Mitsubishi MGFC45V5964A Datasheet
MITSUBISHI SEMICONDUCTOR <GaAs FET>
Output power at 1dB gain
compression
MGFC45V5964A
5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
DESCRIPTION
The MGFC45V5964A is an internally impedance matched
GaAs power FET especially designed for use in 5.9~6.4
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES (TARGET)
Internally matched to 50 (Ω) system
High output power
P1dB=32W (TYP.) @f=5.9~6.4GHz
High power gain
GLP=9.0dB (TYP.) @f=5.9~6.4GHz
High power added efficiency
P.A.E.=33% (TYP.) @f=5.9~6.4GHz
Low distortion [item -51]
IM3= -42dBc (MIN.) @Po=34.5dBm S.C.L.
APPLICATION
5.9~6.4GHz band amplifiers
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V
ID=8A
Rg=25Ω Refer to Bias Procedure
ABSOLUTE MAXIMUM RATINGS
Symbol
VGDO
VGSO
ID
IGR Reverse gate current
IGF
PT
Tch
Tstg
*1 : Tc=25°C
Gate to drain voltage -15 V
Forward gate current 168 mA
Total power dissipation
Channel temperature
Storage temperature
Parameter Ratings Unit
-15Gate to source voltage
20Drain current
-80
*1
150 W
175
-65 ~ +175 °C
V
A
mA
°C
OUTLINE DRAWING
24±0.3 (0.945±0.012)
R1.2
20.4±0.2 (0.803±0.008)
GF-38
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (i)placement of
substitutive, auxiliary circuits, (ii)use of non-flammable
material or (iii)prevention against any malfunction or mishap.
Until : millimeters (inches)
(0.024±0.006)
0.6±0.15
16.7 (0.658)
(1) GATE
(2) Source (FLANGE)
(3) DRAIN
ELECTRICAL CHARACTERISTICS
Symbol Parameter
VGS (off)
P1dB
GLP
P.A.E.
IM3 *2
Rth (ch-c) Thermal resistance 0.8 °C/W
*1 : Channel to case
*2 : Item-51,2tone test, Po=34.5dBm Single Carrier Level, f=6.4GHz, ∆ f=10MHz
—
44
9
—
-42
—
Limits
24—
45 dBm
9.5 dB
-45
Test conditions
Saturated drain currentIDSS
TransconductanceGm
Gate to Source cut-off voltage
Linear power gain VDS=10V, ID=8A, f=5.9~6.4GHz
Power added efficiency 34
3rd order IM distortion
VDS=3V, IGS=0V V
VDS=3V, ID=8V
VDS=3V, ID=160mA
∆Vf method
*1
Min. Typ. Max
MITSUBISHI
ELECTRIC
Unit
—
8 S
—
—
—
—
—
1.0
dBc
V-5—-2
%
Loading...