MITSUBISHI MGFC47A7785 User Manual

< C band internally matched power GaAs FET >

MGFC47A7785

7.7 – 8.5 GHz BAND / 47W

DESCRIPTION

The MGFC47A7785 is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES

Class A operation Internally matched to 50(ohm) system  High output power P1dB=46.7dBm (TYP.) @f=7.7 – 8.5GHz  High power gain GLP=5.7dB (TYP.) @f=7.7 – 8.5GHz  High power added efficiency PAE=30% (TYP.) @f=7.7 – 8.5GHz

APPLICATION

 Solid-state power amplifier for satellite earth-station

communication transmitter and VSAT

RECOMMENDED BIAS CONDITIONS

 VDS=10V  ID=9.8A  RG=10ohm

Absolute maximum ratings (Ta=25C)

Symbol Parameter Ratings Unit

VGDO VGSO Gate to source breakdown voltage -10 V IGR Reverse gate current -130 mA IGF Forward gate current 168 mA PT *1 Total power dissipation 168 W Tch Cannel temperature 175 C Tstg Storage temperature -65 to +175 C

*1 : Tc=25C

Electrical characteristics

Symbol Parameter Test conditions Limits Unit

VGS(off) P1dB GLP Linear Power Gain 4.7 5.7 - dB

ID Drain current - 11 - A

PAE Power added efficiency

IM3*2 3rd order IM distortion -39 -42 - dBc

Rth(ch-c) *3

*2 : Item -51,2 tone test,Po=35dBm Single Carrier Level,f=8.5GHz,Delta f=10MHz *3 : Channel-case

Gate to drain

Gate to source cut-off voltage VDS=3V,ID=168mA -1 - -4 V

Output power at 1dB gain compression

Thermal resistance delta Vf method - 0.8 0.9

breakdown voltage -20 V

(Ta=25C)

IDS=10V,ID(RF off)=9.8A f=7.7 – 8.5GHz

OUTLI NE DRA WING

. N

I M 2

. N

I M

5 0

GF-53

24+/-0.3

(3)

20.4+/-0.2

16.7

Unit : millimete rs

(1)

0.7+/-0.15

(2)

5 1

(1) : Gate (2) : Sou rc e (3) : D rain

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.

Min. Typ. Max.

45.7 46.7 - dBm

- 30 - %

C/W



a m

Publication Date : Apr., 2011

< C band internally matched power GaAs FET >

)

MGFC47A7785

7.7 – 8.5 GHz BAND / 47W

MGFC47A5864 S-parameters( Ta=25deg.C , VDS=10(V),IDS=8(A) )

S11,S22

Smith Chart

Z=50

0.5

0.2

0.0

-0.2

-0.5

1.0

5.0

1.00.2 0.5 2.0 5.0

-5.0

-1.0

S11 S22

S21,S22

Polar Ch art

5.0

4.0

2.0

3.0

｜S21｜

2.0

1.0

0.0

0.01

0.02

0.03

0.04

0.05

SCALE FOR

｜S12｜

SCALE FOR

-5 -4 -3 -2 -1 0 1 2 3 4 5

-2.0

-1

-2

-3

-4

-5

S21 S12

S Parameters(TYP.)

(GHz) MAG. ANG(deg.

S11 S21 S12 S 22

[MAG] [ANG] [MAG] [ANG] [MAG] [ANG]

5.60 0.702 -163.8 2.723 10.1 0.024 -23.0 0.225 -76.8

5.65 0.676 -175.6 2.836 0.3 0.027 -42.2 0.194 -86.4

5.70 0.646 171.6 2.932 -9.7 0.030 -57.8 0.164 -97.8

5.75 0.621 158.6 3.011 -19.8 0.036 -71.4 0.132 -111.2

5.80 0.595 144.8 3.072 -30.0 0.040 -82.1 0.106 -129.1

5.85 0.576 131.1 3.091 -40.0 0.044 -95.0 0.087 -148.9

5.90 0.556 116.8 3.108 -49.8 0.049 -105.8 0 .077 -175.9

5.95 0.540 102.9 3.111 -59.5 0.053 -117.2 0 .075 158.2

6.00 0.528 89.8 3.082 - 6 9.1 0.056 -126.1 0.083 135.8

6.05 0.518 76.5 3.061 - 7 8.5 0.059 -135.8 0.090 119.1

6.10 0.514 64.2 3.033 - 8 7.4 0.062 -144.8 0.102 106.2

6.15 0.510 51.9 2.999 - 9 6.3 0.066 -153.7 0.110 97.2

6.20 0.508 40.5 2.961 -104.9 0.068 -162.2 0.118 87.5

6.25 0.502 29.4 2.933 -113.6 0.072 -170.7 0.125 81.7

6.30 0.498 18.8 2.888 -121.8 0.074 -177.0 0.126 74.6

6.35 0.493 8.4 2.859 -130.1 0.074 174.0 0.128 68.4

6.40 0.486 -2.0 2.817 -138.4 0.076 166.5 0.130 62.4

6.45 0.483 - 11.9 2.793 -146.5 0.078 158.4 0.129 57.7

6.50 0.473 - 22.4 2.770 -154.6 0.081 152.1 0.126 52.8

6.55 0.471 - 33.0 2.751 -163.1 0.082 144.0 0.120 48.6

6.60 0.463 - 44.9 2.727 -171.4 0.084 135.6 0.111 44.0

This S-Parameter data show measurements performed on each single-ended FET

Publication Date : Apr., 2011

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