MITSUBISHI MGFC45V6472A User Manual
m
< C band internally matched power GaAs FET >
MGFC45V6472A
6.4 – 7.2 GHz BAND / 32W
DESCRIPTION
The MGFC45V6472A is an internally impedance-matched
GaAs power FET especially designed for use in 6.4 – 7.2
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB=32W (TYP.) @f=6.4 – 7.2GHz
High power gain
GLP=8.0dB (TYP.) @f=6.4 – 7.2GHz
High power added efficiency
P.A.E.=28% (TYP.) @f=6.4 – 7.2GHz
Low distortion [item -51]
IM3=-45dBc (TYP.) @Po=34.5dBm S.C.L
APPLICATION
item 01 : 6.4 – 7.2 GHz band power amplifier
item 51 : 6.4 – 7.2 GHz band digital radio communication
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=8.0A RG=25ohm
OUTLINE
N
I
M
2
R1. 2
2
2
.
.
0
0
-
-
/
/
+
+
4
0
.
.
7
8
1
N
I
M
2
4
.
0
-
/
+
3
.
4
4
.
1
GF-38
24 +/- 0.3
(1)
20.4 +/- 0.2
16.7
0.6 +/- 0.15
(3)
(1) gate
(2) source(flange)
(3)drain
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO
VGSO Gate to source breakdown voltage -15 V
ID Drain current 25 A
IGR Reverse gate current -80 mA
IGF Forward gate current 168 mA
PT *1 Total power dissipation 150 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1 : Tc=25C
Gate to drain
breakdown voltage -15 V
Electrical characteristics
(Ta=25C)
Symbol Parameter Test conditions Limits Unit
IDSS
gm
VGS(off)
P1dB
GLP Linear Power Gain 7 8 - dB
P.A.E. Power added efficiency - 28 - %
IM3 *2 3rd order IM distortion -42 -45 - dBc
Rth(ch-c) *3
Saturated drain current VDS=3V,VGS=0V - 24
Transconductance VDS=3V,ID=6.4A - 8
Gate to source cut-off voltage VDS=3V,ID=120mA - - -5 V
Output power at 1dB gain compression
Thermal resistance
*2 :item -51 ,2 tone test,Po=34.5dBm Single Carrier Level ,f=7.2GHz,delta f=10MHz
*3 :Channel-case
VDS=10V,ID(RF off)=8.0A
f=6.4 – 7.2GHz
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Min. Typ. Max.
- A
- S
44.5 45 - dBm
- - 1 C/W
uni t : m
(2)
5
0
.
0
-
/
+
1
.
0
2
.
0
-
/
+
4
.
2
Publication Date : Apr., 2011
1
< C band internally matched power GaAs FET >
)
)
)
MGFC45V6472A
6.4 – 7.2 GHz BAND / 32W
MGFC45V6472A TYPICAL CHARACTERISTICS( Ta=25deg.C )
47
46
VDS=10(V)
IDS=8(A)
P1 dB ,GLP vs . f
P1dB
12
11
50
45
VDS=10(V)
IDS=8(A)
f=6.8(GHz)
Po , PA E vs. Pin
50
Po
40
45
10
40
30
44
OUTPUT POWER P1dB (dBm)
43
42
6.3 6.4 6.5 6.6 6.7 6.8 6.9 7.0 7.1 7.2 7.3
GLP
FREQUENCY f(G Hz)
9
8
LINEAR POWER GAIN GLP(dB
7
35
OUT PUT POWER Po(dB m )
30
25
20 25 30 35 40 45
IN PUTPO WER Pin ( d Bm)
PAE
20
10
0
POWER ADDED EFF I CI ECY PA E (% )
44
VDS=10(V)
IDS =8(A )
f=7.2(GHz)
40
Delta f=10(MHz)
36
Po,IM3 vs.Pin
Po
0
-10
-20
32
28
OUTPUT POWER Po (dBm S.C.L.
24
20
16
18 20 22 24 26 28 30 32 34 36
IM3
-30
-40
-50
IM3 (dBc
-60
-70
IN PUT POWER Pin (dBm S. C.L. )
MGFC45V6472A S-parameters
f S11 S21 S12 S22
(GHz) Magn. Angle(deg.) Magn. Angle(deg.)
6.4 0.66 100 2.39 -106
6.5 0.61 84 2.43 -122
6.6 0.56 70 2.47 -138
6.7 0.50 57 2.54 -154
6.8 0.43 42 2.59 -170
6.9 0.35 27 2.66 173
7.0 0.24 12 2.73 155
7.1 0.15 1 2.75 143
7.2 0.01 -10 2.72 123
( Ta=25deg.C , VDS=10(V),IDS=8.0(A) )
S Pa r a m e ters (TYP .)
Magn.
0.057
0.065
0.071
0.079
0.088
0.095
0.101
0.105
0.109
Angle(deg.)
-171
174
160
145
131
116
100
88
70
Magn.
0.32
0.34
0.35
0.35
0.34
0.31
0.27
0.24
0.20
Angle(deg.)
74
64
52
40
27
12
-8
-27
-61
Publication Date : Apr., 2011
2
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