Mitsubishi MGFC45V3642A Datasheet

PRELIMINARY

Notice: This is not a final specification.
Some parametric limits are subject to change.

DESCRIPTION

The MGFC45V3642A is an internally impedance-matched

GaAs power FET especially designed for use in 3.6 - 4.2

GHz band amplifiers. The hermetically sealed metal-ceramic

package guarantees high reliability.

FEATURES

Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 32W (TYP.) @ f=3.6 - 4.2 GHz
High power gain
GLP = 11 dB (TYP.) @ f=3.6 - 4.2GHz
High power added efficiency
P.A.E. = 36 % (TYP.) @ f=3.6 - 4.2GHz

Low distortion [item -51]

IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.

APPLICATION

item 01 : 3.6 - 4.2 GHz band power amplifier

item 51 : 3.6 - 4.2 GHz band digital ratio communication

QUALITY GRADE

IG

RECOMMENDED BIAS CONDITIONS

VDS = 10 (V)
ID = 8 (A)
RG=25 (ohm)

MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGFC45V3642A

3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET

OUTLINE

2
N

2

.
I

.

0
M

0

2

-

-

R1.2

/

/

+

+

4

0

.

.

7

8

1

N
I
M
2

4
.
0

­/
+

3
.

4

4

.
1

GF-38

24 +/- 0.3

(1)

20.4 +/- 0.2

16.7

0.6 +/- 0.15

(3)

(1) gate
(2) source(flange)
(3)drain

unit : mm

(2)

5
0
.
0

­/
+

1
.
0

2
.
0

­/
+

4
.
2

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Ratings Unit

VGDO Gate to drain voltage -15 V

VGSO Gate to source voltage -15 V

ID Drain current 20 A

IGR Reverse gate current -80 mA

IGF Forward gate current 168 mA

PT *1 Total power dissipation 150 W

Tch Channel temperature 175 deg.C

Tstg Storage temperature -65 / +175 deg.C

*1 : Tc=25deg.C

ELECTRICAL CHARACTERISTICS

Symbol Parameter Test conditions

IDSS

gm

VGS(off)

P1dB

GLP

ID

P.A.E.

IM3 *2

Rth(ch-c) *3

*2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=3.6,3.9,4.2GHz,delta f=10MHz
*3 : Channel-case

Saturated drain current

Transconductance

Gate to source cut-off voltage

Output power at 1dB gain
compression

Linear power gain

Drain current

Power added efficiency

3rd order IM distortion

Thermal resistance

VDS = 3V , VGS = 0V - 24 - A

VDS = 3V , ID = 8A - 8 - S

VDS = 3V , ID = 160mA -2 - -5 V

delta Vf method - 0.8 1

(Ta=25deg.C)

(Ta=25deg.C)

VDS=10V, ID(RF off)=8A, f=3.6 - 4.2GHz 10 11 - dB

< Keep safety first in your circuit designs! >

Mitsubishi Electric Corporation puts the maximum effort into

making semiconductor products better and more reliable,

but there is always the possibility that trouble may occur

with them. Trouble with semiconductors may lead to personal

injury, fire or property damage. Remember to give due

consideration to safety when making your circuit designs,

with appropriate measures such as (1)placement of

substitutive, auxiliary circuits, (2)use of non-flammable

material or (3)prevention against any malfunction or mishap.

Min. Typ. Max.

44 45 - dBm

-8-A

-36- %

-42 -45 - dBc

MITSUBISHI

ELECTRIC

Limits Unit

deg.C/W

Feb.'99

PRELIMINARY

Notice: This is not a final specification.
Some parametric limits are subject to change.

TYPICAL CHARACTERISTICS

47

VDS=10V
IDS=8A

46

45

44

43

OUTPUT POWER P1dB (dBm)

42

41

3.5 3.6 3.7 3.8 3.9 4 4.1 4.2 4.3

FREQUENCY f (GHz)

40

VDS=10V
IDS=8A
f1=4.20GHz

38

f2=4.21GHz
2-tone test

36

P1dB,GLP vs. f

P1dB

GLP

Po,IM3 vs. Pin

Po

3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET

22

20

18

16

14

12

LINEAR POWER GAIN GLP (dB)

10

10

0

-10

50

45

40

35

OUTPUT POWER Po (dBm)

30

25

20 25 30 35 40

MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGFC45V3642A

Po, P.A.E. vs. Pin

VDS=10V
IDS=8A
f=3.9GHz

Po

add

INPUT POWER Pin (dBm)

100

80

60

40

20

POWER ADDED EFFICIENCY (%)

0

34

32

30

IM3

-20

-30

-40

IM3 (dBc)

OUTPUT POWER Po (dBm S.C.L.)

28

26

17 19 21 23 25 27 29 31

INPUT POWER Pin (dBm S.C.L.)

S parameters

f S11 S21 S12 S22

(GHz) Magn. Angle(deg) Magn. Angle(deg) Magn. Angle(deg) Magn. Angle(deg)

3.50

3.60

3.70

3.80

3.90

4.00

4.10

4.20

4.30

0.51 165 3.71 42 0.05 -21 0.39 -29

0.55 125 3.82 14 0.06 -52 0.29 -56

0.56 93 3.84 -15 0.07 -80 0.22 -94

0.54 67 3.81 -41 0.07 -107 0.21 -142

0.47 40 3.86 -68 0.08 -134 0.23 -177

0.37 5 3.87 -97 0.09 -162 0.26 149

0.27 -42 3.83 -125 0.09 169 0.26 122

0.26 -117 3.64 -156 0.09 141 0.21 93

0.40 -174 3.25 174 0.09 108 0.09 63

( Ta=25deg.C , VDS=10(V),IDS=8(A) )

-50

-60

S-Parameter (TYP.)

MITSUBISHI

ELECTRIC

Feb.'99