MITSUBISHI MGFC47A4450 User Manual

< C band internally matched power GaAs FET >

MGFC47A4450

4.4 – 5.0 GHz BAND / 50W

DESCRIPTION

The MGFC47A4450 is an internally impedance-matched
GaAs power FET especially designed for use in 4.4 – 5.0
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.

FEATURES

Class AB operation
Internally matched to 50(ohm) system
 High output power
P1dB=50W (TYP.) @f=4.4 – 5.0GHz
 High power gain
GLP=10.5dB (TYP.) @f=4.4 – 5.0GHz
 High power added efficiency
PAE=40% (TYP.) @f=4.4 – 5.0GHz

APPLICATION

 Radio Link

RECOMMENDED BIAS CONDITIONS

 VDS=10V  ID=9.8A  RG=10ohm

Absolute maximum ratings (Ta=25C)

Symbol Parameter Ratings Unit

VGDO
VGSO Gate to source breakdown voltage -10 V
IGR Reverse gate current -130 mA
IGF Forward gate current 168 mA
PT *1 Total power dissipation 166 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C

*1 : Tc=25C

Electrical characteristics

Symbol Parameter Test conditions Limits Unit

VGS(off)
P1dB
GLP Linear Power Gain 9.5 10.5 - dB

ID Drain current - 11 - A

PAE Power added efficiency

Rth(ch-c) *2

*2 : Channel-case

Gate to drain

Gate to source cut-off voltage VDS=3V,ID=168mA -1 - -4 V

Output power at 1dB gain compression

Thermal resistance delta Vf method - 0.8 0.9

breakdown voltage -20 V

(Ta=25C)

VDS=10V,ID(RF off)=9.8A
f=4.4 – 5.0GHz

OUTLI NE DRA WING

.
N

I
M
2

2

.

2

.

0

0

-

/

-

/

+

+

4

4

.

.

0

.

2

7

8

1

.
N

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M

2

5
0

.

2

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0

0

-

-

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+

+

1

.

3

.

0

2

GF-53

24+/-0.3

(3)

20.4+/-0.2

16.7

Unit : millimete rs

(1)

0.7+/-0.15

(2)

8

.

5
1

3

.

1

(1) : Gate
(2) : Sou rc e
(3) : D rain

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.

Min. Typ. Max.

46 47 - dBm

- 40 - %
C/W



.

x

a
m

7

.

4

Publication Date : Apr., 2011

1

< C band internally matched power GaAs FET >

MGFC47A4450

4.4 – 5.0 GHz BAND / 50W

MGFC47A4450 TYPICAL CHARACTERISTICS

GLP vs. f

P1dB vs. f

f = 4.4GHz f = 4.7GHz f = 5.0GHz

Pout , PAE vs. Pin

Publication Date : Apr., 2011

2