Mitsubishi MGFC45V5964A Datasheet

MITSUBISHI SEMICONDUCTOR <GaAs FET>
Output power at 1dB gain
compression
MGFC45V5964A
5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
DESCRIPTION
The MGFC45V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9~6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES (TARGET)
Internally matched to 50 () system High output power
P1dB=32W (TYP.) @f=5.9~6.4GHz
High power gain
GLP=9.0dB (TYP.) @f=5.9~6.4GHz
High power added efficiency
P.A.E.=33% (TYP.) @f=5.9~6.4GHz
Low distortion [item -51]
IM3= -42dBc (MIN.) @Po=34.5dBm S.C.L.
APPLICATION
5.9~6.4GHz band amplifiers
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=8A Rg=25 Refer to Bias Procedure
Symbol
VGDO VGSO ID IGR Reverse gate current IGF PT Tch Tstg
*1 : Tc=25°C
Gate to drain voltage -15 V
Forward gate current 168 mA Total power dissipation Channel temperature Storage temperature
Parameter Ratings Unit
-15Gate to source voltage 20Drain current
-80
*1
150 W 175
-65 ~ +175 °C
V A
mA
°C
OUTLINE DRAWING
24±0.3 (0.945±0.012)
R1.2
20.4±0.2 (0.803±0.008)
GF-38
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Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
Until : millimeters (inches)
(0.024±0.006)
0.6±0.15
16.7 (0.658)
(1) GATE (2) Source (FLANGE) (3) DRAIN
ELECTRICAL CHARACTERISTICS
Symbol Parameter
VGS (off) P1dB GLP
P.A.E. IM3 *2 Rth (ch-c) Thermal resistance 0.8 °C/W
*1 : Channel to case *2 : Item-51,2tone test, Po=34.5dBm Single Carrier Level, f=6.4GHz, f=10MHz
44
9
-42 —
Limits
24
45 dBm
9.5 dB
-45
Test conditions
Saturated drain currentIDSS TransconductanceGm Gate to Source cut-off voltage
Linear power gain VDS=10V, ID=8A, f=5.9~6.4GHz Power added efficiency 34
3rd order IM distortion
VDS=3V, IGS=0V V VDS=3V, ID=8V VDS=3V, ID=160mA
Vf method
*1
Min. Typ. Max
MITSUBISHI ELECTRIC
Unit
8 S
— —
— —
1.0
dBc
V-5-2
%
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