MITSUBISHI MGFC47A7785 User Manual

< C band internally matched power GaAs FET >

MGFC47A7785

7.7 – 8.5 GHz BAND / 47W

DESCRIPTION

The MGFC47A7785 is an internally impedance-matched
GaAs power FET especially designed for use in 7.7 – 8.5
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.

FEATURES

Class A operation
Internally matched to 50(ohm) system
 High output power
P1dB=46.7dBm (TYP.) @f=7.7 – 8.5GHz
 High power gain
GLP=5.7dB (TYP.) @f=7.7 – 8.5GHz
 High power added efficiency
PAE=30% (TYP.) @f=7.7 – 8.5GHz

APPLICATION

 Solid-state power amplifier for satellite earth-station

communication transmitter and VSAT

RECOMMENDED BIAS CONDITIONS

 VDS=10V  ID=9.8A  RG=10ohm

Absolute maximum ratings (Ta=25C)

Symbol Parameter Ratings Unit

VGDO
VGSO Gate to source breakdown voltage -10 V
IGR Reverse gate current -130 mA
IGF Forward gate current 168 mA
PT *1 Total power dissipation 168 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C

*1 : Tc=25C

Electrical characteristics

Symbol Parameter Test conditions Limits Unit

VGS(off)
P1dB
GLP Linear Power Gain 4.7 5.7 - dB

ID Drain current - 11 - A

PAE Power added efficiency

IM3*2 3rd order IM distortion -39 -42 - dBc

Rth(ch-c) *3

*2 : Item -51,2 tone test,Po=35dBm Single Carrier Level,f=8.5GHz,Delta f=10MHz
*3 : Channel-case

Gate to drain

Gate to source cut-off voltage VDS=3V,ID=168mA -1 - -4 V

Output power at 1dB gain compression

Thermal resistance delta Vf method - 0.8 0.9

breakdown voltage -20 V

(Ta=25C)

IDS=10V,ID(RF off)=9.8A
f=7.7 – 8.5GHz

OUTLI NE DRA WING

.
N

I
M
2

2

.

2

.

0

0

-

/

-

/

+

+

4

4

.

.

0

.

2

7

8

1

.
N

I
M

2

5
0

.

2

.

0

0

-

-

/

/

+

+

1

.

3

.

0

2

GF-53

24+/-0.3

(3)

20.4+/-0.2

16.7

Unit : millimete rs

(1)

0.7+/-0.15

(2)

8

.

5
1

3

.

1

(1) : Gate
(2) : Sou rc e
(3) : D rain

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.

Min. Typ. Max.

45.7 46.7 - dBm

- 30 - %

C/W



.

x

a
m

7

.

4

Publication Date : Apr., 2011

1

< C band internally matched power GaAs FET >

)

MGFC47A7785

7.7 – 8.5 GHz BAND / 47W

MGFC47A5864 S-parameters( Ta=25deg.C , VDS=10(V),IDS=8(A) )

S11,S22

Smith Chart

Z=50

Ω

0.5

0.2

0.0

-0.2

-0.5

1.0

5.0

1.00.2 0.5 2.0 5.0

-5.0

-1.0

S11
S22

S21,S22

Polar Ch art

5

5.0

4

4.0

2.0

3

2

3.0

｜S21｜

2.0

1

1.0

0.0

0.01

0.02

0.03

0.04

0.05

SCALE FOR

｜S12｜

SCALE FOR

-5 -4 -3 -2 -1 0 1 2 3 4 5

-2.0

0

-1

-2

-3

-4

-5

S21
S12

S Parameters(TYP.)

f

(GHz) MAG. ANG(deg.

S11 S21 S12 S 22

[MAG] [ANG] [MAG] [ANG] [MAG] [ANG]

5.60 0.702 -163.8 2.723 10.1 0.024 -23.0 0.225 -76.8

5.65 0.676 -175.6 2.836 0.3 0.027 -42.2 0.194 -86.4

5.70 0.646 171.6 2.932 -9.7 0.030 -57.8 0.164 -97.8

5.75 0.621 158.6 3.011 -19.8 0.036 -71.4 0.132 -111.2

5.80 0.595 144.8 3.072 -30.0 0.040 -82.1 0.106 -129.1

5.85 0.576 131.1 3.091 -40.0 0.044 -95.0 0.087 -148.9

5.90 0.556 116.8 3.108 -49.8 0.049 -105.8 0 .077 -175.9

5.95 0.540 102.9 3.111 -59.5 0.053 -117.2 0 .075 158.2

6.00 0.528 89.8 3.082 - 6 9.1 0.056 -126.1 0.083 135.8

6.05 0.518 76.5 3.061 - 7 8.5 0.059 -135.8 0.090 119.1

6.10 0.514 64.2 3.033 - 8 7.4 0.062 -144.8 0.102 106.2

6.15 0.510 51.9 2.999 - 9 6.3 0.066 -153.7 0.110 97.2

6.20 0.508 40.5 2.961 -104.9 0.068 -162.2 0.118 87.5

6.25 0.502 29.4 2.933 -113.6 0.072 -170.7 0.125 81.7

6.30 0.498 18.8 2.888 -121.8 0.074 -177.0 0.126 74.6

6.35 0.493 8.4 2.859 -130.1 0.074 174.0 0.128 68.4

6.40 0.486 -2.0 2.817 -138.4 0.076 166.5 0.130 62.4

6.45 0.483 - 11.9 2.793 -146.5 0.078 158.4 0.129 57.7

6.50 0.473 - 22.4 2.770 -154.6 0.081 152.1 0.126 52.8

6.55 0.471 - 33.0 2.751 -163.1 0.082 144.0 0.120 48.6

6.60 0.463 - 44.9 2.727 -171.4 0.084 135.6 0.111 44.0

This S-Parameter data show measurements performed on each single-ended FET

Publication Date : Apr., 2011

2

< C band internally matched power GaAs FET >

MGFC47A7785

7.7 – 8.5 GHz BAND / 47W

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor product s better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.

•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
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Keep safety first in your circuit designs!

Notes regarding these materials

© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.

Publication Date : Apr., 2011

3