< C band internally matched power GaAs FET >
MGFC45B3436B
3.4 – 3.6 GHz BAND / 30W
DESCRIPTION
The MGFC45B3436B is an internally impedance-matched
GaAs power FET especially designed for use in 3.4 – 3.6
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class AB operation
Internally matched to 50(ohm) system
High output power
Po(SAT)=30W (TYP.) @f=3.4 – 3.6GHz
High power gain
GLP=11.0dB (TYP.) @f=3.4 – 3.6GHz
Distortion
ACP=-45dBc (TYP.) @f=3.4 – 3.6GHz
RECOMMENDED BIAS CONDITIONS
VDS=12V ID=0.8A RG=12ohm
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO
VGSO Gate to source breakdown voltage -10 V
MAXID Maximum drain current 10 A
PT *1 Total power dissipation 78 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1 : Tc=25C
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
VGS(off)
Po(SAT) Output Power
GLP Linear Power Gain 10 11 - dB
ID Drain current - 1.2 1.5 A
ACP *2 Adjacent Channel leakage Power
Rth(ch-c) *3
*2 :Mod.3GPP TEST MODEL 1 64code Signal
*3 :Channel-case
Gate to drain
Gate to source cut-off voltage VDS=3V,ID=100mA -0.5 - -3.0 V
Thermal resistance delta Vf method - - 1.9
breakdown voltage -15 V
(Ta=25C)
VDS=12V,ID(RF off)=0.8A
f=3.4 - 3.6GHz
VDS=12V,ID(RF off)=0.8A
f=3.4 - 3.6GHz ,Pout=34dBm
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Min. Typ. Max.
- 45 - dBm
- -45 - dBc
C/W
Publication Date : Apr., 2011
1
< C band internally matched power GaAs FET >
MGFC45B3436B
3.4 – 3.6 GHz BAND / 30W
MGFC45B3436B TYPICAL CHARACTERISTICS
Publication Date : Apr., 2011
2
< C band internally matched power GaAs FET >
MGFC45B3436B
3.4 – 3.6 GHz BAND / 30W
MGFC45B3436B S-parameters( Ta=25deg.C , VDS=12(V),IDS=0.8(A) )
Publication Date : Apr., 2011
3
< C band internally matched power GaAs FET >
MGFC45B3436B
3.4 – 3.6 GHz BAND / 30W
MGFC45B3436B S-parameters( Ta=25deg.C , VDS=12(V),IDS=0.8(A) )
Publication Date : Apr., 2011
4
< C band internally matched power GaAs FET >
MGFC45B3436B
3.4 – 3.6 GHz BAND / 30W
MGFC45B3436B RF TEST FIXTURE
Publication Date : Apr., 2011
5
< C band internally matched power GaAs FET >
MGFC45B3436B
3.4 – 3.6 GHz BAND / 30W
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor product s better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
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Keep safety first in your circuit designs!
Notes regarding these materials
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Apr., 2011
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