MITSUBISHI MGFC45V4450A User Manual

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< C band internally matched power GaAs FET >

MGFC45V4450A

4.4 – 5.0 GHz BAND / 32W

DESCRIPTION

The MGFC45V4450A is an internally impedance-matched
GaAs power FET especially designed for use in 4.4 – 5.0
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.

FEATURES

Class A operation
Internally matched to 50(ohm) system
 High output power
P1dB=32W (TYP.) @f=4.4 – 5.0GHz
 High power gain
GLP=10.0dB (TYP.) @f=4.4 – 5.0GHz
 High power added efficiency
P.A.E.=34% (TYP.) @f=4.4 – 5.0GHz
 Low distortion [item -51]
IM3=-45dBc (TYP.) @Po=34.5dBm S.C.L

APPLICATION

 item 01 : 4.4 – 5.0 GHz band power amplifier
 item 51 : 4.4 – 5.0 GHz band digital radio communication

QUALITY

 IG

RECOMMENDED BIAS CONDITIONS

 VDS=10V  ID=8.0A  RG=25ohm

OUTLINE

N

I
M

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R1. 2

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7

8

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I
M

2

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GF-38

24 +/- 0.3

(1)

20.4 +/- 0.2

16.7

0.6 +/- 0.15

(3)

(1) gate
(2) source(flange)
(3)drain

Absolute maximum ratings (Ta=25C)

Symbol Parameter Ratings Unit

VGDO
VGSO Gate to source breakdown voltage -15 V
ID Drain current 20 A
IGR Reverse gate current -80 mA
IGF Forward gate current 168 mA
PT *1 Total power dissipation 150 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C

*1 : Tc=25C

Gate to drain

breakdown voltage -15 V

Electrical characteristics

(Ta=25C)

Symbol Parameter Test conditions Limits Unit

IDSS
gm

VGS(off)
P1dB
GLP Linear Power Gain 9 10 - dB

ID Drain current - 8 - A

P.A.E. Power added efficiency - 34 - %
IM3 *2 3rd order IM distortion

Rth(ch-c) *3

Saturated drain current VDS=3V,VGS=0V - 24
Transconductance VDS=3V,ID=8.0A - 8
Gate to source cut-off voltage VDS=3V,ID=160mA -2 - -5 V

Output power at 1dB gain compression

Thermal resistance delta Vf method - 0.8 1

*2 :item -51 ,2 tone test,Po=34.5dBm Single Carrier Level ,f=4.4,4.7,5.0GHz,delta f=10MHz
*3 :Channel-case

VDS=10V,ID(RF off)=8.0A
f=4.4 – 5.0GHz

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.

Min. Typ. Max.

- A

- S

44 45 - dBm

-42 -45 - dBc

(2)

C/W



uni t : m

5

2

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0

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0

0

-

/

-

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+

+

4

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2

0

Publication Date : Apr., 2011

1

< C band internally matched power GaAs FET >

MGFC45V4450A

4.4 – 5.0 GHz BAND / 32W

MGFC45V4450A TYPICAL CHARACTERISTICS( Ta=25deg.C )

P1dB,GLP vs. f Po,PAE vs. Pin

Po,IM3 vs. Pin

MGFC45V4450A S-parameters( Ta=25deg.C , VDS=10(V),IDS=8.0(A) )

f

(GHz)

4.4 0.58 -132 2.881 54 0.04 2 0.30 -56

4.5 0.59 -163 2.936 31 0.04 -21 0.23 -82

4.6 0.58 171 2.865 8 0.05 -52 0.16 -125

4.7 0.59 151 2.782 -12 0.05 -67 0.18 -170

4.8 0.56 134 2.670 -32 0.05 -94 0.24 160

4.9 0.54 120 2.628 -51 0.05 -112 0.32 138

5.0 0.50 111 2.528 -70 0.06 -129 0.38 125

Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.)

S11 S21 S12 S22

S Parameters(Typ.)

Publication Date : Apr., 2011

2