Mitsubishi MGFC45V6472A Datasheet

.

Output power at 1dB gain

ELECTRIC

PRELIMINARY

(2) SOURCE(FIANGE)

Notice: This is not a final specification.
Some parametric limits are subject to change.

6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET

DESCRIPTION

The MGFC45V6472A is an internally impedance-matched
GaAs power FET especially designed for use in 6.4-7.2
GHz band amplifiers.The hermetically sealed metal-ceramic
package guarantees high reliability.

FEATURES

Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 32W (TYP.) @ f=6.4-7.2 GHz
High power gain
GLP = 8 dB (TYP.) @ f=6.4-7.2GHz
High power added efficiency
PAE = 28 % (TYP.) @ f=6.4-7.2GHz

Low distortion [item -51]
IM3=-42dBc(min.) @Po=34.5dBm S.C.L.

Thermal Resistance
Rth(ch-c)=1.0 deg.C/W(MAX.)

APPLICATION

item 01 : 6.4-7.2 GHz band power amplifier
item 51 : 6.4-7.2 GHz band digital ratio communication

QUALITY GRADE

IG

RECOMMENDED BIAS CONDITIONS

VDS = 10V
ID = 8.0 A
RG=25 ohm

27-March'98

MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGFC45V6472A

OUTLINE DRAWING Unit:millimeters (inches)

24 +/- 0.3

0.6 +/- 0.15

2MIN

R1.2

8.0 +/- 0.2

17.4 +/- 0.2

2MIN

4.3 +/- 0.4

1.4

GF-38

(1)

20.4 +/- 0.2

16.7

(3)

(1) GATE
(3) DRAIN

(2)

2.4 +/- 0.2

0.1 +/- 0.05

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Ratings Unit

VGDO Gate to drain voltage -15 V
VGSO Gate to source voltage -15 V

ID Drain current 30 A
IGR Reverse gate current -60 mA
IGF Forward gate current 126 mA

PT Total power dissipation 125 W

Tch Channel temperature 175 deg.C

Tstg Storage temperature -65/+175 deg.C

*1 : Tc=25 deg.C

ELECTRICAL CARACTERISTICS

Symbol Parameter Test conditions

IDSS Saturated drain current VDS=3V, VGS=0V - 20 - A

Gm Transconductance VDS=3V, ID=6.4A - 8.0 - V

VGS(off)

P1dB

GLP Linear power gain VDS=10V, ID(RF off)=8.0A, f=6.4-7.2GHz 7 8 - dB

PAE Power added efficiency - 35 - %

IM3 3rd order IM distortion *1 -42 -45 - dBc

Rth(ch-c) Thermal resistance *2 Delta Vf method - - 1.0 deg.C/W

*1 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=7.2GHz,Delta f=10MHz *2 : Channel-case

Gate to source cut-off voltage

(Ta=25 deg.C)

(Ta=25 deg.C)

Limits Unit

Min. Typ. Max.

VDS = 3V , ID = 120mA - - -5 V

44.5 45 - dBm

MITSUBISHI

MGFC45V6472A

TYPICAL CHARACTERISTICS (Ta=25deg.C)

PRELIMINARY

OUTPUT POWER P1dB (dBm)

LINEAR POWER GAIN GLP(dB)

POWER ADDED EFFICIECY PAE (%)

OUTPUT POWER Po (dBm S.C.L.)

IM3 (dBc)

Notice: This is not a final specification.
Some parametric limits are subject to change.

27-March'98

MITSUBISHI SEMICONDUCTOR <GaAs FET>

6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET

P1dB ,GLP vs. f

47

VDS=10(V)
IDS=8(A)

46

45

44

43

42

6.3 6.4 6.5 6.6 6.7 6.8 6.9 7.0 7.1 7.2 7.3

44

VDS=10(V)
IDS=8(A)
f=7.2(GHz)

40

Delta f=10(MHz)

36

P1dB

GLP

FREQUENCY f(GHz)

Po,IM3 vs.Pin

Po

0

-10

-20

Po , PAE vs. Pin

12

11

10

9

8

7

50

VDS=10(V)
IDS=8(A)
f=6.8(GHz)

45

40

35

OUTPUT POWER Po(dBm)

30

25

20 25 30 35 40 45

INPUTPOWER Pin(dBm)

Po

PAE

50

40

30

20

10

0

32

28

IM3

24

20

16

18 20 22 24 26 28 30 32 34 36

INPUT POWER Pin (dBm S.C.L.)

-30

-40

-50

-60

-70

S PARAMETERS (Ta=25deg.C,VDS=10V,ID=8.0A)

S Parameters (TYP.)

f S11 S21 S12 S22

(GHz) Magn. Angle(deg.) Magn. Angle(deg.)

6.4 0.66 100 2.39 -106

6.5 0.61 84 2.43 -122

6.6 0.56 70 2.47 -138

6.7 0.50 57 2.54 -154

6.8 0.43 42 2.59 -170

6.9 0.35 27 2.66 173

7.0 0.24 12 2.73 155

7.1 0.15 1 2.75 143

7.2 0.01 -10 2.72 123

Magn.

0.057

0.065

0.071

0.079

0.088

0.095

0.101

0.105

0.109

Angle(deg.)

-171
174
160
145
131
116
100

88
70

Magn.

0.32

0.34

0.35

0.35

0.34

0.31

0.27

0.24

0.20

Angle(deg.)

74
64
52
40
27
12

-8

-27

-61

MITSUBISHI