MITSUBISHI MGFC45V3436A User Manual
m
< C band internally matched power GaAs FET >
MGFC45V3436A
3.4 – 3.6 GHz BAND / 32W
DESCRIPTION
The MGFC45V3436A is an internally impedance-matched
GaAs power FET especially designed for use in 3.4 – 3.6
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB=32W (TYP.) @f=3.4 – 3.6GHz
High power gain
GLP=12.0dB (TYP.) @f=3.4 – 3.6GHz
High power added efficiency
P.A.E.=36% (TYP.) @f=3.4 – 3.6GHz
Low distortion [item -51]
IM3=-45dBc (TYP.) @Po=34.5dBm S.C.L
APPLICATION
item 01 : 3.4 – 3.6 GHz band power amplifier
item 51 : 3.4 – 3.6 GHz band digital radio communication
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=8A RG=25ohm
OUTLINE
N
I
M
2
R1. 2
2
2
.
.
0
0
-
-
/
/
+
+
4
0
.
.
7
8
1
N
I
M
2
4
.
0
-
/
+
3
.
4
4
.
1
GF-38
24 +/- 0.3
(1)
20.4 +/- 0.2
16.7
0.6 +/- 0.15
(3)
(1) gate
(2) source(flange)
(3)drain
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO
VGSO Gate to source breakdown voltage -15 V
ID Drain current 25 A
IGR Reverse gate current -80 mA
IGF Forward gate current 168 mA
PT *1 Total power dissipation 150 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1 : Tc=25C
Gate to drain
breakdown voltage -15 V
Electrical characteristics
(Ta=25C)
Symbol Parameter Test conditions Limits Unit
IDSS
gm
VGS(off)
P1dB
GLP Linear Power Gain 11 12 - dB
ID Drain current - 8 - A
P.A.E. Power added efficiency - 36 - %
IM3 *2 3rd order IM distortion
Rth(ch-c) *3
Saturated drain current VDS=3V,VGS=0V - 24
Transconductance VDS=3V,ID=8A - 8
Gate to source cut-off voltage VDS=3V,ID=160mA -2 - -5 V
Output power at 1dB gain compression
Thermal resistance delta Vf method - 0.8 1
*2 :item -51 ,2 tone test,Po=34.5dBm Single Carrier Level ,f=3.4,3.5,3.6GHz,delta f=10MHz
*3 :Channel-case
VDS=10V,ID(RF off)=8A
f=3.4 – 3.6GHz
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Min. Typ. Max.
- A
- S
44 45 - dBm
-42 -45 - dBc
(2)
C/W
uni t : m
5
2
.
0
.
0
0
-
/
-
/
+
+
4
.
1
.
2
0
Publication Date : Apr., 2011
1
< C band internally matched power GaAs FET >
L
MGFC45V3436A
3.4 – 3.6 GHz BAND / 32W
MGFC45V3436A TYPICAL CHARACTERISTICS( Ta=25deg.C )
47
46
45
VDS=10V
IDS=8.0A
44
43
42
OUTPUT POWER P1dB (dBm)
41
40
3.3 3.4 3.5 3.6 3.7
42
40
38
36
VDS=10V
IDS=8A
f1=3.600GHz
f2=3.605GHz
2-tone test
34
32
30
OUTPUT POWER Po (dBm S.C.
28
26
P1 dB , G L P v s. f
P1dB
GLP
FREQUENCY f (GHz)
Po,IM3 vs. f
Po
IM3
16
15
14
13
12
11
10
9
20
10
0
-10
-20
-30
-40
-50
-60
46
VDS= 10V
44
IDS=8A
f=3.5GHz
42
40
38
36
34
32
LINEAR POWER GAIN GLP (dB)
OUTPU T PO W ER Po (dBm)
30
28
26
17 19 21 23 25 27 29 31 33 35 37
IM3 (dBc
24
16 18 20 22 24 26 28 30
INPUT POWER Pin (dBm S.C.L.)
-70
MGFC45V3436A S-parameters( Ta=25deg.C , VDS=10(V),IDS=8.0(A) )
f
(GHz)
3.30 0.54 -95 3.01 104 0.03 43 0.60 13
3.35 0.51 -121 3.27 87 0.03 29 0.56 3
3.40 0.49 -146 3.45 73 0.04 13 0.50 -6
3.45 0.50 -171 3.58 59 0.04 -12 0.44 -17
3.50 0.51 165 3.71 42 0.05 -21 0.39 -29
3.55 0.53 144 3.80 27 0.06 -37 0.34 -42
3.60 0.55 125 3.82 14 0.06 -52 0.29 -56
3.65 0.56 110 3.81 -1 0.06 -69 0.24 -74
3.70 0.56 93 3.84 -15 0.07 -80 0.22 -94
Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.)
S11 S21 S12 S22
S Parameters(Typ.)
Po, P.A.E. vs. Pin
Po
INPUT POWER Pin (dBm)
P.A.E.
100
80
60
40
20
0
POW ER ADDE D E FFICI ENC Y ( % )
Publication Date : Apr., 2011
2
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