MITSUBISHI MGFC45V3436A User Manual

m

< C band internally matched power GaAs FET >

MGFC45V3436A

3.4 – 3.6 GHz BAND / 32W

DESCRIPTION

The MGFC45V3436A is an internally impedance-matched
GaAs power FET especially designed for use in 3.4 – 3.6
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.

FEATURES

Class A operation
Internally matched to 50(ohm) system
 High output power
P1dB=32W (TYP.) @f=3.4 – 3.6GHz
 High power gain
GLP=12.0dB (TYP.) @f=3.4 – 3.6GHz
 High power added efficiency
P.A.E.=36% (TYP.) @f=3.4 – 3.6GHz
 Low distortion [item -51]
IM3=-45dBc (TYP.) @Po=34.5dBm S.C.L

APPLICATION

 item 01 : 3.4 – 3.6 GHz band power amplifier
 item 51 : 3.4 – 3.6 GHz band digital radio communication

QUALITY

 IG

RECOMMENDED BIAS CONDITIONS

 VDS=10V  ID=8A  RG=25ohm

OUTLINE

N

I
M

2

R1. 2

2

2

.

.

0

0

-

-

/

/

+

+

4

0

.

.

7

8

1

N

I
M

2

4

.

0

-

/

+
3

.

4

4

.

1

GF-38

24 +/- 0.3

(1)

20.4 +/- 0.2

16.7

0.6 +/- 0.15

(3)

(1) gate
(2) source(flange)
(3)drain

Absolute maximum ratings (Ta=25C)

Symbol Parameter Ratings Unit

VGDO
VGSO Gate to source breakdown voltage -15 V
ID Drain current 25 A
IGR Reverse gate current -80 mA
IGF Forward gate current 168 mA
PT *1 Total power dissipation 150 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C

*1 : Tc=25C

Gate to drain

breakdown voltage -15 V

Electrical characteristics

(Ta=25C)

Symbol Parameter Test conditions Limits Unit

IDSS
gm

VGS(off)
P1dB
GLP Linear Power Gain 11 12 - dB

ID Drain current - 8 - A

P.A.E. Power added efficiency - 36 - %
IM3 *2 3rd order IM distortion

Rth(ch-c) *3

Saturated drain current VDS=3V,VGS=0V - 24
Transconductance VDS=3V,ID=8A - 8
Gate to source cut-off voltage VDS=3V,ID=160mA -2 - -5 V

Output power at 1dB gain compression

Thermal resistance delta Vf method - 0.8 1

*2 :item -51 ,2 tone test,Po=34.5dBm Single Carrier Level ,f=3.4,3.5,3.6GHz,delta f=10MHz
*3 :Channel-case

VDS=10V,ID(RF off)=8A
f=3.4 – 3.6GHz

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.

Min. Typ. Max.

- A

- S

44 45 - dBm

-42 -45 - dBc

(2)

C/W



uni t : m

5

2

.

0

.

0

0

-

/

-

/

+

+

4

.

1

.

2

0

Publication Date : Apr., 2011

1

< C band internally matched power GaAs FET >

L

MGFC45V3436A

3.4 – 3.6 GHz BAND / 32W

MGFC45V3436A TYPICAL CHARACTERISTICS( Ta=25deg.C )

47

46

45

VDS=10V
IDS=8.0A

44

43

42

OUTPUT POWER P1dB (dBm)

41

40

3.3 3.4 3.5 3.6 3.7

42

40

38

36

VDS=10V
IDS=8A
f1=3.600GHz
f2=3.605GHz
2-tone test

34

32

30

OUTPUT POWER Po (dBm S.C.

28

26

P1 dB , G L P v s. f

P1dB

GLP

FREQUENCY f (GHz)

Po,IM3 vs. f

Po

IM3

16

15

14

13

12

11

10

9

20

10

0

-10

-20

-30

-40

-50

-60

46

VDS= 10V

44

IDS=8A
f=3.5GHz

42
40
38
36
34
32

LINEAR POWER GAIN GLP (dB)

OUTPU T PO W ER Po (dBm)

30
28
26

17 19 21 23 25 27 29 31 33 35 37

IM3 (dBc

24

16 18 20 22 24 26 28 30

INPUT POWER Pin (dBm S.C.L.)

-70

MGFC45V3436A S-parameters( Ta=25deg.C , VDS=10(V),IDS=8.0(A) )

f

(GHz)

3.30 0.54 -95 3.01 104 0.03 43 0.60 13

3.35 0.51 -121 3.27 87 0.03 29 0.56 3

3.40 0.49 -146 3.45 73 0.04 13 0.50 -6

3.45 0.50 -171 3.58 59 0.04 -12 0.44 -17

3.50 0.51 165 3.71 42 0.05 -21 0.39 -29

3.55 0.53 144 3.80 27 0.06 -37 0.34 -42

3.60 0.55 125 3.82 14 0.06 -52 0.29 -56

3.65 0.56 110 3.81 -1 0.06 -69 0.24 -74

3.70 0.56 93 3.84 -15 0.07 -80 0.22 -94

Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.)

S11 S21 S12 S22

S Parameters(Typ.)

Po, P.A.E. vs. Pin

Po

INPUT POWER Pin (dBm)

P.A.E.

100

80

60

40

20

0

POW ER ADDE D E FFICI ENC Y ( % )

Publication Date : Apr., 2011

2

< C band internally matched power GaAs FET >

MGFC45V3436A

3.4 – 3.6 GHz BAND / 32W

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor product s better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.

•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
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Keep safety first in your circuit designs!

Notes regarding these materials

© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.

Publication Date : Apr., 2011

3