MITSUBISHI MGFC45V5964A User Manual

Output power at 1dB gain

compression

查询MGFC45V5964A供应商

PRELIMINARY

Notice : This is not a final specification.
Some parametric limits are subject to change.

5.9 - 6.4GHz BAND 32W INTERNALLY MATCHED GaAs FET

DESCRIPTION

The MGFC45V5964A is an internally impedance matched
GaAs power FET especially designed for use in 5.9 - 6.4
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.

FEATURES

Internally matched to 50 ohm system
High output power
P1dB = 32W (TYP.) @ f=5.9 - 6.4 GHz
High power gain
GLP =9.0 dB (TYP.) @ f=5.9 - 6.4 GHz
High power added efficiency
P.A.E. = 33 % (TYP.) @ f=5.9 - 6.4 GHz
Low Distortion[Item-51]
IM3=-42 dBc(MIN.)@Po=34.5dBm S.C.L.

APPLICATION

5.9 - 6.4 GHz band amplifiers

QUALITY GRADE

IG

RECOMMENDED BIAS CONDITIONS

VDS = 10V
ID = 8 A
Rg=25 ohm Refer to Bias Procedure

ABSOLUTE MAXIMUM RATINGS

27-March'98

MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGFC45V5964A

OUTLINE DRAWING Unit:millimeters (inches)

24 +/- 0.3

0.6 +/- 0.15

2MIN

R1.2

8.0 +/- 0.2

17.4 +/- 0.2

2MIN

4.3 +/- 0.4

1.4

GF-38

(1)

20.4 +/- 0.2

16.7

(3)

(1) GATE
(2) SOURCE(FIANGE)
(3) DRAIN

(2)

2.4 +/- 0.2

0.1 +/- 0.05

Symbol Parameter Ratings Unit

VGDO Gate to drain voltage -15 V
VGSO Gate to source voltage -15 V

ID Drain current 30 A
IGR Reverse gate current -60 mA
IGF Forward gate current 126 mA

PT Total power dissipation 125 W

Tch Channel temperature 175 deg.C

Tstg Storage temperature -65/+175 deg.C

*1 : Tc=25 Deg.C

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Test conditions

IDSS Saturated drain current VDS = 3V , VGS = 0V - 24 - A

Gm Transconductance VDS = 3V , ID = 8A - 8 - S

VGS(off) Gate to source cut-off voltage VDS = 3V , ID = 160mA - - -5 V

P1dB

GLP Linear power gain VDS = 10V , ID = 8A , f = 5.9 - 6.4 GHz 8 9 - dB

PAE Power added efficiency - 33 - %

44.5 45 - dBm

Limits

Min Typ Max

Unit

IM3 3rd order IM distortion -42 -45 - dBc

Rth(ch-c) Thermal resistance *1 Delta Vf method - ‑ 1.0 Deg.C/W
*1 : Channel to case

*2 : Item-51,2tone test,Po=34.5dBm Single Carrier Level,f=6.4GHz, Delta f=10MHz

MITSUBISHI
ELECTRIC

27-March'98

5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET

11S21S12S22

PRELIMINARY

LINEAR POWER GAIN GLP(dB)

OUTPUT POWER Po (dBm S.C.L.)

OUTPUT POWER Po(dBm)

Notice : This is not a final specification.
Some parametric limits are subject to change.

TYPICAL CHARACTERISTICS (Ta=25 Deg.C)

MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGFC45V5964A

P1dB ,GLP vs. f

47

VDS=10(V)
IDS=8(A)

P1dB

46

45

44

OUTPUT POWER P1dB (dBm)

43

GLP

42

41

5.8 5.9 6.0 6.1 6.2 6.3 6.4 6.5

FERQUENCY (GHz)

Po IM3 vs. Pin

44

VDS=10(V)

42

IDS=8(A)
f=6.4(GHz)

40

Delta f=10(MHz)

38

Po

36
34
32
30
28
26

IM3

24
22
20

18 20 22 24 26 28 30 32 34 36

INPUT POWER Pin(dBm S.C.L.)

14

13

12

11

10

9

8

0

-10

-20

-30

-40

-50

-60

IM3(dBc)

Po , PAE vs. Pin

50

VDS=10(V)
IDS=8(A)
f=6.15(GHz)

45

40

35

30

25

20 25 30 35 40 45

INPUTPOWER Pin(dBm)

Po

PAE

50

40

30

20

10

POWER ADDED EFFICIECY PAE (%)

0

S PARAMETERS (Ta=25 Deg.C , V

=10V , IDS=8A)

DS

S Parameters (TYP.)

f

S

(GHz) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.)

5.90 0.61 159 2.957 -44 0.04 -117 0.21 160

6.00 0.55 138 3.071 -62 0.05 -134 0.22 134

6.10 0.48 115 3.119 -81 0.06 -152 0.25 112

6.20 0.41 92 3.148 -100 0.07 -167 0.26 91

6.30 0.34 65 3.143 -118 0.08 175 0.26 73

6.40 0.28 36 3.122 -137 0.09 160 0.25 55

MITSUBISHI
ELECTRIC