station
communication transmitter and VSAT
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=9.8A RG=10ohm
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO
VGSO Gate to source breakdown voltage -10 V
IGR Reverse gate current -130 mA
IGF Forward gate current 168 mA
PT *1 Total power dissipation 166 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1 : Tc=25C
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
VGS(off)
P1dB
GLP Linear Power Gain 8.5 9.5 - dB
ID Drain current - 11 - A
PAE Power added efficiency
Rth(ch-c) *2
*2 : Channel-case
Gate to drain
Gate to source cut-off voltage VDS=3V,ID=168mA -1 - -4 V
Output power at 1dB gain compression
Thermal resistance delta Vf method - 0.8 0.9
breakdown voltage -20 V
(Ta=25C)
VDS=10V,ID(RF off)=9.8A
f=5.8 – 6.4GHz
OUTLI NE DRA WING
.
N
I
M
2
2
.
2
.
0
0
-
/
-
/
+
+
4
4
.
.
0
.
2
7
8
1
.
N
I
M
2
5
0
.
2
.
0
0
-
-
/
/
+
+
1
.
3
.
0
2
GF-53
24+/-0.3
(3)
20.4+/-0.2
16.7
Unit : millimete rs
(1)
0.7+/-0.15
(2)
8
.
5
1
3
.
1
(1) : Gate
(2) : Sou rc e
(3) : D rain
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Min. Typ. Max.
46 47 - dBm
- 35 - %
C/W
.
x
a
m
7
.
4
Publication Date : Apr., 2011
1
< C band internally matched power GaAs FET >
)
)
)
MGFC47V5864
5.8 – 6.4 GHz BAND / 50W
MGFC47V5864 TYPICAL CHARACTERISTICS
10.5
10.0
P1dB vs. f GLP vs. f
48.0
47.5
9.5
GLP (dBm)
47.0
P1dB (dBm)
9.0
46.5
8.5
5.6 5.8 6.0 6.2 6.4 6.6
VDS=10V,IDS(RF off)=9.8A Pin=30dBm
46.0
5.65.86.06.26.46.6
Freqency (GHz)
VDS=10V,IDS(RF off)=9.8A
Freqency (GHz)
50
45
40
35
f = 5.8GHz f = 6.1GHz f = 6.4GHz
15
Pout
PAE
14
13
12
Pout , PAE ,Ids vs. Pin
50
45
40
35
Pout
PAE
15
14
13
12
50
45
40
35
Pout
PAE
15
14
13
12
30
25
20
Pout(dBm),PAE(%),Ids(A
15
10
5
0
GP
Ids
22 24 26 28 30 32 34 36 38 40 42
Publication Date : Apr., 2011
Pin(dBm)
11
10
9
8
7
6
5
30
25
Gp(dB)
20
Pout(dBm),PAE(%),Ids(A
15
10
5
0
GP
Ids
22 24 26 28 30 32 34 36 38 40 42
Pin(dBm)
11
10
9
8
7
6
5
30
25
Gp(dB)
20
Pout(dBm),PAE(%),Ids(A
15
10
5
0
GP
Ids
22 24 26 28 30 32 34 36 38 4 0 42
Pin(dBm)
11
10
Gp(dB)
9
8
7
6
5
2
Loading...