MITSUBISHI MGFC45B3436B User Manual
< C band internally matched power GaAs FET >
MGFC45B3436B
3.4 – 3.6 GHz BAND / 30W
DESCRIPTION
The MGFC45B3436B is an internally impedance-matched
GaAs power FET especially designed for use in 3.4 – 3.6
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class AB operation
Internally matched to 50(ohm) system
High output power
Po(SAT)=30W (TYP.) @f=3.4 – 3.6GHz
High power gain
GLP=11.0dB (TYP.) @f=3.4 – 3.6GHz
Distortion
ACP=-45dBc (TYP.) @f=3.4 – 3.6GHz
RECOMMENDED BIAS CONDITIONS
VDS=12V ID=0.8A RG=12ohm
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO
VGSO Gate to source breakdown voltage -10 V
MAXID Maximum drain current 10 A
PT *1 Total power dissipation 78 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1 : Tc=25C
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
VGS(off)
Po(SAT) Output Power
GLP Linear Power Gain 10 11 - dB
ID Drain current - 1.2 1.5 A
ACP *2 Adjacent Channel leakage Power
Rth(ch-c) *3
*2 :Mod.3GPP TEST MODEL 1 64code Signal
*3 :Channel-case
Gate to drain
Gate to source cut-off voltage VDS=3V,ID=100mA -0.5 - -3.0 V
Thermal resistance delta Vf method - - 1.9
breakdown voltage -15 V
(Ta=25C)
VDS=12V,ID(RF off)=0.8A
f=3.4 - 3.6GHz
VDS=12V,ID(RF off)=0.8A
f=3.4 - 3.6GHz ,Pout=34dBm
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Min. Typ. Max.
- 45 - dBm
- -45 - dBc
C/W
Publication Date : Apr., 2011
1
< C band internally matched power GaAs FET >
MGFC45B3436B
3.4 – 3.6 GHz BAND / 30W
MGFC45B3436B TYPICAL CHARACTERISTICS
Publication Date : Apr., 2011
2
Loading...